Growth of NbC thin film using CH4 as a carbon source and reducing agent

Kwan Woo Kim; Bum Jun Kim; Sang Hoon Lee; Tuqeer Nasir; Hyung Kyu Lim; Ik Jun Choi; Byung Joo Jeong; Jaeyeong Lee; Hak Ki Yu; Jae Young Choi

doi:10.3390/COATINGS8110379

Growth of NbC thin film using CH₄ as a carbon source and reducing agent

Kwan Woo Kim, Bum Jun Kim, Sang Hoon Lee, Tuqeer Nasir, Hyung Kyu Lim, Ik Jun Choi, Byung Joo Jeong, Jaeyeong Lee, Hak Ki Yu, Jae Young Choi

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Transition metal carbides (TMCs) have high melting points, hardness, and chemical stabilities in acidic media. In this work, a chemical vapor deposition method using CH₄ as a carbon source and reducing agent was employed to make an NbC film. NbCl₅ carried by Ar gas was used as an Nb precursor. An NbC thin film, deposited on a c-plane sapphire, exhibited a preferential orientation of the (111) plane, which can be explained by domain-matching epitaxy. A nanoindentation test showed that the NbC film with the preferential orientation of the (111) plane was stronger than that with a random orientation. Moreover, the results showed that H₂, which is conventionally used as a reducing agent in NbC synthesis, degraded the crystallinity and hardness of the fabricated NbC.

Original language	English
Article number	379
Journal	Coatings
Volume	8
Issue number	11
DOIs	https://doi.org/10.3390/COATINGS8110379
State	Published - 2018

Keywords

C-plane sapphire
Chemical vapor deposition (CVD)
NbC film
Preferential orientation; domain matching epitaxy (DME)
Reducing agent
Transition metal carbides (TMCs)

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10.3390/COATINGS8110379

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@article{9d3d143048ef44299896e368f87c3787,

title = "Growth of NbC thin film using CH4 as a carbon source and reducing agent",

abstract = "Transition metal carbides (TMCs) have high melting points, hardness, and chemical stabilities in acidic media. In this work, a chemical vapor deposition method using CH4 as a carbon source and reducing agent was employed to make an NbC film. NbCl5 carried by Ar gas was used as an Nb precursor. An NbC thin film, deposited on a c-plane sapphire, exhibited a preferential orientation of the (111) plane, which can be explained by domain-matching epitaxy. A nanoindentation test showed that the NbC film with the preferential orientation of the (111) plane was stronger than that with a random orientation. Moreover, the results showed that H2, which is conventionally used as a reducing agent in NbC synthesis, degraded the crystallinity and hardness of the fabricated NbC.",

keywords = "C-plane sapphire, Chemical vapor deposition (CVD), NbC film, Preferential orientation; domain matching epitaxy (DME), Reducing agent, Transition metal carbides (TMCs)",

author = "Kim, \{Kwan Woo\} and Kim, \{Bum Jun\} and Lee, \{Sang Hoon\} and Tuqeer Nasir and Lim, \{Hyung Kyu\} and Choi, \{Ik Jun\} and Jeong, \{Byung Joo\} and Jaeyeong Lee and Yu, \{Hak Ki\} and Choi, \{Jae Young\}",

note = "Publisher Copyright: {\textcopyright} 2018 by the authors.",

year = "2018",

doi = "10.3390/COATINGS8110379",

language = "English",

volume = "8",

journal = "Coatings",

issn = "2079-6412",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "11",

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TY - JOUR

T1 - Growth of NbC thin film using CH4 as a carbon source and reducing agent

AU - Kim, Kwan Woo

AU - Kim, Bum Jun

AU - Lee, Sang Hoon

AU - Nasir, Tuqeer

AU - Lim, Hyung Kyu

AU - Choi, Ik Jun

AU - Jeong, Byung Joo

AU - Lee, Jaeyeong

AU - Yu, Hak Ki

AU - Choi, Jae Young

PY - 2018

Y1 - 2018

N2 - Transition metal carbides (TMCs) have high melting points, hardness, and chemical stabilities in acidic media. In this work, a chemical vapor deposition method using CH4 as a carbon source and reducing agent was employed to make an NbC film. NbCl5 carried by Ar gas was used as an Nb precursor. An NbC thin film, deposited on a c-plane sapphire, exhibited a preferential orientation of the (111) plane, which can be explained by domain-matching epitaxy. A nanoindentation test showed that the NbC film with the preferential orientation of the (111) plane was stronger than that with a random orientation. Moreover, the results showed that H2, which is conventionally used as a reducing agent in NbC synthesis, degraded the crystallinity and hardness of the fabricated NbC.

AB - Transition metal carbides (TMCs) have high melting points, hardness, and chemical stabilities in acidic media. In this work, a chemical vapor deposition method using CH4 as a carbon source and reducing agent was employed to make an NbC film. NbCl5 carried by Ar gas was used as an Nb precursor. An NbC thin film, deposited on a c-plane sapphire, exhibited a preferential orientation of the (111) plane, which can be explained by domain-matching epitaxy. A nanoindentation test showed that the NbC film with the preferential orientation of the (111) plane was stronger than that with a random orientation. Moreover, the results showed that H2, which is conventionally used as a reducing agent in NbC synthesis, degraded the crystallinity and hardness of the fabricated NbC.

KW - C-plane sapphire

KW - Chemical vapor deposition (CVD)

KW - NbC film

KW - Preferential orientation; domain matching epitaxy (DME)

KW - Reducing agent

KW - Transition metal carbides (TMCs)

UR - https://www.scopus.com/pages/publications/85069768838

U2 - 10.3390/COATINGS8110379

DO - 10.3390/COATINGS8110379

M3 - Article

AN - SCOPUS:85069768838

SN - 2079-6412

VL - 8

JO - Coatings

JF - Coatings

IS - 11

M1 - 379

ER -

Growth of NbC thin film using CH₄ as a carbon source and reducing agent

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Keywords

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