High aspect ratio via etching conditions for deep trench of silicon

W. J. Park; J. H. Kim; S. M. Cho; S. G. Yoon; S. J. Suh; D. H. Yoon

doi:10.1016/S0257-8972(03)00288-3

High aspect ratio via etching conditions for deep trench of silicon

W. J. Park, J. H. Kim, S. M. Cho, S. G. Yoon, S. J. Suh, D. H. Yoon

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Deep trench etching of silicon was investigated as a function of platen power, operational pressure and the SF₆:C₄F ₈ gas flow rate. Their effects on the etch rate, etch profile and scallops were also studied. As the platen power was increased from 5 to 30 W, the etch rate was increased from 0.54 to 2.51 μm/min. However, the etch rate was decreased at platen power higher than 30 W. As the pressure was increased from 10 to 25 mTorr, the etch rate was increased from 1.93 to 2.69 μm/min but the etch rate was decreased at the pressure higher than 35 mTorr. As the SF ₆:C₄F₈ gas flow rate was increased from 50:50 to 200:160 sccm, the etch rate was increased from 1.91 to 2.31 μm/min and at the SF₆:C₄F₈ gas flow rate of 260:220 sccm, it was decreased to 2.21 μm/min.

Original language	English
Pages (from-to)	290-295
Number of pages	6
Journal	Surface and Coatings Technology
Volume	171
Issue number	1-3
DOIs	https://doi.org/10.1016/S0257-8972(03)00288-3
State	Published - 1 Jul 2003

Keywords

Dry etching
Etch profile
Inductively coupled plasma
Scallops
Silicon deep trench

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10.1016/S0257-8972(03)00288-3

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title = "High aspect ratio via etching conditions for deep trench of silicon",

abstract = "Deep trench etching of silicon was investigated as a function of platen power, operational pressure and the SF6:C4F 8 gas flow rate. Their effects on the etch rate, etch profile and scallops were also studied. As the platen power was increased from 5 to 30 W, the etch rate was increased from 0.54 to 2.51 μm/min. However, the etch rate was decreased at platen power higher than 30 W. As the pressure was increased from 10 to 25 mTorr, the etch rate was increased from 1.93 to 2.69 μm/min but the etch rate was decreased at the pressure higher than 35 mTorr. As the SF 6:C4F8 gas flow rate was increased from 50:50 to 200:160 sccm, the etch rate was increased from 1.91 to 2.31 μm/min and at the SF6:C4F8 gas flow rate of 260:220 sccm, it was decreased to 2.21 μm/min.",

keywords = "Dry etching, Etch profile, Inductively coupled plasma, Scallops, Silicon deep trench",

author = "Park, \{W. J.\} and Kim, \{J. H.\} and Cho, \{S. M.\} and Yoon, \{S. G.\} and Suh, \{S. J.\} and Yoon, \{D. H.\}",

year = "2003",

month = jul,

day = "1",

doi = "10.1016/S0257-8972(03)00288-3",

language = "English",

volume = "171",

pages = "290--295",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

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number = "1-3",

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TY - JOUR

T1 - High aspect ratio via etching conditions for deep trench of silicon

AU - Park, W. J.

AU - Kim, J. H.

AU - Cho, S. M.

AU - Yoon, S. G.

AU - Suh, S. J.

AU - Yoon, D. H.

PY - 2003/7/1

Y1 - 2003/7/1

N2 - Deep trench etching of silicon was investigated as a function of platen power, operational pressure and the SF6:C4F 8 gas flow rate. Their effects on the etch rate, etch profile and scallops were also studied. As the platen power was increased from 5 to 30 W, the etch rate was increased from 0.54 to 2.51 μm/min. However, the etch rate was decreased at platen power higher than 30 W. As the pressure was increased from 10 to 25 mTorr, the etch rate was increased from 1.93 to 2.69 μm/min but the etch rate was decreased at the pressure higher than 35 mTorr. As the SF 6:C4F8 gas flow rate was increased from 50:50 to 200:160 sccm, the etch rate was increased from 1.91 to 2.31 μm/min and at the SF6:C4F8 gas flow rate of 260:220 sccm, it was decreased to 2.21 μm/min.

AB - Deep trench etching of silicon was investigated as a function of platen power, operational pressure and the SF6:C4F 8 gas flow rate. Their effects on the etch rate, etch profile and scallops were also studied. As the platen power was increased from 5 to 30 W, the etch rate was increased from 0.54 to 2.51 μm/min. However, the etch rate was decreased at platen power higher than 30 W. As the pressure was increased from 10 to 25 mTorr, the etch rate was increased from 1.93 to 2.69 μm/min but the etch rate was decreased at the pressure higher than 35 mTorr. As the SF 6:C4F8 gas flow rate was increased from 50:50 to 200:160 sccm, the etch rate was increased from 1.91 to 2.31 μm/min and at the SF6:C4F8 gas flow rate of 260:220 sccm, it was decreased to 2.21 μm/min.

KW - Dry etching

KW - Etch profile

KW - Inductively coupled plasma

KW - Scallops

KW - Silicon deep trench

UR - https://www.scopus.com/pages/publications/0038382887

U2 - 10.1016/S0257-8972(03)00288-3

DO - 10.1016/S0257-8972(03)00288-3

M3 - Article

AN - SCOPUS:0038382887

SN - 0257-8972

VL - 171

SP - 290

EP - 295

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 1-3

ER -

High aspect ratio via etching conditions for deep trench of silicon

Abstract

Keywords

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