Growth of MgTiO3 thin films by pulsed laser deposition and their electrical properties

S. Kang; W. Lim; J. Lee

doi:10.1080/10584580008215644

Growth of MgTiO₃ thin films by pulsed laser deposition and their electrical properties

S. Kang
, W. Lim
, J. Lee

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

MgTiO₃ thin films have been grown on various substrates by pulsed laser deposition (PLD) to investigate the application for microwave dielectrics and optical devices. Highly oriented MgTiO₃ thin films were obtained on sapphire (c-plane Al₂O₃). MgTiO₃ thin films deposited on SiO₂/Si and platinized silicon (Pt/Ti/SiO₂/Si) substrates were polycrystalline nature MgTiO₃ thin films grown on sapphire were transparent in the visible and had a sharp absorption edge at 280 nm. These MgTiO₃ thin films had extremely fine feature of surface morphology, i.e., rms roughness of 0.87 nm. Dielectric constant and loss of MgTiO₃ thin films deposited by PLD were about 24 and 1.5% at 1MHz, respectively. These MgTiO₃ thin films also exhibited little dielectric dispersion.

Original language	English
Pages (from-to)	97-104
Number of pages	8
Journal	Integrated Ferroelectrics
Volume	31
Issue number	1-4
DOIs	https://doi.org/10.1080/10584580008215644
State	Published - 2000
Event	12th International Symposium on Integrated Ferroelectrics - Aachen, Germany Duration: 12 Mar 2000 → 15 Mar 2000

Keywords

MgTiO
Microwave
Pulsed laser deposition
Thin films

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10.1080/10584580008215644

Cite this

@article{bcb290cc4cfd476eb78f7c164302b46d,

title = "Growth of MgTiO3 thin films by pulsed laser deposition and their electrical properties",

abstract = "MgTiO3 thin films have been grown on various substrates by pulsed laser deposition (PLD) to investigate the application for microwave dielectrics and optical devices. Highly oriented MgTiO3 thin films were obtained on sapphire (c-plane Al2O3). MgTiO3 thin films deposited on SiO2/Si and platinized silicon (Pt/Ti/SiO2/Si) substrates were polycrystalline nature MgTiO3 thin films grown on sapphire were transparent in the visible and had a sharp absorption edge at 280 nm. These MgTiO3 thin films had extremely fine feature of surface morphology, i.e., rms roughness of 0.87 nm. Dielectric constant and loss of MgTiO3 thin films deposited by PLD were about 24 and 1.5\% at 1MHz, respectively. These MgTiO3 thin films also exhibited little dielectric dispersion.",

keywords = "MgTiO, Microwave, Pulsed laser deposition, Thin films",

author = "S. Kang and W. Lim and J. Lee",

year = "2000",

doi = "10.1080/10584580008215644",

language = "English",

volume = "31",

pages = "97--104",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1-4",

note = "12th International Symposium on Integrated Ferroelectrics ; Conference date: 12-03-2000 Through 15-03-2000",

}

TY - JOUR

T1 - Growth of MgTiO3 thin films by pulsed laser deposition and their electrical properties

AU - Kang, S.

AU - Lim, W.

AU - Lee, J.

PY - 2000

Y1 - 2000

N2 - MgTiO3 thin films have been grown on various substrates by pulsed laser deposition (PLD) to investigate the application for microwave dielectrics and optical devices. Highly oriented MgTiO3 thin films were obtained on sapphire (c-plane Al2O3). MgTiO3 thin films deposited on SiO2/Si and platinized silicon (Pt/Ti/SiO2/Si) substrates were polycrystalline nature MgTiO3 thin films grown on sapphire were transparent in the visible and had a sharp absorption edge at 280 nm. These MgTiO3 thin films had extremely fine feature of surface morphology, i.e., rms roughness of 0.87 nm. Dielectric constant and loss of MgTiO3 thin films deposited by PLD were about 24 and 1.5% at 1MHz, respectively. These MgTiO3 thin films also exhibited little dielectric dispersion.

AB - MgTiO3 thin films have been grown on various substrates by pulsed laser deposition (PLD) to investigate the application for microwave dielectrics and optical devices. Highly oriented MgTiO3 thin films were obtained on sapphire (c-plane Al2O3). MgTiO3 thin films deposited on SiO2/Si and platinized silicon (Pt/Ti/SiO2/Si) substrates were polycrystalline nature MgTiO3 thin films grown on sapphire were transparent in the visible and had a sharp absorption edge at 280 nm. These MgTiO3 thin films had extremely fine feature of surface morphology, i.e., rms roughness of 0.87 nm. Dielectric constant and loss of MgTiO3 thin films deposited by PLD were about 24 and 1.5% at 1MHz, respectively. These MgTiO3 thin films also exhibited little dielectric dispersion.

KW - MgTiO

KW - Microwave

KW - Pulsed laser deposition

KW - Thin films

UR - https://www.scopus.com/pages/publications/0034447930

U2 - 10.1080/10584580008215644

DO - 10.1080/10584580008215644

M3 - Conference article

AN - SCOPUS:0034447930

SN - 1058-4587

VL - 31

SP - 97

EP - 104

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

T2 - 12th International Symposium on Integrated Ferroelectrics

Y2 - 12 March 2000 through 15 March 2000

ER -

Growth of MgTiO₃ thin films by pulsed laser deposition and their electrical properties

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Keywords

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