High field-effect mobility amorphous InSnZnO thin-film transistors with low carrier concentration and oxygen vacancy

K. Jang; J. Raja; J. Kim; Y. Lee; D. Kim; J. Yi

doi:10.1049/el.2013.0812

High field-effect mobility amorphous InSnZnO thin-film transistors with low carrier concentration and oxygen vacancy

K. Jang
, J. Raja
, J. Kim
, Y. Lee
, D. Kim
, J. Yi

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The influence of carrier concentration and oxygen vacancy on the performance of amorphous-indium-tin-zinc-oxide (a-ITZO) thin-film transistors (TFTs) is reported. The ITZO TFT with lowest carrier concentration and oxygen vacancy has a high field-effect mobility (μ_FE) of 37.2 cm ²/V•s, a high on/off current ratio (I_ON/I _OFF) of ~1 × 10⁷ and a low subthreshold swing (SS) of 0.93 V/decade. By increasing the carrier concentration and oxygen vacancy, μ_FE, I_ON/OFF and SS were surprisingly degraded to 14.4 cm²/V•s, ~4 × 10⁴ and 4.01 V/decade, respectively. By controlling the carrier concentration and oxygen vacancies of ITZO bulk, improvement of the performance in TFT devices can be achieved. The proposed high μ_FE of 37.2 cm²/V•s is enough for the application of next-generation displays requiring ultra-high resolution and high-frame-rate displays.

Original language	English
Pages (from-to)	1030-1031
Number of pages	2
Journal	Electronics Letters
Volume	49
Issue number	16
DOIs	https://doi.org/10.1049/el.2013.0812
State	Published - 1 Aug 2013

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title = "High field-effect mobility amorphous InSnZnO thin-film transistors with low carrier concentration and oxygen vacancy",

abstract = "The influence of carrier concentration and oxygen vacancy on the performance of amorphous-indium-tin-zinc-oxide (a-ITZO) thin-film transistors (TFTs) is reported. The ITZO TFT with lowest carrier concentration and oxygen vacancy has a high field-effect mobility (μFE) of 37.2 cm 2/V•s, a high on/off current ratio (ION/I OFF) of \textasciitilde{}1 × 107 and a low subthreshold swing (SS) of 0.93 V/decade. By increasing the carrier concentration and oxygen vacancy, μFE, ION/OFF and SS were surprisingly degraded to 14.4 cm2/V•s, \textasciitilde{}4 × 104 and 4.01 V/decade, respectively. By controlling the carrier concentration and oxygen vacancies of ITZO bulk, improvement of the performance in TFT devices can be achieved. The proposed high μFE of 37.2 cm2/V•s is enough for the application of next-generation displays requiring ultra-high resolution and high-frame-rate displays.",

author = "K. Jang and J. Raja and J. Kim and Y. Lee and D. Kim and J. Yi",

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T1 - High field-effect mobility amorphous InSnZnO thin-film transistors with low carrier concentration and oxygen vacancy

AU - Jang, K.

AU - Raja, J.

AU - Kim, J.

AU - Lee, Y.

AU - Kim, D.

AU - Yi, J.

PY - 2013/8/1

Y1 - 2013/8/1

N2 - The influence of carrier concentration and oxygen vacancy on the performance of amorphous-indium-tin-zinc-oxide (a-ITZO) thin-film transistors (TFTs) is reported. The ITZO TFT with lowest carrier concentration and oxygen vacancy has a high field-effect mobility (μFE) of 37.2 cm 2/V•s, a high on/off current ratio (ION/I OFF) of ~1 × 107 and a low subthreshold swing (SS) of 0.93 V/decade. By increasing the carrier concentration and oxygen vacancy, μFE, ION/OFF and SS were surprisingly degraded to 14.4 cm2/V•s, ~4 × 104 and 4.01 V/decade, respectively. By controlling the carrier concentration and oxygen vacancies of ITZO bulk, improvement of the performance in TFT devices can be achieved. The proposed high μFE of 37.2 cm2/V•s is enough for the application of next-generation displays requiring ultra-high resolution and high-frame-rate displays.

AB - The influence of carrier concentration and oxygen vacancy on the performance of amorphous-indium-tin-zinc-oxide (a-ITZO) thin-film transistors (TFTs) is reported. The ITZO TFT with lowest carrier concentration and oxygen vacancy has a high field-effect mobility (μFE) of 37.2 cm 2/V•s, a high on/off current ratio (ION/I OFF) of ~1 × 107 and a low subthreshold swing (SS) of 0.93 V/decade. By increasing the carrier concentration and oxygen vacancy, μFE, ION/OFF and SS were surprisingly degraded to 14.4 cm2/V•s, ~4 × 104 and 4.01 V/decade, respectively. By controlling the carrier concentration and oxygen vacancies of ITZO bulk, improvement of the performance in TFT devices can be achieved. The proposed high μFE of 37.2 cm2/V•s is enough for the application of next-generation displays requiring ultra-high resolution and high-frame-rate displays.

UR - https://www.scopus.com/pages/publications/84881041280

U2 - 10.1049/el.2013.0812

DO - 10.1049/el.2013.0812

M3 - Article

AN - SCOPUS:84881041280

SN - 0013-5194

VL - 49

SP - 1030

EP - 1031

JO - Electronics Letters

JF - Electronics Letters

IS - 16

ER -

High field-effect mobility amorphous InSnZnO thin-film transistors with low carrier concentration and oxygen vacancy

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