Growth of homoepitaxial Ge(001)2 × 1 by ultrahigh vacuum ion beam sputter deposition
- G. A. Tomasch
- , Y. W. Kim
- , L. C. Markert
- , N. E. Lee
- , J. E. Greene
- University of Illinois at Urbana-Champaign
Research output: Contribution to journal › Article › peer-review
14
Link opens in a new tab
Scopus
citations