Growth of Al-doped ZnO thin films by pulsed DC magnetron sputtering

Hyungduk Ko; Weon Pil Tai; Ki Chul Kim; Sang Hyeob Kim; Su Jeong Suh; Young Sung Kim

doi:10.1016/j.jcrysgro.2005.01.061

Growth of Al-doped ZnO thin films by pulsed DC magnetron sputtering

Hyungduk Ko, Weon Pil Tai, Ki Chul Kim, Sang Hyeob Kim, Su Jeong Suh, Young Sung Kim

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

99 Scopus citations

Abstract

Transparent and conductive Al-doped zinc oxide (AZO) thin films are deposited on glass substrate by pulsed DC magnetron sputtering and the effect of pulse frequency on the structural, electrical and optical properties of the films are investigated. A highly c-axis-oriented AZO thin film is grown perpendicular to the substrate when a pulse frequency of 30 kHz is applied. Under the optimal growth condition, the AZO thin films exhibited the lowest resistivity value of 7.40×10^-4 Ω cm and the smoothest surface roughness of R_m=3.25 nm. This indicates that the decreased resistivity of films results from the improvement of crystallinity and surface roughness. The optical transmittance spectra of the films show a very high transmittance of 85-90% in the visible range and exhibit the absorption edge of about 350 nm.

Original language	English
Pages (from-to)	352-358
Number of pages	7
Journal	Journal of Crystal Growth
Volume	277
Issue number	1-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.01.061
State	Published - 15 Apr 2005

Keywords

A1. Optical properties
A3. Pulsed DC magnetron sputter
B1. Al-doped ZnO

Access to Document

10.1016/j.jcrysgro.2005.01.061

Cite this

@article{031febc5554944f78d9b624d50e46482,

title = "Growth of Al-doped ZnO thin films by pulsed DC magnetron sputtering",

abstract = "Transparent and conductive Al-doped zinc oxide (AZO) thin films are deposited on glass substrate by pulsed DC magnetron sputtering and the effect of pulse frequency on the structural, electrical and optical properties of the films are investigated. A highly c-axis-oriented AZO thin film is grown perpendicular to the substrate when a pulse frequency of 30 kHz is applied. Under the optimal growth condition, the AZO thin films exhibited the lowest resistivity value of 7.40×10-4 Ω cm and the smoothest surface roughness of Rm=3.25 nm. This indicates that the decreased resistivity of films results from the improvement of crystallinity and surface roughness. The optical transmittance spectra of the films show a very high transmittance of 85-90\% in the visible range and exhibit the absorption edge of about 350 nm.",

keywords = "A1. Optical properties, A3. Pulsed DC magnetron sputter, B1. Al-doped ZnO",

author = "Hyungduk Ko and Tai, \{Weon Pil\} and Kim, \{Ki Chul\} and Kim, \{Sang Hyeob\} and Suh, \{Su Jeong\} and Kim, \{Young Sung\}",

year = "2005",

month = apr,

day = "15",

doi = "10.1016/j.jcrysgro.2005.01.061",

language = "English",

volume = "277",

pages = "352--358",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Growth of Al-doped ZnO thin films by pulsed DC magnetron sputtering

AU - Ko, Hyungduk

AU - Tai, Weon Pil

AU - Kim, Ki Chul

AU - Kim, Sang Hyeob

AU - Suh, Su Jeong

AU - Kim, Young Sung

PY - 2005/4/15

Y1 - 2005/4/15

N2 - Transparent and conductive Al-doped zinc oxide (AZO) thin films are deposited on glass substrate by pulsed DC magnetron sputtering and the effect of pulse frequency on the structural, electrical and optical properties of the films are investigated. A highly c-axis-oriented AZO thin film is grown perpendicular to the substrate when a pulse frequency of 30 kHz is applied. Under the optimal growth condition, the AZO thin films exhibited the lowest resistivity value of 7.40×10-4 Ω cm and the smoothest surface roughness of Rm=3.25 nm. This indicates that the decreased resistivity of films results from the improvement of crystallinity and surface roughness. The optical transmittance spectra of the films show a very high transmittance of 85-90% in the visible range and exhibit the absorption edge of about 350 nm.

AB - Transparent and conductive Al-doped zinc oxide (AZO) thin films are deposited on glass substrate by pulsed DC magnetron sputtering and the effect of pulse frequency on the structural, electrical and optical properties of the films are investigated. A highly c-axis-oriented AZO thin film is grown perpendicular to the substrate when a pulse frequency of 30 kHz is applied. Under the optimal growth condition, the AZO thin films exhibited the lowest resistivity value of 7.40×10-4 Ω cm and the smoothest surface roughness of Rm=3.25 nm. This indicates that the decreased resistivity of films results from the improvement of crystallinity and surface roughness. The optical transmittance spectra of the films show a very high transmittance of 85-90% in the visible range and exhibit the absorption edge of about 350 nm.

KW - A1. Optical properties

KW - A3. Pulsed DC magnetron sputter

KW - B1. Al-doped ZnO

UR - https://www.scopus.com/pages/publications/15844366596

U2 - 10.1016/j.jcrysgro.2005.01.061

DO - 10.1016/j.jcrysgro.2005.01.061

M3 - Article

AN - SCOPUS:15844366596

SN - 0022-0248

VL - 277

SP - 352

EP - 358

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Growth of Al-doped ZnO thin films by pulsed DC magnetron sputtering

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this