Grain boundary Josephson junctions created by bi-epitaxial processes

K. Char; M. S. Colclough; L. P. Lee; G. Zaharchuk

doi:10.1016/0921-4534(91)91404-R

Grain boundary Josephson junctions created by bi-epitaxial processes

K. Char
, M. S. Colclough
, L. P. Lee
, G. Zaharchuk

Conductus, Inc.

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We describe a "bi-epitaxial" process to create 45 degree grain boundary Josephson junctions in YBa₂Cu₃O₇. These bi-epitaxial grain boundary Josephson junctions are defined by standard photolithographic technique, and appear to be readily extended to integrated circuits. Some transport properties are reported and compared to other types of grain boundary Josephson junctions.

Original language	English
Pages (from-to)	2561-2562
Number of pages	2
Journal	Physica C: Superconductivity and its Applications
Volume	185-189
Issue number	PART 4
DOIs	https://doi.org/10.1016/0921-4534(91)91404-R
State	Published - 1 Dec 1991
Externally published	Yes

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10.1016/0921-4534(91)91404-R

Cite this

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title = "Grain boundary Josephson junctions created by bi-epitaxial processes",

abstract = "We describe a {"}bi-epitaxial{"} process to create 45 degree grain boundary Josephson junctions in YBa2Cu3O7. These bi-epitaxial grain boundary Josephson junctions are defined by standard photolithographic technique, and appear to be readily extended to integrated circuits. Some transport properties are reported and compared to other types of grain boundary Josephson junctions.",

author = "K. Char and Colclough, \{M. S.\} and Lee, \{L. P.\} and G. Zaharchuk",

year = "1991",

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doi = "10.1016/0921-4534(91)91404-R",

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T1 - Grain boundary Josephson junctions created by bi-epitaxial processes

AU - Char, K.

AU - Colclough, M. S.

AU - Lee, L. P.

AU - Zaharchuk, G.

PY - 1991/12/1

Y1 - 1991/12/1

N2 - We describe a "bi-epitaxial" process to create 45 degree grain boundary Josephson junctions in YBa2Cu3O7. These bi-epitaxial grain boundary Josephson junctions are defined by standard photolithographic technique, and appear to be readily extended to integrated circuits. Some transport properties are reported and compared to other types of grain boundary Josephson junctions.

AB - We describe a "bi-epitaxial" process to create 45 degree grain boundary Josephson junctions in YBa2Cu3O7. These bi-epitaxial grain boundary Josephson junctions are defined by standard photolithographic technique, and appear to be readily extended to integrated circuits. Some transport properties are reported and compared to other types of grain boundary Josephson junctions.

UR - https://www.scopus.com/pages/publications/0026398317

U2 - 10.1016/0921-4534(91)91404-R

DO - 10.1016/0921-4534(91)91404-R

M3 - Article

AN - SCOPUS:0026398317

SN - 0921-4534

VL - 185-189

SP - 2561

EP - 2562

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

IS - PART 4

ER -

Grain boundary Josephson junctions created by bi-epitaxial processes

Abstract

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