Growth of Cubic SiC Films Using 1,3-Disilabutane

Cubic SiC films have been grown on the Si(100) and Si(111) substrates in the temperature range 650-900 °C by low-pressure organometallic chemical vapor deposition (LP-OMCVD) using 1,3-disilabutane, H₃SiCH₂SiH₂CH₃, as a single molecular precursor. Polycrystalline cubic SiC films were formed on Si(100) substrates at such a low temperature as 650 °C. The films obtained on carbonized Si(100) substrates at temperatures higher than 850 °C show improved crystallinity in their X-ray diffraction patterns. On the other hand, highly oriented SiC films in the [111] direction were formed on carbonized Si(111) substrates at 900 °C. The growth temperatures in this study are much lower than those previously reported, and this is the first report of cubic SiC films grown using 1,3-disilabutane.