Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy

H. S. Ahn; K. H. Kim; M. Yang; J. Y. Yi; H. J. Lee; C. R. Cho; H. K. Cho; S. W. Kim; T. Narita; Y. Honda; M. Yamaguchi; N. Sawaki

doi:10.1016/j.apsusc.2004.09.117

Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy

H. S. Ahn
, K. H. Kim
, M. Yang
, J. Y. Yi
, H. J. Lee
, C. R. Cho
, H. K. Cho
, S. W. Kim
, T. Narita
, Y. Honda
, M. Yamaguchi
, N. Sawaki

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Growth of a thick AlGaN layer on GaN/Al₂O₃ substrate is performed by mixed-source hydride vapor phase epitaxy (HVPE) method. The AlGaN material is compounded from chemical reaction between a NH₃ and an aluminum-gallium chloride formed by HCl which is flown over metallic Ga mixed with Al. The AlGaN epitaxial layer is analyzed by Auger-electron spectroscopy (AES) and X-ray diffraction (XRD) measurement to characterize the AlGaN. Al concentration is estimated to be in the range of 0.5-6%. We suggest that the metallic Ga mixed with Al can be used as a group III source material in the HVPE growth of the AlGaN layer.

Original language	English
Pages (from-to)	178-182
Number of pages	5
Journal	Applied Surface Science
Volume	243
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2004.09.117
State	Published - 30 Apr 2005
Externally published	Yes

Keywords

AES
AlGaN
GaN
HVPE
Optical property
XRD

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10.1016/j.apsusc.2004.09.117

Cite this

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title = "Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy",

abstract = "Growth of a thick AlGaN layer on GaN/Al2O3 substrate is performed by mixed-source hydride vapor phase epitaxy (HVPE) method. The AlGaN material is compounded from chemical reaction between a NH3 and an aluminum-gallium chloride formed by HCl which is flown over metallic Ga mixed with Al. The AlGaN epitaxial layer is analyzed by Auger-electron spectroscopy (AES) and X-ray diffraction (XRD) measurement to characterize the AlGaN. Al concentration is estimated to be in the range of 0.5-6\%. We suggest that the metallic Ga mixed with Al can be used as a group III source material in the HVPE growth of the AlGaN layer.",

keywords = "AES, AlGaN, GaN, HVPE, Optical property, XRD",

author = "Ahn, \{H. S.\} and Kim, \{K. H.\} and M. Yang and Yi, \{J. Y.\} and Lee, \{H. J.\} and Cho, \{C. R.\} and Cho, \{H. K.\} and Kim, \{S. W.\} and T. Narita and Y. Honda and M. Yamaguchi and N. Sawaki",

year = "2005",

month = apr,

day = "30",

doi = "10.1016/j.apsusc.2004.09.117",

language = "English",

volume = "243",

pages = "178--182",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy

AU - Ahn, H. S.

AU - Kim, K. H.

AU - Yang, M.

AU - Yi, J. Y.

AU - Lee, H. J.

AU - Cho, C. R.

AU - Cho, H. K.

AU - Kim, S. W.

AU - Narita, T.

AU - Honda, Y.

AU - Yamaguchi, M.

AU - Sawaki, N.

PY - 2005/4/30

Y1 - 2005/4/30

N2 - Growth of a thick AlGaN layer on GaN/Al2O3 substrate is performed by mixed-source hydride vapor phase epitaxy (HVPE) method. The AlGaN material is compounded from chemical reaction between a NH3 and an aluminum-gallium chloride formed by HCl which is flown over metallic Ga mixed with Al. The AlGaN epitaxial layer is analyzed by Auger-electron spectroscopy (AES) and X-ray diffraction (XRD) measurement to characterize the AlGaN. Al concentration is estimated to be in the range of 0.5-6%. We suggest that the metallic Ga mixed with Al can be used as a group III source material in the HVPE growth of the AlGaN layer.

AB - Growth of a thick AlGaN layer on GaN/Al2O3 substrate is performed by mixed-source hydride vapor phase epitaxy (HVPE) method. The AlGaN material is compounded from chemical reaction between a NH3 and an aluminum-gallium chloride formed by HCl which is flown over metallic Ga mixed with Al. The AlGaN epitaxial layer is analyzed by Auger-electron spectroscopy (AES) and X-ray diffraction (XRD) measurement to characterize the AlGaN. Al concentration is estimated to be in the range of 0.5-6%. We suggest that the metallic Ga mixed with Al can be used as a group III source material in the HVPE growth of the AlGaN layer.

KW - AES

KW - AlGaN

KW - GaN

KW - HVPE

KW - Optical property

KW - XRD

UR - https://www.scopus.com/pages/publications/20044389468

U2 - 10.1016/j.apsusc.2004.09.117

DO - 10.1016/j.apsusc.2004.09.117

M3 - Article

AN - SCOPUS:20044389468

SN - 0169-4332

VL - 243

SP - 178

EP - 182

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy

Abstract

Keywords

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