Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure

J. H. Boo; D. C. Lim; S. B. Lee; K. W. Lee; M. M. Sung; Y. Kim; K. S. Yu

doi:10.1116/1.1585073

Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure

J. H. Boo
, D. C. Lim
, S. B. Lee
, K. W. Lee
, M. M. Sung
, Y. Kim
, K. S. Yu

Department of Chemistry

Sungkyunkwan University
Korea Research Institute of Chemical Technology
Korea Mat./Analysis (K-MAC) Co. Ltd.

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Original language	English
Pages (from-to)	1870-1875
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	4
DOIs	https://doi.org/10.1116/1.1585073
State	Published - 2003

Access to Document

10.1116/1.1585073

Cite this

Boo, J. H., Lim, D. C., Lee, S. B., Lee, K. W., Sung, M. M., Kim, Y., & Yu, K. S. (2003). Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21(4), 1870-1875. https://doi.org/10.1116/1.1585073

@article{00ca8dd2d97a43f391fef6a420f93c27,

title = "Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure",

author = "Boo, \{J. H.\} and Lim, \{D. C.\} and Lee, \{S. B.\} and Lee, \{K. W.\} and Sung, \{M. M.\} and Y. Kim and Yu, \{K. S.\}",

year = "2003",

doi = "10.1116/1.1585073",

language = "English",

volume = "21",

pages = "1870--1875",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

}

Boo, JH, Lim, DC, Lee, SB, Lee, KW, Sung, MM, Kim, Y & Yu, KS 2003, 'Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 21, no. 4, pp. 1870-1875. https://doi.org/10.1116/1.1585073

Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure. / Boo, J. H.; Lim, D. C.; Lee, S. B. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 4, 2003, p. 1870-1875.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure

AU - Boo, J. H.

AU - Lim, D. C.

AU - Lee, S. B.

AU - Lee, K. W.

AU - Sung, M. M.

AU - Kim, Y.

AU - Yu, K. S.

PY - 2003

Y1 - 2003

UR - https://www.scopus.com/pages/publications/0141458036

U2 - 10.1116/1.1585073

DO - 10.1116/1.1585073

M3 - Article

AN - SCOPUS:0141458036

SN - 1071-1023

VL - 21

SP - 1870

EP - 1875

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure

Access to Document

Other files and links

Cite this