Growth and characteristics of (TbBi)3(FeAlGa)5O 12 and (EuBi)3(FeAlGa)5O12 garnet single crystal thick films

S. G. Yoon; G. Y. Kim; Y. T. Kim; M. J. Kim; Y. M. Im; D. H. Yoon

doi:10.1016/j.mseb.2003.08.014

Growth and characteristics of (TbBi)₃(FeAlGa)₅O ₁₂ and (EuBi)₃(FeAlGa)₅O₁₂ garnet single crystal thick films

S. G. Yoon
, G. Y. Kim
, Y. T. Kim
, M. J. Kim
, Y. M. Im
, D. H. Yoon

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The single crystalline thick films of (TbBi)₃(FeAlGa) ₅O₁₂ (TbIG) and (EuBi)₃(FeAlGa) ₅O₁₂ (EuIG) garnet single crystal thick films were grown on (GdCa)₃(GaMgZr)₅O₁₂ (SGGG) substrate by liquid phase epitaxy (LPE). The lattice constant and lattice mismatch of TbIG were 12.507Å and 118.8arcsec and those of EuIG were 12.489Å and 75.6arcsec (SGGG=12.496Å), respectively. The magnetic-domain could be observed in the EuIG film after the removal of the magnetic field. The Bi-substitution level of the TbIG films was increased as compared to the EuIG films. Also saturation magnetization of TbIG and EuIG films get 150 and 950Oe, respectively.

Original language	English
Pages (from-to)	48-52
Number of pages	5
Journal	Materials Science and Engineering B
Volume	105
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2003.08.014
State	Published - 15 Dec 2003
Event	EMRS 2003 Symposium J, Rare Earth Doped Materials for Photonic - Strasbourg, Austria Duration: 10 Jun 2003 → 13 Jun 2003

Keywords

EuIG
Faraday rotation
Garnet single crystal
Liquid phase epitaxy
TbIG

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10.1016/j.mseb.2003.08.014

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@article{89db268802724780b34b4756e294d7d1,

title = "Growth and characteristics of (TbBi)3(FeAlGa)5O 12 and (EuBi)3(FeAlGa)5O12 garnet single crystal thick films",

abstract = "The single crystalline thick films of (TbBi)3(FeAlGa) 5O12 (TbIG) and (EuBi)3(FeAlGa) 5O12 (EuIG) garnet single crystal thick films were grown on (GdCa)3(GaMgZr)5O12 (SGGG) substrate by liquid phase epitaxy (LPE). The lattice constant and lattice mismatch of TbIG were 12.507{\AA} and 118.8arcsec and those of EuIG were 12.489{\AA} and 75.6arcsec (SGGG=12.496{\AA}), respectively. The magnetic-domain could be observed in the EuIG film after the removal of the magnetic field. The Bi-substitution level of the TbIG films was increased as compared to the EuIG films. Also saturation magnetization of TbIG and EuIG films get 150 and 950Oe, respectively.",

keywords = "EuIG, Faraday rotation, Garnet single crystal, Liquid phase epitaxy, TbIG",

author = "Yoon, \{S. G.\} and Kim, \{G. Y.\} and Kim, \{Y. T.\} and Kim, \{M. J.\} and Im, \{Y. M.\} and Yoon, \{D. H.\}",

year = "2003",

month = dec,

day = "15",

doi = "10.1016/j.mseb.2003.08.014",

language = "English",

volume = "105",

pages = "48--52",

journal = "Materials Science and Engineering B",

issn = "0921-5107",

publisher = "Elsevier Ltd",

number = "1-3",

note = "EMRS 2003 Symposium J, Rare Earth Doped Materials for Photonic ; Conference date: 10-06-2003 Through 13-06-2003",

}

TY - JOUR

T1 - Growth and characteristics of (TbBi)3(FeAlGa)5O 12 and (EuBi)3(FeAlGa)5O12 garnet single crystal thick films

AU - Yoon, S. G.

AU - Kim, G. Y.

AU - Kim, Y. T.

AU - Kim, M. J.

AU - Im, Y. M.

AU - Yoon, D. H.

PY - 2003/12/15

Y1 - 2003/12/15

N2 - The single crystalline thick films of (TbBi)3(FeAlGa) 5O12 (TbIG) and (EuBi)3(FeAlGa) 5O12 (EuIG) garnet single crystal thick films were grown on (GdCa)3(GaMgZr)5O12 (SGGG) substrate by liquid phase epitaxy (LPE). The lattice constant and lattice mismatch of TbIG were 12.507Å and 118.8arcsec and those of EuIG were 12.489Å and 75.6arcsec (SGGG=12.496Å), respectively. The magnetic-domain could be observed in the EuIG film after the removal of the magnetic field. The Bi-substitution level of the TbIG films was increased as compared to the EuIG films. Also saturation magnetization of TbIG and EuIG films get 150 and 950Oe, respectively.

AB - The single crystalline thick films of (TbBi)3(FeAlGa) 5O12 (TbIG) and (EuBi)3(FeAlGa) 5O12 (EuIG) garnet single crystal thick films were grown on (GdCa)3(GaMgZr)5O12 (SGGG) substrate by liquid phase epitaxy (LPE). The lattice constant and lattice mismatch of TbIG were 12.507Å and 118.8arcsec and those of EuIG were 12.489Å and 75.6arcsec (SGGG=12.496Å), respectively. The magnetic-domain could be observed in the EuIG film after the removal of the magnetic field. The Bi-substitution level of the TbIG films was increased as compared to the EuIG films. Also saturation magnetization of TbIG and EuIG films get 150 and 950Oe, respectively.

KW - EuIG

KW - Faraday rotation

KW - Garnet single crystal

KW - Liquid phase epitaxy

KW - TbIG

UR - https://www.scopus.com/pages/publications/0344876168

U2 - 10.1016/j.mseb.2003.08.014

DO - 10.1016/j.mseb.2003.08.014

M3 - Conference article

AN - SCOPUS:0344876168

SN - 0921-5107

VL - 105

SP - 48

EP - 52

JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

IS - 1-3

T2 - EMRS 2003 Symposium J, Rare Earth Doped Materials for Photonic

Y2 - 10 June 2003 through 13 June 2003

ER -

Growth and characteristics of (TbBi)₃(FeAlGa)₅O ₁₂ and (EuBi)₃(FeAlGa)₅O₁₂ garnet single crystal thick films

Abstract

Keywords

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