TY - GEN
T1 - High-efficiency, High-power Class-D Power Amplifier with 50W Output Using GaN Devices
AU - Park, Yeun Jeong
AU - Lee, Kang Yoon
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/8/17
Y1 - 2021/8/17
N2 - GaN (Gallium nitride) semiconductors have more than 10 times the power density of Si-based Latterly Diffused Metal Oxide Semiconductor (LDMOS) transistors used in conventional Power Amplifiers, enabling more than 30% power savings and higher power density and efficiency. In this paper, we design a high-efficiency, high-power Class-D Power Amplifier with output higher than 40W by controlling the full-bridge structure composed of GaN elements using GaN drivers. The proposed Power Amplifier uses the Samsung 180nm process and designs 5 V as supply power.
AB - GaN (Gallium nitride) semiconductors have more than 10 times the power density of Si-based Latterly Diffused Metal Oxide Semiconductor (LDMOS) transistors used in conventional Power Amplifiers, enabling more than 30% power savings and higher power density and efficiency. In this paper, we design a high-efficiency, high-power Class-D Power Amplifier with output higher than 40W by controlling the full-bridge structure composed of GaN elements using GaN drivers. The proposed Power Amplifier uses the Samsung 180nm process and designs 5 V as supply power.
KW - Class-D Power Amplifier
KW - Dead-Time Geverator
KW - Full-Brigde GaN core
KW - High Efficiency
KW - Voltage Control Delay Loop(VCDL)
UR - https://www.scopus.com/pages/publications/85115614084
U2 - 10.1109/ICUFN49451.2021.9528632
DO - 10.1109/ICUFN49451.2021.9528632
M3 - Conference contribution
AN - SCOPUS:85115614084
T3 - International Conference on Ubiquitous and Future Networks, ICUFN
SP - 44
EP - 47
BT - ICUFN 2021 - 2021 12th International Conference on Ubiquitous and Future Networks
PB - IEEE Computer Society
T2 - 12th International Conference on Ubiquitous and Future Networks, ICUFN 2021
Y2 - 17 August 2021 through 20 August 2021
ER -