Growth of single-crystalline cubic structured tin(II) sulfide (SnS) nanowires by chemical vapor deposition

Devika Mudusu; Koteeswara Reddy Nandanapalli; Sreekantha Reddy Dugasani; Jang Won Kang; Sung Ha Park; Charles W. Tu

doi:10.1039/c7ra06346f

Growth of single-crystalline cubic structured tin(II) sulfide (SnS) nanowires by chemical vapor deposition

Devika Mudusu, Koteeswara Reddy Nandanapalli, Sreekantha Reddy Dugasani, Jang Won Kang, Sung Ha Park, Charles W. Tu

Department of Physics

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Single crystalline tin(ii) sulfide (SnS) nanowires are synthesized using a chemical vapor deposition (CVD) method with the support of gold as catalyst. Field emission electron microscopy studies show that SnS nanostructures grown at temperatures between 600 and 700 °C have wire-like morphology. These nanowires have an average diameter between 12 and 15 nm with lengths up to several microns. These NWs consist of uniform and smooth surfaces, and exhibit nearly stoichiometric chemical composition (Sn/S = 1.13). Transmission electron microscopy analysis reveals that the NWs consist of single crystalline cubic crystal structure with a preferential growth direction of 〈100〉. Field-effect transistor devices fabricated with SnS nanowires show that the nanowires consist of p-type conductivity along with carrier density of 6 × 10¹⁸ cm^-3.

Original language	English
Pages (from-to)	41452-41459
Number of pages	8
Journal	RSC Advances
Volume	7
Issue number	66
DOIs	https://doi.org/10.1039/c7ra06346f
State	Published - 2017

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title = "Growth of single-crystalline cubic structured tin(II) sulfide (SnS) nanowires by chemical vapor deposition",

abstract = "Single crystalline tin(ii) sulfide (SnS) nanowires are synthesized using a chemical vapor deposition (CVD) method with the support of gold as catalyst. Field emission electron microscopy studies show that SnS nanostructures grown at temperatures between 600 and 700 °C have wire-like morphology. These nanowires have an average diameter between 12 and 15 nm with lengths up to several microns. These NWs consist of uniform and smooth surfaces, and exhibit nearly stoichiometric chemical composition (Sn/S = 1.13). Transmission electron microscopy analysis reveals that the NWs consist of single crystalline cubic crystal structure with a preferential growth direction of 〈100〉. Field-effect transistor devices fabricated with SnS nanowires show that the nanowires consist of p-type conductivity along with carrier density of 6 × 1018 cm-3.",

author = "Devika Mudusu and Nandanapalli, \{Koteeswara Reddy\} and Dugasani, \{Sreekantha Reddy\} and Kang, \{Jang Won\} and Park, \{Sung Ha\} and Tu, \{Charles W.\}",

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year = "2017",

doi = "10.1039/c7ra06346f",

language = "English",

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T1 - Growth of single-crystalline cubic structured tin(II) sulfide (SnS) nanowires by chemical vapor deposition

AU - Mudusu, Devika

AU - Nandanapalli, Koteeswara Reddy

AU - Dugasani, Sreekantha Reddy

AU - Kang, Jang Won

AU - Park, Sung Ha

AU - Tu, Charles W.

PY - 2017

Y1 - 2017

N2 - Single crystalline tin(ii) sulfide (SnS) nanowires are synthesized using a chemical vapor deposition (CVD) method with the support of gold as catalyst. Field emission electron microscopy studies show that SnS nanostructures grown at temperatures between 600 and 700 °C have wire-like morphology. These nanowires have an average diameter between 12 and 15 nm with lengths up to several microns. These NWs consist of uniform and smooth surfaces, and exhibit nearly stoichiometric chemical composition (Sn/S = 1.13). Transmission electron microscopy analysis reveals that the NWs consist of single crystalline cubic crystal structure with a preferential growth direction of 〈100〉. Field-effect transistor devices fabricated with SnS nanowires show that the nanowires consist of p-type conductivity along with carrier density of 6 × 1018 cm-3.

AB - Single crystalline tin(ii) sulfide (SnS) nanowires are synthesized using a chemical vapor deposition (CVD) method with the support of gold as catalyst. Field emission electron microscopy studies show that SnS nanostructures grown at temperatures between 600 and 700 °C have wire-like morphology. These nanowires have an average diameter between 12 and 15 nm with lengths up to several microns. These NWs consist of uniform and smooth surfaces, and exhibit nearly stoichiometric chemical composition (Sn/S = 1.13). Transmission electron microscopy analysis reveals that the NWs consist of single crystalline cubic crystal structure with a preferential growth direction of 〈100〉. Field-effect transistor devices fabricated with SnS nanowires show that the nanowires consist of p-type conductivity along with carrier density of 6 × 1018 cm-3.

UR - https://www.scopus.com/pages/publications/85028753679

U2 - 10.1039/c7ra06346f

DO - 10.1039/c7ra06346f

M3 - Article

AN - SCOPUS:85028753679

SN - 2046-2069

VL - 7

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EP - 41459

JO - RSC Advances

JF - RSC Advances

IS - 66

ER -

Growth of single-crystalline cubic structured tin(II) sulfide (SnS) nanowires by chemical vapor deposition

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