High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared

Woong Choi; Mi Yeon Cho; Aniruddha Konar; Jong Hak Lee; Gi Beom Cha; Soon Cheol Hong; Sangsig Kim; Jeongyong Kim; Debdeep Jena; Jinsoo Joo; Sunkook Kim

doi:10.1002/adma.201201909

High-detectivity multilayer MoS₂ phototransistors with spectral response from ultraviolet to infrared

Woong Choi
, Mi Yeon Cho
, Aniruddha Konar
, Jong Hak Lee
, Gi Beom Cha
, Soon Cheol Hong
, Sangsig Kim
, Jeongyong Kim
, Debdeep Jena
, Jinsoo Joo
, Sunkook Kim

Kookmin University
Korea University
University of Notre Dame
Kyung Hee University
University of Ulsan
Incheon National University

Research output: Contribution to journal › Article › peer-review

1103 Scopus citations

Abstract

Phototransistors based on multilayer MoS₂ crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS₂ phototransistors. Multilayer MoS₂ phototransistors further exhibit high room temperature mobilities (>70 cm²V^-1s^-1), near-ideal subthreshold swings (∼70 mV decade^-1), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.

Original language	English
Pages (from-to)	5832-5836
Number of pages	5
Journal	Advanced Materials
Volume	24
Issue number	43
DOIs	https://doi.org/10.1002/adma.201201909
State	Published - 14 Nov 2012
Externally published	Yes

Keywords

MoS
phototransistors
transition metal dichalcogenide

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10.1002/adma.201201909

Cite this

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title = "High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared",

abstract = "Phototransistors based on multilayer MoS2 crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS2 phototransistors. Multilayer MoS2 phototransistors further exhibit high room temperature mobilities (>70 cm2V-1s-1), near-ideal subthreshold swings (∼70 mV decade-1), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.",

keywords = "MoS, phototransistors, transition metal dichalcogenide",

author = "Woong Choi and Cho, \{Mi Yeon\} and Aniruddha Konar and Lee, \{Jong Hak\} and Cha, \{Gi Beom\} and Hong, \{Soon Cheol\} and Sangsig Kim and Jeongyong Kim and Debdeep Jena and Jinsoo Joo and Sunkook Kim",

year = "2012",

month = nov,

day = "14",

doi = "10.1002/adma.201201909",

language = "English",

volume = "24",

pages = "5832--5836",

journal = "Advanced Materials",

issn = "0935-9648",

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TY - JOUR

T1 - High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared

AU - Choi, Woong

AU - Cho, Mi Yeon

AU - Konar, Aniruddha

AU - Lee, Jong Hak

AU - Cha, Gi Beom

AU - Hong, Soon Cheol

AU - Kim, Sangsig

AU - Kim, Jeongyong

AU - Jena, Debdeep

AU - Joo, Jinsoo

AU - Kim, Sunkook

PY - 2012/11/14

Y1 - 2012/11/14

N2 - Phototransistors based on multilayer MoS2 crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS2 phototransistors. Multilayer MoS2 phototransistors further exhibit high room temperature mobilities (>70 cm2V-1s-1), near-ideal subthreshold swings (∼70 mV decade-1), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.

AB - Phototransistors based on multilayer MoS2 crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS2 phototransistors. Multilayer MoS2 phototransistors further exhibit high room temperature mobilities (>70 cm2V-1s-1), near-ideal subthreshold swings (∼70 mV decade-1), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.

KW - MoS

KW - phototransistors

KW - transition metal dichalcogenide

UR - https://www.scopus.com/pages/publications/84868713254

U2 - 10.1002/adma.201201909

DO - 10.1002/adma.201201909

M3 - Article

C2 - 22903762

AN - SCOPUS:84868713254

SN - 0935-9648

VL - 24

SP - 5832

EP - 5836

JO - Advanced Materials

JF - Advanced Materials

IS - 43

ER -

High-detectivity multilayer MoS₂ phototransistors with spectral response from ultraviolet to infrared

Abstract

Keywords

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