Gd-substituted bismuth titanate film capacitors having ferroelectric reliability and large non-volatile charges

Uong Chon; Hyun M. Jang; Nam S. Shin; Jae S. Kim; Do C. Ahn; Yun S. Kim; Kwangsoo No

doi:10.1016/j.physb.2006.05.434

Gd-substituted bismuth titanate film capacitors having ferroelectric reliability and large non-volatile charges

Uong Chon, Hyun M. Jang, Nam S. Shin, Jae S. Kim, Do C. Ahn, Yun S. Kim, Kwangsoo No

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Fatigue-free Gd-modified bismuth titanate (Bi_3.15Gd_0.85Ti₃O₁₂; BGdT) film capacitors having stable charge-retaining characteristics were grown on Pt/TiO₂/SiO₂/Si(1 0 0) substrates using the method of metal-organic sol decomposition. The BGdT film capacitor with a top Pt electrode showed significantly improved values of the remanent polarization (2P_r) and the non-volatile charge as compared to those of the Bi_4-xLa_xTi₃O₁₂ (BLT; x=0.75) film capacitor, currently renowned as a promising candidate for non-volatile memories. The saturated 2P_r value of the BGdT capacitor was 75 μC/cm² while it remained essentially constant up to 4.5×10¹⁰ read/write switching cycles at a frequency of 1 MHz. In addition to these, the capacitor demonstrated excellent charge-retention characteristics with its sensing margin of 52 μC/cm² and a strong resistance against the imprinting failure.

Original language	English
Pages (from-to)	190-194
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	388
Issue number	1-2
DOIs	https://doi.org/10.1016/j.physb.2006.05.434
State	Published - 15 Jan 2007
Externally published	Yes

Keywords

Fatigue-free
Ferroelectric
FRAM
Gadolinium-modified bismuth titanate

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10.1016/j.physb.2006.05.434

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@article{1ac901ad04254f8c8a37d85e096337df,

title = "Gd-substituted bismuth titanate film capacitors having ferroelectric reliability and large non-volatile charges",

abstract = "Fatigue-free Gd-modified bismuth titanate (Bi3.15Gd0.85Ti3O12; BGdT) film capacitors having stable charge-retaining characteristics were grown on Pt/TiO2/SiO2/Si(1 0 0) substrates using the method of metal-organic sol decomposition. The BGdT film capacitor with a top Pt electrode showed significantly improved values of the remanent polarization (2Pr) and the non-volatile charge as compared to those of the Bi4-xLaxTi3O12 (BLT; x=0.75) film capacitor, currently renowned as a promising candidate for non-volatile memories. The saturated 2Pr value of the BGdT capacitor was 75 μC/cm2 while it remained essentially constant up to 4.5×1010 read/write switching cycles at a frequency of 1 MHz. In addition to these, the capacitor demonstrated excellent charge-retention characteristics with its sensing margin of 52 μC/cm2 and a strong resistance against the imprinting failure.",

keywords = "Fatigue-free, Ferroelectric, FRAM, Gadolinium-modified bismuth titanate",

author = "Uong Chon and Jang, \{Hyun M.\} and Shin, \{Nam S.\} and Kim, \{Jae S.\} and Ahn, \{Do C.\} and Kim, \{Yun S.\} and Kwangsoo No",

year = "2007",

month = jan,

day = "15",

doi = "10.1016/j.physb.2006.05.434",

language = "English",

volume = "388",

pages = "190--194",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Gd-substituted bismuth titanate film capacitors having ferroelectric reliability and large non-volatile charges

AU - Chon, Uong

AU - Jang, Hyun M.

AU - Shin, Nam S.

AU - Kim, Jae S.

AU - Ahn, Do C.

AU - Kim, Yun S.

AU - No, Kwangsoo

PY - 2007/1/15

Y1 - 2007/1/15

N2 - Fatigue-free Gd-modified bismuth titanate (Bi3.15Gd0.85Ti3O12; BGdT) film capacitors having stable charge-retaining characteristics were grown on Pt/TiO2/SiO2/Si(1 0 0) substrates using the method of metal-organic sol decomposition. The BGdT film capacitor with a top Pt electrode showed significantly improved values of the remanent polarization (2Pr) and the non-volatile charge as compared to those of the Bi4-xLaxTi3O12 (BLT; x=0.75) film capacitor, currently renowned as a promising candidate for non-volatile memories. The saturated 2Pr value of the BGdT capacitor was 75 μC/cm2 while it remained essentially constant up to 4.5×1010 read/write switching cycles at a frequency of 1 MHz. In addition to these, the capacitor demonstrated excellent charge-retention characteristics with its sensing margin of 52 μC/cm2 and a strong resistance against the imprinting failure.

AB - Fatigue-free Gd-modified bismuth titanate (Bi3.15Gd0.85Ti3O12; BGdT) film capacitors having stable charge-retaining characteristics were grown on Pt/TiO2/SiO2/Si(1 0 0) substrates using the method of metal-organic sol decomposition. The BGdT film capacitor with a top Pt electrode showed significantly improved values of the remanent polarization (2Pr) and the non-volatile charge as compared to those of the Bi4-xLaxTi3O12 (BLT; x=0.75) film capacitor, currently renowned as a promising candidate for non-volatile memories. The saturated 2Pr value of the BGdT capacitor was 75 μC/cm2 while it remained essentially constant up to 4.5×1010 read/write switching cycles at a frequency of 1 MHz. In addition to these, the capacitor demonstrated excellent charge-retention characteristics with its sensing margin of 52 μC/cm2 and a strong resistance against the imprinting failure.

KW - Fatigue-free

KW - Ferroelectric

KW - FRAM

KW - Gadolinium-modified bismuth titanate

UR - https://www.scopus.com/pages/publications/33751219579

U2 - 10.1016/j.physb.2006.05.434

DO - 10.1016/j.physb.2006.05.434

M3 - Article

AN - SCOPUS:33751219579

SN - 0921-4526

VL - 388

SP - 190

EP - 194

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-2

ER -

Gd-substituted bismuth titanate film capacitors having ferroelectric reliability and large non-volatile charges

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Keywords

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