TY - JOUR
T1 - Growth and characterization of ZnSxSe1-x films deposited by close-spaced evaporation
AU - Subbaiah, Y. P.Venkata
AU - Prathap, P.
AU - Reddy, K. T.R.
AU - Mangalaraj, D.
AU - Kim, K.
AU - Yi, Junsin
PY - 2007/6/21
Y1 - 2007/6/21
N2 - Polycrystalline thin films of ZnSxSe1-x with x ≤ 0, 0.25, 0.5, 0.75 and 1.0 have been synthesized using close-spaced evaporation. The films were deposited onto glass substrates at different substrate temperatures in the range 200-400 °C. The grown films were characterized using XRD, AFM, EDAX and UV-Vis-NIR spectrophotometer to determine the microstructural properties, composition and optical behaviour. All the ZnS xSe1-x films deposited between 275 and 300 °C were crystallized in cubic structure with a single peak that corresponds to the (1 1 1) plane as the preferred orientation. The composition analysis revealed that the films deposited at Ts ≤ 275-325 °C were nearly stoichiometric. The average surface roughness for ZnSxSe 1-x films deposited at 300 °C varied in the range 2-6 nm. The films were highly transparent with optical transmittance >85%. The evaluated energy band gap of the films increased with the increase of sulfur content in the layers and it varied in the range 2.61-3.60 eV. All the layers showed n-type electrical conductivity. The temperature dependence of conductivity was also studied and the activation energy values were evaluated.
AB - Polycrystalline thin films of ZnSxSe1-x with x ≤ 0, 0.25, 0.5, 0.75 and 1.0 have been synthesized using close-spaced evaporation. The films were deposited onto glass substrates at different substrate temperatures in the range 200-400 °C. The grown films were characterized using XRD, AFM, EDAX and UV-Vis-NIR spectrophotometer to determine the microstructural properties, composition and optical behaviour. All the ZnS xSe1-x films deposited between 275 and 300 °C were crystallized in cubic structure with a single peak that corresponds to the (1 1 1) plane as the preferred orientation. The composition analysis revealed that the films deposited at Ts ≤ 275-325 °C were nearly stoichiometric. The average surface roughness for ZnSxSe 1-x films deposited at 300 °C varied in the range 2-6 nm. The films were highly transparent with optical transmittance >85%. The evaluated energy band gap of the films increased with the increase of sulfur content in the layers and it varied in the range 2.61-3.60 eV. All the layers showed n-type electrical conductivity. The temperature dependence of conductivity was also studied and the activation energy values were evaluated.
UR - https://www.scopus.com/pages/publications/34547369097
U2 - 10.1088/0022-3727/40/12/021
DO - 10.1088/0022-3727/40/12/021
M3 - Article
AN - SCOPUS:34547369097
SN - 0022-3727
VL - 40
SP - 3683
EP - 3688
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
IS - 12
M1 - 021
ER -
