Gate-induced drain leakage current of MOSFET with junction doping dependence

In deep-submicron metal-oxide-semiconductor field-effect transistor (MOSFET) channel and junction doping concentration become higher and the junction profile is more abrupt, causing a higher electric field in the devices. [1-3] The gate-induced-drain-leakage (GIDL) current, induced by the high electric field between gate and drain, has become one of the major leakage current components. A classical theory for the GIDL current generation has been proposed for high drain-to-gate biases. [4] Short-channel transistors require lower power supply levels to reduce their internal electric fields and power consumption. This forces a reduction in the threshold voltage that causes a substantially large increase in the off leakage current. This increase is due to the weak inversion state leakage and is a function of the threshold voltage. In this letter, we have presented the result of GIDL currents for devices with junction doping and the channel doping ion implantation dependence. The drain junction doping dependency of the GIDL current in the same transistor with the change of source and drain terminal is discussed. And the body bias effect for the GIDL current is studied in terms of the band to band tunneling (BTBT) of electrons in the reverse-biased channel-to-drain p-n junction.