Growth of AlN and GaN thin films on Si(100) using new single molecular precursors by MOCVD method

Thin films of hexagonal AlN and GaN have been deposited on Si(100) substrates by MOCVD in the temperature range of 650 to 850 °C using cyclic diethylaluminum amide (DEAA), bis[diethyl(t-butylamido)aluminum] (DETBAA), cyclic dimethylgallium amide (DMGA), and bis[diethyl(t-butylamido)gallium] (DETBAG), as new single molecular precursors. On Si(100) at temperatures as low as 750 °C, strong preferential growth of hexagonal GAN(0002) thin films were successfully grown from DMGA without carrier gas. In the case of AlN film growth, however, only polycrystalline h-AlN thin films were obtained at temperatures above 750 °C using the precursors of DEAA and DETBAA. The XP spectra of all deposited AlN and GaN films are indistinguishable from that of AlN and GaN powders, and the Auger depth profile confirms that the films are stoichiometric and do not contain an appreciable amount of carbon. This is the first report on the growth of the h-GaN films from the synthesized precursors of DMGA and DETBAG, and we investigated their physical properties by nuclear magnetic resonance (NMR), thermogravimetric analysis (TGA), and gas chromatography (GC).