Growth of a new ternary BON crystal on Si(100) by plasma-assisted MOCVD and study on the effects of fed gas and growth temperature

G. C. Chen; S. B. Lee; J. H. Boo

doi:10.1142/S0218625X03005475

Growth of a new ternary BON crystal on Si(100) by plasma-assisted MOCVD and study on the effects of fed gas and growth temperature

G. C. Chen, S. B. Lee, J. H. Boo

Department of Chemistry

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A new ternary BO_xN_y crystal was grown on Si(100) substrate at 500°C by low-frequency (100 kHz) radio-frequency (rf) derived plasma-assisted MOCVD with an organoborate precursor. The as-grown deposits were characterized by SEM, TED, XPS, XRD, AFM and FT-IR. The experimental results showed that BO_xN_y crystal was apt to be formed at N-rich atmosphere and high temperature. The decrease of hydrogen flux in fed gases was of benefit to form BON crystal structure. The crystal structure of BO_xN_y was as similar to that of H₃BO ₃ in this study.

Original language	English
Pages (from-to)	629-634
Number of pages	6
Journal	Surface Review and Letters
Volume	10
Issue number	4
DOIs	https://doi.org/10.1142/S0218625X03005475
State	Published - Aug 2003

Keywords

BON crystal
Organaborate precursor
Plasma-assisted MOCVD
Silicon substrate

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title = "Growth of a new ternary BON crystal on Si(100) by plasma-assisted MOCVD and study on the effects of fed gas and growth temperature",

abstract = "A new ternary BOxNy crystal was grown on Si(100) substrate at 500°C by low-frequency (100 kHz) radio-frequency (rf) derived plasma-assisted MOCVD with an organoborate precursor. The as-grown deposits were characterized by SEM, TED, XPS, XRD, AFM and FT-IR. The experimental results showed that BOxNy crystal was apt to be formed at N-rich atmosphere and high temperature. The decrease of hydrogen flux in fed gases was of benefit to form BON crystal structure. The crystal structure of BOxNy was as similar to that of H3BO 3 in this study.",

keywords = "BON crystal, Organaborate precursor, Plasma-assisted MOCVD, Silicon substrate",

author = "Chen, \{G. C.\} and Lee, \{S. B.\} and Boo, \{J. H.\}",

year = "2003",

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doi = "10.1142/S0218625X03005475",

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T1 - Growth of a new ternary BON crystal on Si(100) by plasma-assisted MOCVD and study on the effects of fed gas and growth temperature

AU - Chen, G. C.

AU - Lee, S. B.

AU - Boo, J. H.

PY - 2003/8

Y1 - 2003/8

N2 - A new ternary BOxNy crystal was grown on Si(100) substrate at 500°C by low-frequency (100 kHz) radio-frequency (rf) derived plasma-assisted MOCVD with an organoborate precursor. The as-grown deposits were characterized by SEM, TED, XPS, XRD, AFM and FT-IR. The experimental results showed that BOxNy crystal was apt to be formed at N-rich atmosphere and high temperature. The decrease of hydrogen flux in fed gases was of benefit to form BON crystal structure. The crystal structure of BOxNy was as similar to that of H3BO 3 in this study.

AB - A new ternary BOxNy crystal was grown on Si(100) substrate at 500°C by low-frequency (100 kHz) radio-frequency (rf) derived plasma-assisted MOCVD with an organoborate precursor. The as-grown deposits were characterized by SEM, TED, XPS, XRD, AFM and FT-IR. The experimental results showed that BOxNy crystal was apt to be formed at N-rich atmosphere and high temperature. The decrease of hydrogen flux in fed gases was of benefit to form BON crystal structure. The crystal structure of BOxNy was as similar to that of H3BO 3 in this study.

KW - BON crystal

KW - Organaborate precursor

KW - Plasma-assisted MOCVD

KW - Silicon substrate

UR - https://www.scopus.com/pages/publications/0041335447

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DO - 10.1142/S0218625X03005475

M3 - Article

AN - SCOPUS:0041335447

SN - 0218-625X

VL - 10

SP - 629

EP - 634

JO - Surface Review and Letters

JF - Surface Review and Letters

IS - 4

ER -

Growth of a new ternary BON crystal on Si(100) by plasma-assisted MOCVD and study on the effects of fed gas and growth temperature

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Keywords

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