Generation of low-energy neutral beam for Si etching

S. J. Kim; S. J. Wang; J. K. Lee; D. H. Lee; G. Y. Yeom

doi:10.1116/1.1774198

Generation of low-energy neutral beam for Si etching

S. J. Kim, S. J. Wang, J. K. Lee, D. H. Lee, G. Y. Yeom

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The neutral beam generation using an ion gun and low-angle reflectors was analyzed. It was observed that low-energy neutral beam from an ion gun with two grids had a low neutral flux and broad angle distribution. A three-grid ion gun that had one additional grid with positive voltage allowing independent control of the ion flux and ion energy was presented. Various advantages of three-grid ion gun for trench etching such as increased etch rate, and decreased sidewall etching were also elaborated.

Original language	English
Pages (from-to)	1948-1955
Number of pages	8
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	22
Issue number	5
DOIs	https://doi.org/10.1116/1.1774198
State	Published - Sep 2004

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title = "Generation of low-energy neutral beam for Si etching",

abstract = "The neutral beam generation using an ion gun and low-angle reflectors was analyzed. It was observed that low-energy neutral beam from an ion gun with two grids had a low neutral flux and broad angle distribution. A three-grid ion gun that had one additional grid with positive voltage allowing independent control of the ion flux and ion energy was presented. Various advantages of three-grid ion gun for trench etching such as increased etch rate, and decreased sidewall etching were also elaborated.",

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AU - Kim, S. J.

AU - Wang, S. J.

AU - Lee, J. K.

AU - Lee, D. H.

AU - Yeom, G. Y.

PY - 2004/9

Y1 - 2004/9

N2 - The neutral beam generation using an ion gun and low-angle reflectors was analyzed. It was observed that low-energy neutral beam from an ion gun with two grids had a low neutral flux and broad angle distribution. A three-grid ion gun that had one additional grid with positive voltage allowing independent control of the ion flux and ion energy was presented. Various advantages of three-grid ion gun for trench etching such as increased etch rate, and decreased sidewall etching were also elaborated.

AB - The neutral beam generation using an ion gun and low-angle reflectors was analyzed. It was observed that low-energy neutral beam from an ion gun with two grids had a low neutral flux and broad angle distribution. A three-grid ion gun that had one additional grid with positive voltage allowing independent control of the ion flux and ion energy was presented. Various advantages of three-grid ion gun for trench etching such as increased etch rate, and decreased sidewall etching were also elaborated.

UR - https://www.scopus.com/pages/publications/8444251788

U2 - 10.1116/1.1774198

DO - 10.1116/1.1774198

M3 - Article

AN - SCOPUS:8444251788

SN - 0734-2101

VL - 22

SP - 1948

EP - 1955

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 5

ER -

Generation of low-energy neutral beam for Si etching

Abstract

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