Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure

J. H. Boo; D. C. Lim; S. B. Lee; K. W. Lee; M. M. Sung; Y. Kim; K. S. Yu

doi:10.1116/1.1585073

Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure

J. H. Boo, D. C. Lim, S. B. Lee, K. W. Lee, M. M. Sung, Y. Kim, K. S. Yu

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Original language	English
Pages (from-to)	1870-1875
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	4
DOIs	https://doi.org/10.1116/1.1585073
State	Published - 2003

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10.1116/1.1585073

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Boo, J. H., Lim, D. C., Lee, S. B., Lee, K. W., Sung, M. M., Kim, Y., & Yu, K. S. (2003). Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21(4), 1870-1875. https://doi.org/10.1116/1.1585073

@article{00ca8dd2d97a43f391fef6a420f93c27,

title = "Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure",

author = "Boo, \{J. H.\} and Lim, \{D. C.\} and Lee, \{S. B.\} and Lee, \{K. W.\} and Sung, \{M. M.\} and Y. Kim and Yu, \{K. S.\}",

year = "2003",

doi = "10.1116/1.1585073",

language = "English",

volume = "21",

pages = "1870--1875",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

}

Boo, JH, Lim, DC, Lee, SB, Lee, KW, Sung, MM, Kim, Y & Yu, KS 2003, 'Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 21, no. 4, pp. 1870-1875. https://doi.org/10.1116/1.1585073

Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure. / Boo, J. H.; Lim, D. C.; Lee, S. B. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 4, 2003, p. 1870-1875.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure

AU - Boo, J. H.

AU - Lim, D. C.

AU - Lee, S. B.

AU - Lee, K. W.

AU - Sung, M. M.

AU - Kim, Y.

AU - Yu, K. S.

PY - 2003

Y1 - 2003

UR - https://www.scopus.com/pages/publications/0141458036

U2 - 10.1116/1.1585073

DO - 10.1116/1.1585073

M3 - Article

AN - SCOPUS:0141458036

SN - 1071-1023

VL - 21

SP - 1870

EP - 1875

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure

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