Growth of homoepitaxial Ge(001)2 × 1 by ultrahigh vacuum ion beam sputter deposition

G. A. Tomasch; Y. W. Kim; L. C. Markert; N. E. Lee; J. E. Greene

doi:10.1016/0040-6090(93)90523-R

Growth of homoepitaxial Ge(001)2 × 1 by ultrahigh vacuum ion beam sputter deposition

G. A. Tomasch, Y. W. Kim, L. C. Markert, N. E. Lee, J. E. Greene

University of Illinois at Urbana-Champaign

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

High quality epitaxial Ge(001)2 × 1 films have been grown on Ge(001) substrates by ultrahigh vacuum (UHV) ion beam sputter deposition. The load-locked multichamber growth system is equipped with in situ reflection high-energy electron diffraction. Sputter deposition was carried out using a 1 keV Kr⁺ ion beam generated by a modified UHV Kaufman-type ion source with post-extraction electrostatic ion optics. All films were 1 microm thick and deposited at a rate of 0.5 microm h^-1. Results of plan-view, cross-sectional, and convergent-beam transmission electron microscopy analyses showed that films deposited at temperatures T_s between 300 and 650°C had a high degree of perfection with no observable defects. Temperature-dependent carrier mobilities were found to be equal to or to exceed the best reported values for bulk Ge. A1-doped p-type films grown at T_s = 400-600°C exhibited 77 K hole mobilities ranging from 3890 to 1200 cm² V^-1 s^-1 for corresponding hole concentrations between 2.8 × 10¹⁶ and 1.5 × 10¹⁷ cm^-3.

Original language	English
Pages (from-to)	212-217
Number of pages	6
Journal	Thin Solid Films
Volume	223
Issue number	2
DOIs	https://doi.org/10.1016/0040-6090(93)90523-R
State	Published - 15 Feb 1993
Externally published	Yes

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@article{ff37140f83a447bbac900061ce5e7500,

title = "Growth of homoepitaxial Ge(001)2 × 1 by ultrahigh vacuum ion beam sputter deposition",

abstract = "High quality epitaxial Ge(001)2 × 1 films have been grown on Ge(001) substrates by ultrahigh vacuum (UHV) ion beam sputter deposition. The load-locked multichamber growth system is equipped with in situ reflection high-energy electron diffraction. Sputter deposition was carried out using a 1 keV Kr+ ion beam generated by a modified UHV Kaufman-type ion source with post-extraction electrostatic ion optics. All films were 1 microm thick and deposited at a rate of 0.5 microm h-1. Results of plan-view, cross-sectional, and convergent-beam transmission electron microscopy analyses showed that films deposited at temperatures Ts between 300 and 650°C had a high degree of perfection with no observable defects. Temperature-dependent carrier mobilities were found to be equal to or to exceed the best reported values for bulk Ge. A1-doped p-type films grown at Ts = 400-600°C exhibited 77 K hole mobilities ranging from 3890 to 1200 cm2 V-1 s-1 for corresponding hole concentrations between 2.8 × 1016 and 1.5 × 1017 cm-3.",

author = "Tomasch, \{G. A.\} and Kim, \{Y. W.\} and Markert, \{L. C.\} and Lee, \{N. E.\} and Greene, \{J. E.\}",

year = "1993",

month = feb,

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doi = "10.1016/0040-6090(93)90523-R",

language = "English",

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pages = "212--217",

journal = "Thin Solid Films",

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T1 - Growth of homoepitaxial Ge(001)2 × 1 by ultrahigh vacuum ion beam sputter deposition

AU - Tomasch, G. A.

AU - Kim, Y. W.

AU - Markert, L. C.

AU - Lee, N. E.

AU - Greene, J. E.

PY - 1993/2/15

Y1 - 1993/2/15

N2 - High quality epitaxial Ge(001)2 × 1 films have been grown on Ge(001) substrates by ultrahigh vacuum (UHV) ion beam sputter deposition. The load-locked multichamber growth system is equipped with in situ reflection high-energy electron diffraction. Sputter deposition was carried out using a 1 keV Kr+ ion beam generated by a modified UHV Kaufman-type ion source with post-extraction electrostatic ion optics. All films were 1 microm thick and deposited at a rate of 0.5 microm h-1. Results of plan-view, cross-sectional, and convergent-beam transmission electron microscopy analyses showed that films deposited at temperatures Ts between 300 and 650°C had a high degree of perfection with no observable defects. Temperature-dependent carrier mobilities were found to be equal to or to exceed the best reported values for bulk Ge. A1-doped p-type films grown at Ts = 400-600°C exhibited 77 K hole mobilities ranging from 3890 to 1200 cm2 V-1 s-1 for corresponding hole concentrations between 2.8 × 1016 and 1.5 × 1017 cm-3.

AB - High quality epitaxial Ge(001)2 × 1 films have been grown on Ge(001) substrates by ultrahigh vacuum (UHV) ion beam sputter deposition. The load-locked multichamber growth system is equipped with in situ reflection high-energy electron diffraction. Sputter deposition was carried out using a 1 keV Kr+ ion beam generated by a modified UHV Kaufman-type ion source with post-extraction electrostatic ion optics. All films were 1 microm thick and deposited at a rate of 0.5 microm h-1. Results of plan-view, cross-sectional, and convergent-beam transmission electron microscopy analyses showed that films deposited at temperatures Ts between 300 and 650°C had a high degree of perfection with no observable defects. Temperature-dependent carrier mobilities were found to be equal to or to exceed the best reported values for bulk Ge. A1-doped p-type films grown at Ts = 400-600°C exhibited 77 K hole mobilities ranging from 3890 to 1200 cm2 V-1 s-1 for corresponding hole concentrations between 2.8 × 1016 and 1.5 × 1017 cm-3.

UR - https://www.scopus.com/pages/publications/0027543489

U2 - 10.1016/0040-6090(93)90523-R

DO - 10.1016/0040-6090(93)90523-R

M3 - Article

AN - SCOPUS:0027543489

SN - 0040-6090

VL - 223

SP - 212

EP - 217

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2

ER -

Growth of homoepitaxial Ge(001)2 × 1 by ultrahigh vacuum ion beam sputter deposition

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