TY - JOUR
T1 - High charge storage of poly-Si thin film nonvolatile memory devices with oxide-silicon-oxynitride stack structures
AU - Jung, Sungwook
AU - Jang, Kyungsoo
AU - Lee, Youn Jung
AU - Jin, Zhenghai
AU - Yi, Junsin
PY - 2010/3/25
Y1 - 2010/3/25
N2 - Polycrystalline silicon (poly-Si) thin film nonvolatile memory (NVM) devices with an oxide-silicon-oxynitride (OSOn) stack structure using an amorphous silicon (a-Si) as a storage layer on a glass panel were fabricated and investigated for high charge storage of memory applications in systems-on-panels (SOPs). Because the band gap of a-Si is lower than that of silicon nitride (SiNx) and a larger band gap offset provides more room for charge storage, a-Si thin layer with high charge injection can be applied to the fabrication of poly-Si NVM devices. The trap densities of a-Si thin films deposited by different flow ratios of H2 and silane (SiH4) were calculated to determine the optimal conditions for the charge storage layer. Poly-Si thin film transistor (TFT) technology, plasma-assisted oxynitridation to deposit an ultra-thin tunneling layer, and an optimal a-Si thin film charge storage layer were used to fabricate poly-Si NVM devices on glass substrate. A large memory window of +3.02 V to -1.68 V was obtained at a low operating voltage with an erasing voltage of +10 V and a programming voltage of -10 V due to high charge storage sites in the a-Si thin film. Our results demonstrate that poly-Si NVM devices with a-Si thin film as a charge storage layer on a glass panel can be applied to system applications of flat panel displays (FPDs) due to their large memory windows at low operating voltage.
AB - Polycrystalline silicon (poly-Si) thin film nonvolatile memory (NVM) devices with an oxide-silicon-oxynitride (OSOn) stack structure using an amorphous silicon (a-Si) as a storage layer on a glass panel were fabricated and investigated for high charge storage of memory applications in systems-on-panels (SOPs). Because the band gap of a-Si is lower than that of silicon nitride (SiNx) and a larger band gap offset provides more room for charge storage, a-Si thin layer with high charge injection can be applied to the fabrication of poly-Si NVM devices. The trap densities of a-Si thin films deposited by different flow ratios of H2 and silane (SiH4) were calculated to determine the optimal conditions for the charge storage layer. Poly-Si thin film transistor (TFT) technology, plasma-assisted oxynitridation to deposit an ultra-thin tunneling layer, and an optimal a-Si thin film charge storage layer were used to fabricate poly-Si NVM devices on glass substrate. A large memory window of +3.02 V to -1.68 V was obtained at a low operating voltage with an erasing voltage of +10 V and a programming voltage of -10 V due to high charge storage sites in the a-Si thin film. Our results demonstrate that poly-Si NVM devices with a-Si thin film as a charge storage layer on a glass panel can be applied to system applications of flat panel displays (FPDs) due to their large memory windows at low operating voltage.
KW - Glass substrate
KW - High charge storage sites
KW - Low voltage operation
KW - Oxide-silicon-oxynitride (OSOn)
KW - Poly-Si nonvolatile memory (NVM) device
UR - https://www.scopus.com/pages/publications/77949487091
U2 - 10.1016/j.mseb.2010.01.059
DO - 10.1016/j.mseb.2010.01.059
M3 - Article
AN - SCOPUS:77949487091
SN - 0921-5107
VL - 167
SP - 167
EP - 170
JO - Materials Science and Engineering B
JF - Materials Science and Engineering B
IS - 3
ER -
