Growth of carbon nanotubes by atmospheric pressure plasma enhanced chemical vapor deposition using NiCr catalyst

Se Jin Kyung; Maksym Voronko; Yong Hyuk Lee; Chan Woo Kim; June Hee Lee; Geun Young Yeom

doi:10.1016/j.surfcoat.2006.07.191

Growth of carbon nanotubes by atmospheric pressure plasma enhanced chemical vapor deposition using NiCr catalyst

Se Jin Kyung, Maksym Voronko, Yong Hyuk Lee, Chan Woo Kim, June Hee Lee, Geun Young Yeom

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Carbon nanotubes (CNTs) were grown as a function of NiCr thickness using a modified atmospheric pressure plasma containing NH₃(210 sccm)/N₂(100 sccm)/C₂ H₂(150 sccm)/He(8 slm) at low substrate temperatures (≤ 500 °C), and their physical and electrical characteristics were investigated for possible applications to field emission devices. The number of defects in the grown CNTs was decreased with increasing substrate temperature and the highest CNT growth rate of 1.0 μm/min was obtained at 500 °C with 10 nm thick NiCr. The turn-on electric fields of the CNTs grown at 450 and 500 °C with 10 nm thick NiCr were 2.6 V/μm and 3.7 V/μm, respectively.

Original language	English
Pages (from-to)	5378-5382
Number of pages	5
Journal	Surface and Coatings Technology
Volume	201
Issue number	9-11 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.surfcoat.2006.07.191
State	Published - 26 Feb 2007

Keywords

Carbon nanotubes(CNTs)
Field emission
PECVD

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10.1016/j.surfcoat.2006.07.191

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title = "Growth of carbon nanotubes by atmospheric pressure plasma enhanced chemical vapor deposition using NiCr catalyst",

abstract = "Carbon nanotubes (CNTs) were grown as a function of NiCr thickness using a modified atmospheric pressure plasma containing NH3(210 sccm)/N2(100 sccm)/C2 H2(150 sccm)/He(8 slm) at low substrate temperatures (≤ 500 °C), and their physical and electrical characteristics were investigated for possible applications to field emission devices. The number of defects in the grown CNTs was decreased with increasing substrate temperature and the highest CNT growth rate of 1.0 μm/min was obtained at 500 °C with 10 nm thick NiCr. The turn-on electric fields of the CNTs grown at 450 and 500 °C with 10 nm thick NiCr were 2.6 V/μm and 3.7 V/μm, respectively.",

keywords = "Carbon nanotubes(CNTs), Field emission, PECVD",

author = "Kyung, \{Se Jin\} and Maksym Voronko and Lee, \{Yong Hyuk\} and Kim, \{Chan Woo\} and Lee, \{June Hee\} and Yeom, \{Geun Young\}",

year = "2007",

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doi = "10.1016/j.surfcoat.2006.07.191",

language = "English",

volume = "201",

pages = "5378--5382",

journal = "Surface and Coatings Technology",

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number = "9-11 SPEC. ISS.",

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TY - JOUR

T1 - Growth of carbon nanotubes by atmospheric pressure plasma enhanced chemical vapor deposition using NiCr catalyst

AU - Kyung, Se Jin

AU - Voronko, Maksym

AU - Lee, Yong Hyuk

AU - Kim, Chan Woo

AU - Lee, June Hee

AU - Yeom, Geun Young

PY - 2007/2/26

Y1 - 2007/2/26

N2 - Carbon nanotubes (CNTs) were grown as a function of NiCr thickness using a modified atmospheric pressure plasma containing NH3(210 sccm)/N2(100 sccm)/C2 H2(150 sccm)/He(8 slm) at low substrate temperatures (≤ 500 °C), and their physical and electrical characteristics were investigated for possible applications to field emission devices. The number of defects in the grown CNTs was decreased with increasing substrate temperature and the highest CNT growth rate of 1.0 μm/min was obtained at 500 °C with 10 nm thick NiCr. The turn-on electric fields of the CNTs grown at 450 and 500 °C with 10 nm thick NiCr were 2.6 V/μm and 3.7 V/μm, respectively.

AB - Carbon nanotubes (CNTs) were grown as a function of NiCr thickness using a modified atmospheric pressure plasma containing NH3(210 sccm)/N2(100 sccm)/C2 H2(150 sccm)/He(8 slm) at low substrate temperatures (≤ 500 °C), and their physical and electrical characteristics were investigated for possible applications to field emission devices. The number of defects in the grown CNTs was decreased with increasing substrate temperature and the highest CNT growth rate of 1.0 μm/min was obtained at 500 °C with 10 nm thick NiCr. The turn-on electric fields of the CNTs grown at 450 and 500 °C with 10 nm thick NiCr were 2.6 V/μm and 3.7 V/μm, respectively.

KW - Carbon nanotubes(CNTs)

KW - Field emission

KW - PECVD

UR - https://www.scopus.com/pages/publications/33846622958

U2 - 10.1016/j.surfcoat.2006.07.191

DO - 10.1016/j.surfcoat.2006.07.191

M3 - Article

AN - SCOPUS:33846622958

SN - 0257-8972

VL - 201

SP - 5378

EP - 5382

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 9-11 SPEC. ISS.

ER -

Growth of carbon nanotubes by atmospheric pressure plasma enhanced chemical vapor deposition using NiCr catalyst

Abstract

Keywords

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