High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates

Tae Il Kim; Yei Hwan Jung; Jizhou Song; Daegon Kim; Yuhang Li; Hoon Sik Kim; Il Sun Song; Jonathan J. Wierer; Hsuan An Pao; Yonggang Huang; John A. Rogers

doi:10.1002/smll.201200382

High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates

Tae Il Kim
, Yei Hwan Jung
, Jizhou Song
, Daegon Kim
, Yuhang Li
, Hoon Sik Kim
, Il Sun Song
, Jonathan J. Wierer
, Hsuan An Pao
, Yonggang Huang
, John A. Rogers

Research output: Contribution to journal › Article › peer-review

211 Scopus citations

Abstract

A method for forming efficient, ultrathin GaN light-emitting diodes (LEDs) and for their assembly onto foreign substances is reported. The LEDs have lateral dimensions ranging from â̂1 mm × 1 mm to â̂25 μm × 25 μm. Quantitative experimental and theoretical studies show the benefits of small device geometry on thermal management, for both continuous and pulsed-mode operation, the latter of which suggests the potential use of these technologies in bio-integrated contexts.

Original language	English
Pages (from-to)	1643-1649
Number of pages	7
Journal	Small
Volume	8
Issue number	11
DOIs	https://doi.org/10.1002/smll.201200382
State	Published - 11 Jun 2012
Externally published	Yes

Keywords

flexible electronics
gallium nitride
laser lift-off (LLO)
light-emitting diodes
transfer printing

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10.1002/smll.201200382

Cite this

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title = "High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates",

abstract = "A method for forming efficient, ultrathin GaN light-emitting diodes (LEDs) and for their assembly onto foreign substances is reported. The LEDs have lateral dimensions ranging from {\^a}̂1 mm × 1 mm to {\^a}̂25 μm × 25 μm. Quantitative experimental and theoretical studies show the benefits of small device geometry on thermal management, for both continuous and pulsed-mode operation, the latter of which suggests the potential use of these technologies in bio-integrated contexts.",

keywords = "flexible electronics, gallium nitride, laser lift-off (LLO), light-emitting diodes, transfer printing",

author = "Kim, \{Tae Il\} and Jung, \{Yei Hwan\} and Jizhou Song and Daegon Kim and Yuhang Li and Kim, \{Hoon Sik\} and Song, \{Il Sun\} and Wierer, \{Jonathan J.\} and Pao, \{Hsuan An\} and Yonggang Huang and Rogers, \{John A.\}",

year = "2012",

month = jun,

day = "11",

doi = "10.1002/smll.201200382",

language = "English",

volume = "8",

pages = "1643--1649",

journal = "Small",

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TY - JOUR

T1 - High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates

AU - Kim, Tae Il

AU - Jung, Yei Hwan

AU - Song, Jizhou

AU - Kim, Daegon

AU - Li, Yuhang

AU - Kim, Hoon Sik

AU - Song, Il Sun

AU - Wierer, Jonathan J.

AU - Pao, Hsuan An

AU - Huang, Yonggang

AU - Rogers, John A.

PY - 2012/6/11

Y1 - 2012/6/11

N2 - A method for forming efficient, ultrathin GaN light-emitting diodes (LEDs) and for their assembly onto foreign substances is reported. The LEDs have lateral dimensions ranging from â̂1 mm × 1 mm to â̂25 μm × 25 μm. Quantitative experimental and theoretical studies show the benefits of small device geometry on thermal management, for both continuous and pulsed-mode operation, the latter of which suggests the potential use of these technologies in bio-integrated contexts.

AB - A method for forming efficient, ultrathin GaN light-emitting diodes (LEDs) and for their assembly onto foreign substances is reported. The LEDs have lateral dimensions ranging from â̂1 mm × 1 mm to â̂25 μm × 25 μm. Quantitative experimental and theoretical studies show the benefits of small device geometry on thermal management, for both continuous and pulsed-mode operation, the latter of which suggests the potential use of these technologies in bio-integrated contexts.

KW - flexible electronics

KW - gallium nitride

KW - laser lift-off (LLO)

KW - light-emitting diodes

KW - transfer printing

UR - https://www.scopus.com/pages/publications/84861885668

U2 - 10.1002/smll.201200382

DO - 10.1002/smll.201200382

M3 - Article

C2 - 22467223

AN - SCOPUS:84861885668

SN - 1613-6810

VL - 8

SP - 1643

EP - 1649

JO - Small

JF - Small

IS - 11

ER -

High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates

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Keywords

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