Geometrically designed amorphous oxide semiconductor heterojunction thin-film transistors for enhanced electrical performance and stability

Sunghyun Park; Boyeon Park; Woojong Kim; Kunsang Yoo; Yong Hoon Kim

doi:10.35848/1882-0786/ad0654

Geometrically designed amorphous oxide semiconductor heterojunction thin-film transistors for enhanced electrical performance and stability

Sunghyun Park, Boyeon Park, Woojong Kim, Kunsang Yoo, Yong Hoon Kim

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report the geometrical design of indium-zinc-tin-oxide/zinc-tin-oxide (IZTO/TZO) heterojunction thin-film transistors (TFTs) to achieve high electrical performance and stability. The coverage ratio of the IZTO front-channel-layer (FCL) in the channel region was varied to investigate its impact on electrical properties such as field-effect mobility and bias stability. We observed that with a 90% coverage ratio of IZTO FCL, the mobility increased from 15.9 cm² Vs⁻¹ to 20.4 cm² Vs⁻¹, with a suppressed threshold voltage (V _th) shift. The IZTO/ZTO TFTs exhibited improved positive gate-bias stability showing a V _th shift of +2.46 V. The band bending occurring at the heterointerface is attributed to the enhanced electrical performance.

Original language	English
Article number	111002
Journal	Applied Physics Express
Volume	16
Issue number	11
DOIs	https://doi.org/10.35848/1882-0786/ad0654
State	Published - 1 Nov 2023

Keywords

band bending
geometrical design
heterojunction channel
oxide semiconductors
thin-film transistors

Access to Document

10.35848/1882-0786/ad0654

Cite this

@article{59f7ba1e64e749d8b17c8a7dfcad9698,

title = "Geometrically designed amorphous oxide semiconductor heterojunction thin-film transistors for enhanced electrical performance and stability",

abstract = "We report the geometrical design of indium-zinc-tin-oxide/zinc-tin-oxide (IZTO/TZO) heterojunction thin-film transistors (TFTs) to achieve high electrical performance and stability. The coverage ratio of the IZTO front-channel-layer (FCL) in the channel region was varied to investigate its impact on electrical properties such as field-effect mobility and bias stability. We observed that with a 90\% coverage ratio of IZTO FCL, the mobility increased from 15.9 cm2 Vs−1 to 20.4 cm2 Vs−1, with a suppressed threshold voltage (V th) shift. The IZTO/ZTO TFTs exhibited improved positive gate-bias stability showing a V th shift of +2.46 V. The band bending occurring at the heterointerface is attributed to the enhanced electrical performance.",

keywords = "band bending, geometrical design, heterojunction channel, oxide semiconductors, thin-film transistors",

author = "Sunghyun Park and Boyeon Park and Woojong Kim and Kunsang Yoo and Kim, \{Yong Hoon\}",

note = "Publisher Copyright: {\textcopyright} 2023 The Japan Society of Applied Physics",

year = "2023",

month = nov,

day = "1",

doi = "10.35848/1882-0786/ad0654",

language = "English",

volume = "16",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "11",

}

TY - JOUR

T1 - Geometrically designed amorphous oxide semiconductor heterojunction thin-film transistors for enhanced electrical performance and stability

AU - Park, Sunghyun

AU - Park, Boyeon

AU - Kim, Woojong

AU - Yoo, Kunsang

AU - Kim, Yong Hoon

PY - 2023/11/1

Y1 - 2023/11/1

N2 - We report the geometrical design of indium-zinc-tin-oxide/zinc-tin-oxide (IZTO/TZO) heterojunction thin-film transistors (TFTs) to achieve high electrical performance and stability. The coverage ratio of the IZTO front-channel-layer (FCL) in the channel region was varied to investigate its impact on electrical properties such as field-effect mobility and bias stability. We observed that with a 90% coverage ratio of IZTO FCL, the mobility increased from 15.9 cm2 Vs−1 to 20.4 cm2 Vs−1, with a suppressed threshold voltage (V th) shift. The IZTO/ZTO TFTs exhibited improved positive gate-bias stability showing a V th shift of +2.46 V. The band bending occurring at the heterointerface is attributed to the enhanced electrical performance.

AB - We report the geometrical design of indium-zinc-tin-oxide/zinc-tin-oxide (IZTO/TZO) heterojunction thin-film transistors (TFTs) to achieve high electrical performance and stability. The coverage ratio of the IZTO front-channel-layer (FCL) in the channel region was varied to investigate its impact on electrical properties such as field-effect mobility and bias stability. We observed that with a 90% coverage ratio of IZTO FCL, the mobility increased from 15.9 cm2 Vs−1 to 20.4 cm2 Vs−1, with a suppressed threshold voltage (V th) shift. The IZTO/ZTO TFTs exhibited improved positive gate-bias stability showing a V th shift of +2.46 V. The band bending occurring at the heterointerface is attributed to the enhanced electrical performance.

KW - band bending

KW - geometrical design

KW - heterojunction channel

KW - oxide semiconductors

KW - thin-film transistors

UR - https://www.scopus.com/pages/publications/85178126294

U2 - 10.35848/1882-0786/ad0654

DO - 10.35848/1882-0786/ad0654

M3 - Article

AN - SCOPUS:85178126294

SN - 1882-0778

VL - 16

JO - Applied Physics Express

JF - Applied Physics Express

IS - 11

M1 - 111002

ER -

Geometrically designed amorphous oxide semiconductor heterojunction thin-film transistors for enhanced electrical performance and stability

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this