HfO 2-Based RRAM devices with varying contact sizes and their electrical behavior

Venkatakrishnan Sriraman; Xiang Li; Navab Singh; Sungjoo Lee

doi:10.1109/LED.2012.2195709

HfO ₂-Based RRAM devices with varying contact sizes and their electrical behavior

Venkatakrishnan Sriraman
, Xiang Li
, Navab Singh
, Sungjoo Lee

National University of Singapore
Agency for Science, Technology and Research, Singapore
Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

In this letter, HfO ₂-based RRAM with varying device sizes is discussed with an analysis of the device-size dependence on reset current (I _reset). Device sizes down to 60 nm were achieved by using different thicknesses of nitride spacer after 200-nm contact hole is formed. Platinum (Pt) bottom electrode and titanium nitride (TiN) top electrode were used with HfO ₂ dielectric as the resistance switching layer. Uniform bipolar switching characteristics with a very low I _reset of about 100 μA are achieved in 60-nm contact size devices. Self-compliance effect is also observed in the scaled devices.

Original language	English
Article number	6205602
Pages (from-to)	1060-1062
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	7
DOIs	https://doi.org/10.1109/LED.2012.2195709
State	Published - 2012
Externally published	Yes

Keywords

Bipolar switching
resistive random access memory (RRAM)
self-compliance

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10.1109/LED.2012.2195709

Cite this

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title = "HfO 2-Based RRAM devices with varying contact sizes and their electrical behavior",

abstract = "In this letter, HfO 2-based RRAM with varying device sizes is discussed with an analysis of the device-size dependence on reset current (I reset). Device sizes down to 60 nm were achieved by using different thicknesses of nitride spacer after 200-nm contact hole is formed. Platinum (Pt) bottom electrode and titanium nitride (TiN) top electrode were used with HfO 2 dielectric as the resistance switching layer. Uniform bipolar switching characteristics with a very low I reset of about 100 μA are achieved in 60-nm contact size devices. Self-compliance effect is also observed in the scaled devices.",

keywords = "Bipolar switching, resistive random access memory (RRAM), self-compliance",

author = "Venkatakrishnan Sriraman and Xiang Li and Navab Singh and Sungjoo Lee",

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language = "English",

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AU - Sriraman, Venkatakrishnan

AU - Li, Xiang

AU - Singh, Navab

AU - Lee, Sungjoo

PY - 2012

Y1 - 2012

N2 - In this letter, HfO 2-based RRAM with varying device sizes is discussed with an analysis of the device-size dependence on reset current (I reset). Device sizes down to 60 nm were achieved by using different thicknesses of nitride spacer after 200-nm contact hole is formed. Platinum (Pt) bottom electrode and titanium nitride (TiN) top electrode were used with HfO 2 dielectric as the resistance switching layer. Uniform bipolar switching characteristics with a very low I reset of about 100 μA are achieved in 60-nm contact size devices. Self-compliance effect is also observed in the scaled devices.

AB - In this letter, HfO 2-based RRAM with varying device sizes is discussed with an analysis of the device-size dependence on reset current (I reset). Device sizes down to 60 nm were achieved by using different thicknesses of nitride spacer after 200-nm contact hole is formed. Platinum (Pt) bottom electrode and titanium nitride (TiN) top electrode were used with HfO 2 dielectric as the resistance switching layer. Uniform bipolar switching characteristics with a very low I reset of about 100 μA are achieved in 60-nm contact size devices. Self-compliance effect is also observed in the scaled devices.

KW - Bipolar switching

KW - resistive random access memory (RRAM)

KW - self-compliance

UR - https://www.scopus.com/pages/publications/84862895326

U2 - 10.1109/LED.2012.2195709

DO - 10.1109/LED.2012.2195709

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SP - 1060

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

M1 - 6205602

ER -

HfO ₂-Based RRAM devices with varying contact sizes and their electrical behavior

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Keywords

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