Growth of cubic SiC thin films on silicon from single source precursors by supersonic jet epitaxy

Jin Hyo Boo; Scott A. Ustin; Wilson Ho; H. Paul Maruska; Peter E. Norris; Ig Hyeon Kim; Changmo Sung

Growth of cubic SiC thin films on silicon from single source precursors by supersonic jet epitaxy

Jin Hyo Boo
, Scott A. Ustin
, Wilson Ho
, H. Paul Maruska
, Peter E. Norris
, Ig Hyeon Kim
, Changmo Sung

Cornell University

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

Cubic SiC thin films have been grown by supersonic jet epitaxy of single molecular precursors on Si(100), Si(111) and Separation by IMplanted OXygen (SIMOX) silicon on insulator (SOI) substrates at temperatures in the range 780-1000 °C. Real-time, in situ optical reflectivity was used to monitor the film growth. Films were characterized by ellipsometry, x-ray diffraction (XRD), and transmission electron microscopy (TEM). Monocrystalline, crack-free epitaxial cubic SiC thin films were successfully grown at 830 °C on carbonized Si(111) substrates using supersonic molecular jets of dimethylisopropylsilane, (CH₃)₂CHSiH(CH₃)₂, and diethylmethylsilane, (CH₃CH₂)₂SiHCH₃. Highly oriented cubic SiC thin films in the [100] direction were obtained on SIMOX(100) at 900 °C with dimethylisopropylsilane and on Si(100) at 1000 °C with diethylmethylsilane. A carbonized Si(100) surface was found to enhance SiC deposition from diethylmethylsilane at a growth temperature of 950 °C.

Original language	English
Pages (from-to)	705-710
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	441
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 2 Dec 1996 → 6 Dec 1996

Cite this

@article{196519eefe6b4224af608e6d9f78df97,

title = "Growth of cubic SiC thin films on silicon from single source precursors by supersonic jet epitaxy",

abstract = "Cubic SiC thin films have been grown by supersonic jet epitaxy of single molecular precursors on Si(100), Si(111) and Separation by IMplanted OXygen (SIMOX) silicon on insulator (SOI) substrates at temperatures in the range 780-1000 °C. Real-time, in situ optical reflectivity was used to monitor the film growth. Films were characterized by ellipsometry, x-ray diffraction (XRD), and transmission electron microscopy (TEM). Monocrystalline, crack-free epitaxial cubic SiC thin films were successfully grown at 830 °C on carbonized Si(111) substrates using supersonic molecular jets of dimethylisopropylsilane, (CH3)2CHSiH(CH3)2, and diethylmethylsilane, (CH3CH2)2SiHCH3. Highly oriented cubic SiC thin films in the [100] direction were obtained on SIMOX(100) at 900 °C with dimethylisopropylsilane and on Si(100) at 1000 °C with diethylmethylsilane. A carbonized Si(100) surface was found to enhance SiC deposition from diethylmethylsilane at a growth temperature of 950 °C.",

author = "Boo, \{Jin Hyo\} and Ustin, \{Scott A.\} and Wilson Ho and Maruska, \{H. Paul\} and Norris, \{Peter E.\} and Kim, \{Ig Hyeon\} and Changmo Sung",

year = "1997",

language = "English",

volume = "441",

pages = "705--710",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 06-12-1996",

}

TY - JOUR

T1 - Growth of cubic SiC thin films on silicon from single source precursors by supersonic jet epitaxy

AU - Boo, Jin Hyo

AU - Ustin, Scott A.

AU - Ho, Wilson

AU - Maruska, H. Paul

AU - Norris, Peter E.

AU - Kim, Ig Hyeon

AU - Sung, Changmo

PY - 1997

Y1 - 1997

N2 - Cubic SiC thin films have been grown by supersonic jet epitaxy of single molecular precursors on Si(100), Si(111) and Separation by IMplanted OXygen (SIMOX) silicon on insulator (SOI) substrates at temperatures in the range 780-1000 °C. Real-time, in situ optical reflectivity was used to monitor the film growth. Films were characterized by ellipsometry, x-ray diffraction (XRD), and transmission electron microscopy (TEM). Monocrystalline, crack-free epitaxial cubic SiC thin films were successfully grown at 830 °C on carbonized Si(111) substrates using supersonic molecular jets of dimethylisopropylsilane, (CH3)2CHSiH(CH3)2, and diethylmethylsilane, (CH3CH2)2SiHCH3. Highly oriented cubic SiC thin films in the [100] direction were obtained on SIMOX(100) at 900 °C with dimethylisopropylsilane and on Si(100) at 1000 °C with diethylmethylsilane. A carbonized Si(100) surface was found to enhance SiC deposition from diethylmethylsilane at a growth temperature of 950 °C.

AB - Cubic SiC thin films have been grown by supersonic jet epitaxy of single molecular precursors on Si(100), Si(111) and Separation by IMplanted OXygen (SIMOX) silicon on insulator (SOI) substrates at temperatures in the range 780-1000 °C. Real-time, in situ optical reflectivity was used to monitor the film growth. Films were characterized by ellipsometry, x-ray diffraction (XRD), and transmission electron microscopy (TEM). Monocrystalline, crack-free epitaxial cubic SiC thin films were successfully grown at 830 °C on carbonized Si(111) substrates using supersonic molecular jets of dimethylisopropylsilane, (CH3)2CHSiH(CH3)2, and diethylmethylsilane, (CH3CH2)2SiHCH3. Highly oriented cubic SiC thin films in the [100] direction were obtained on SIMOX(100) at 900 °C with dimethylisopropylsilane and on Si(100) at 1000 °C with diethylmethylsilane. A carbonized Si(100) surface was found to enhance SiC deposition from diethylmethylsilane at a growth temperature of 950 °C.

UR - https://www.scopus.com/pages/publications/0030687114

M3 - Conference article

AN - SCOPUS:0030687114

SN - 0272-9172

VL - 441

SP - 705

EP - 710

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

Growth of cubic SiC thin films on silicon from single source precursors by supersonic jet epitaxy

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