Gap-filling of Cu-Al alloy into nanotrenches by cyclic metalorganic chemical vapor deposition

H. K. Moon; S. J. Lee; J. Yoon; H. Kim; N. E. Lee

doi:10.1016/j.materresbull.2012.04.107

Gap-filling of Cu-Al alloy into nanotrenches by cyclic metalorganic chemical vapor deposition

H. K. Moon, S. J. Lee, J. Yoon, H. Kim, N. E. Lee

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this work, Cu-Al alloy thin films with lower values of electrical resistivity than that of an Al-free Cu thin film were produced by cyclic metalorganic chemical vapor deposition (MOCVD), followed by thermal annealing of the Cu/Al multilayer formed, with controlled Cu and Al precursor delivery times. The Ru-coated SiO ₂ trench with the opening width of 50 nm and aspect ratio of 1:6.7 could be completely filled by the Cu-Al alloy. The Ru/SiO ₂ trench, filled conformally and voidlessly by the Cu-Al (0.7 at.%) alloy, showed no presence of intermetallic compounds.

Original language	English
Pages (from-to)	2961-2965
Number of pages	5
Journal	Materials Research Bulletin
Volume	47
Issue number	10
DOIs	https://doi.org/10.1016/j.materresbull.2012.04.107
State	Published - Oct 2012

Keywords

A. Alloys
A. Thin films
B. Vapor deposition
C. Electron microscopy
D. Microstructure

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10.1016/j.materresbull.2012.04.107

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title = "Gap-filling of Cu-Al alloy into nanotrenches by cyclic metalorganic chemical vapor deposition",

abstract = "In this work, Cu-Al alloy thin films with lower values of electrical resistivity than that of an Al-free Cu thin film were produced by cyclic metalorganic chemical vapor deposition (MOCVD), followed by thermal annealing of the Cu/Al multilayer formed, with controlled Cu and Al precursor delivery times. The Ru-coated SiO 2 trench with the opening width of 50 nm and aspect ratio of 1:6.7 could be completely filled by the Cu-Al alloy. The Ru/SiO 2 trench, filled conformally and voidlessly by the Cu-Al (0.7 at.\%) alloy, showed no presence of intermetallic compounds.",

keywords = "A. Alloys, A. Thin films, B. Vapor deposition, C. Electron microscopy, D. Microstructure",

author = "Moon, \{H. K.\} and Lee, \{S. J.\} and J. Yoon and H. Kim and Lee, \{N. E.\}",

year = "2012",

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doi = "10.1016/j.materresbull.2012.04.107",

language = "English",

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pages = "2961--2965",

journal = "Materials Research Bulletin",

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T1 - Gap-filling of Cu-Al alloy into nanotrenches by cyclic metalorganic chemical vapor deposition

AU - Moon, H. K.

AU - Lee, S. J.

AU - Yoon, J.

AU - Kim, H.

AU - Lee, N. E.

PY - 2012/10

Y1 - 2012/10

N2 - In this work, Cu-Al alloy thin films with lower values of electrical resistivity than that of an Al-free Cu thin film were produced by cyclic metalorganic chemical vapor deposition (MOCVD), followed by thermal annealing of the Cu/Al multilayer formed, with controlled Cu and Al precursor delivery times. The Ru-coated SiO 2 trench with the opening width of 50 nm and aspect ratio of 1:6.7 could be completely filled by the Cu-Al alloy. The Ru/SiO 2 trench, filled conformally and voidlessly by the Cu-Al (0.7 at.%) alloy, showed no presence of intermetallic compounds.

AB - In this work, Cu-Al alloy thin films with lower values of electrical resistivity than that of an Al-free Cu thin film were produced by cyclic metalorganic chemical vapor deposition (MOCVD), followed by thermal annealing of the Cu/Al multilayer formed, with controlled Cu and Al precursor delivery times. The Ru-coated SiO 2 trench with the opening width of 50 nm and aspect ratio of 1:6.7 could be completely filled by the Cu-Al alloy. The Ru/SiO 2 trench, filled conformally and voidlessly by the Cu-Al (0.7 at.%) alloy, showed no presence of intermetallic compounds.

KW - A. Alloys

KW - A. Thin films

KW - B. Vapor deposition

KW - C. Electron microscopy

KW - D. Microstructure

UR - https://www.scopus.com/pages/publications/84866332891

U2 - 10.1016/j.materresbull.2012.04.107

DO - 10.1016/j.materresbull.2012.04.107

M3 - Article

AN - SCOPUS:84866332891

SN - 0025-5408

VL - 47

SP - 2961

EP - 2965

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 10

ER -

Gap-filling of Cu-Al alloy into nanotrenches by cyclic metalorganic chemical vapor deposition

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Keywords

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