High-efficiency class-F amplifier design in the presence of internal parasitic components of transistors

Hyun Chul Park; Gunhyun Ahn; Sung Chan Jung; Cheon Seok Park; Wan Soo Nah; Byungsung Kim; Youngoo Yang

doi:10.1109/EUMC.2006.281249

High-efficiency class-F amplifier design in the presence of internal parasitic components of transistors

Hyun Chul Park
, Gunhyun Ahn
, Sung Chan Jung
, Cheon Seok Park
, Wan Soo Nah
, Byungsung Kim
, Youngoo Yang

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

16 Scopus citations

Abstract

In this paper, we present an efficient design method for high efficiency class-F amplifiers considering active devices with internal parasitic components. Considering internal drain current/voltage waveforms observed at the internal drain current source of the transistor, harmonics control and fundamental matching circuits are optimized to have higher power-added efficiency (PAE). Two 1.2GHz amplifiers were designed using a large-signal model of an LDMOSFET: One had harmonics control circuits optimized for external current/voltage waveforms and another had them optimized for internal waveforms. Simulation of the class-F amplifiers with two different output networks was conducted. Class-F amplifiers having an output network optimized for internal waveforms had 19% higher PAE (79% versus 60%).

Original language	English
Title of host publication	Proceedings of the 36th European Microwave Conference, EuMC 2006
Publisher	IEEE Computer Society
Pages	184-187
Number of pages	4
ISBN (Print)	2960055160, 9782960055160
DOIs	https://doi.org/10.1109/EUMC.2006.281249
State	Published - 2006
Event	36th European Microwave Conference, EuMC 2006 - Manchester, United Kingdom Duration: 10 Sep 2006 → 12 Sep 2006

Publication series

Name	Proceedings of the 36th European Microwave Conference, EuMC 2006

Conference

Conference	36th European Microwave Conference, EuMC 2006
Country/Territory	United Kingdom
City	Manchester
Period	10/09/06 → 12/09/06

Access to Document

10.1109/EUMC.2006.281249

Cite this

Park, H. C., Ahn, G., Jung, S. C., Park, C. S., Nah, W. S., Kim, B., & Yang, Y. (2006). High-efficiency class-F amplifier design in the presence of internal parasitic components of transistors. In Proceedings of the 36th European Microwave Conference, EuMC 2006 (pp. 184-187). Article 4057778 (Proceedings of the 36th European Microwave Conference, EuMC 2006). IEEE Computer Society. https://doi.org/10.1109/EUMC.2006.281249

@inproceedings{587d6b4eee9446f4b61743a5dac81eda,

title = "High-efficiency class-F amplifier design in the presence of internal parasitic components of transistors",

abstract = "In this paper, we present an efficient design method for high efficiency class-F amplifiers considering active devices with internal parasitic components. Considering internal drain current/voltage waveforms observed at the internal drain current source of the transistor, harmonics control and fundamental matching circuits are optimized to have higher power-added efficiency (PAE). Two 1.2GHz amplifiers were designed using a large-signal model of an LDMOSFET: One had harmonics control circuits optimized for external current/voltage waveforms and another had them optimized for internal waveforms. Simulation of the class-F amplifiers with two different output networks was conducted. Class-F amplifiers having an output network optimized for internal waveforms had 19\% higher PAE (79\% versus 60\%).",

author = "Park, \{Hyun Chul\} and Gunhyun Ahn and Jung, \{Sung Chan\} and Park, \{Cheon Seok\} and Nah, \{Wan Soo\} and Byungsung Kim and Youngoo Yang",

year = "2006",

doi = "10.1109/EUMC.2006.281249",

language = "English",

isbn = "2960055160",

series = "Proceedings of the 36th European Microwave Conference, EuMC 2006",

publisher = "IEEE Computer Society",

pages = "184--187",

booktitle = "Proceedings of the 36th European Microwave Conference, EuMC 2006",

note = "36th European Microwave Conference, EuMC 2006 ; Conference date: 10-09-2006 Through 12-09-2006",

}

Park, HC, Ahn, G, Jung, SC, Park, CS, Nah, WS, Kim, B & Yang, Y 2006, High-efficiency class-F amplifier design in the presence of internal parasitic components of transistors. in Proceedings of the 36th European Microwave Conference, EuMC 2006., 4057778, Proceedings of the 36th European Microwave Conference, EuMC 2006, IEEE Computer Society, pp. 184-187, 36th European Microwave Conference, EuMC 2006, Manchester, United Kingdom, 10/09/06. https://doi.org/10.1109/EUMC.2006.281249

High-efficiency class-F amplifier design in the presence of internal parasitic components of transistors. / Park, Hyun Chul; Ahn, Gunhyun; Jung, Sung Chan et al.
Proceedings of the 36th European Microwave Conference, EuMC 2006. IEEE Computer Society, 2006. p. 184-187 4057778 (Proceedings of the 36th European Microwave Conference, EuMC 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High-efficiency class-F amplifier design in the presence of internal parasitic components of transistors

AU - Park, Hyun Chul

AU - Ahn, Gunhyun

AU - Jung, Sung Chan

AU - Park, Cheon Seok

AU - Nah, Wan Soo

AU - Kim, Byungsung

AU - Yang, Youngoo

PY - 2006

Y1 - 2006

N2 - In this paper, we present an efficient design method for high efficiency class-F amplifiers considering active devices with internal parasitic components. Considering internal drain current/voltage waveforms observed at the internal drain current source of the transistor, harmonics control and fundamental matching circuits are optimized to have higher power-added efficiency (PAE). Two 1.2GHz amplifiers were designed using a large-signal model of an LDMOSFET: One had harmonics control circuits optimized for external current/voltage waveforms and another had them optimized for internal waveforms. Simulation of the class-F amplifiers with two different output networks was conducted. Class-F amplifiers having an output network optimized for internal waveforms had 19% higher PAE (79% versus 60%).

AB - In this paper, we present an efficient design method for high efficiency class-F amplifiers considering active devices with internal parasitic components. Considering internal drain current/voltage waveforms observed at the internal drain current source of the transistor, harmonics control and fundamental matching circuits are optimized to have higher power-added efficiency (PAE). Two 1.2GHz amplifiers were designed using a large-signal model of an LDMOSFET: One had harmonics control circuits optimized for external current/voltage waveforms and another had them optimized for internal waveforms. Simulation of the class-F amplifiers with two different output networks was conducted. Class-F amplifiers having an output network optimized for internal waveforms had 19% higher PAE (79% versus 60%).

UR - https://www.scopus.com/pages/publications/41649113532

U2 - 10.1109/EUMC.2006.281249

DO - 10.1109/EUMC.2006.281249

M3 - Conference contribution

AN - SCOPUS:41649113532

SN - 2960055160

SN - 9782960055160

T3 - Proceedings of the 36th European Microwave Conference, EuMC 2006

SP - 184

EP - 187

BT - Proceedings of the 36th European Microwave Conference, EuMC 2006

PB - IEEE Computer Society

T2 - 36th European Microwave Conference, EuMC 2006

Y2 - 10 September 2006 through 12 September 2006

ER -

Park HC, Ahn G, Jung SC, Park CS, Nah WS, Kim B et al. High-efficiency class-F amplifier design in the presence of internal parasitic components of transistors. In Proceedings of the 36th European Microwave Conference, EuMC 2006. IEEE Computer Society. 2006. p. 184-187. 4057778. (Proceedings of the 36th European Microwave Conference, EuMC 2006). doi: 10.1109/EUMC.2006.281249

High-efficiency class-F amplifier design in the presence of internal parasitic components of transistors

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