Gan nanotubes

Seung Mi Lee; Young Hee Lee; Yong Gyoo Hwang; J. Elsner; Dirk Porezag; Thomas Frauenheim

Gan nanotubes

Seung Mi Lee, Young Hee Lee, Yong Gyoo Hwang, J. Elsner, Dirk Porezag, Thomas Frauenheim

Research output: Contribution to journal › Article › peer-review

Abstract

We perform parametrized density-functional calculations to predict the stability and formation mechanism of GaN nanotubes. Strain energies of GaN nanotubes are comparable to those of carbon nanotubes, suggesting the possibility for the formation of GaN nanotubes. We note that an intermediate phase with [4,6,10] polygons exist at armchair tube edge, which may play as a nucleation seed of further tube growth.

Original language	English
Pages (from-to)	6d
Journal	MRS Internet Journal of Nitride Semiconductor Research
Volume	4
Issue number	SUPPL. 1
State	Published - 1999
Externally published	Yes

Cite this

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title = "Gan nanotubes",

abstract = "We perform parametrized density-functional calculations to predict the stability and formation mechanism of GaN nanotubes. Strain energies of GaN nanotubes are comparable to those of carbon nanotubes, suggesting the possibility for the formation of GaN nanotubes. We note that an intermediate phase with [4,6,10] polygons exist at armchair tube edge, which may play as a nucleation seed of further tube growth.",

author = "Lee, \{Seung Mi\} and Lee, \{Young Hee\} and Hwang, \{Yong Gyoo\} and J. Elsner and Dirk Porezag and Thomas Frauenheim",

year = "1999",

language = "English",

volume = "4",

pages = "6d",

journal = "MRS Internet Journal of Nitride Semiconductor Research",

issn = "1092-5783",

publisher = "Materials Research Society",

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TY - JOUR

T1 - Gan nanotubes

AU - Lee, Seung Mi

AU - Lee, Young Hee

AU - Hwang, Yong Gyoo

AU - Elsner, J.

AU - Porezag, Dirk

AU - Frauenheim, Thomas

PY - 1999

Y1 - 1999

N2 - We perform parametrized density-functional calculations to predict the stability and formation mechanism of GaN nanotubes. Strain energies of GaN nanotubes are comparable to those of carbon nanotubes, suggesting the possibility for the formation of GaN nanotubes. We note that an intermediate phase with [4,6,10] polygons exist at armchair tube edge, which may play as a nucleation seed of further tube growth.

AB - We perform parametrized density-functional calculations to predict the stability and formation mechanism of GaN nanotubes. Strain energies of GaN nanotubes are comparable to those of carbon nanotubes, suggesting the possibility for the formation of GaN nanotubes. We note that an intermediate phase with [4,6,10] polygons exist at armchair tube edge, which may play as a nucleation seed of further tube growth.

UR - https://www.scopus.com/pages/publications/3442887158

M3 - Article

AN - SCOPUS:3442887158

SN - 1092-5783

VL - 4

SP - 6d

JO - MRS Internet Journal of Nitride Semiconductor Research

JF - MRS Internet Journal of Nitride Semiconductor Research

IS - SUPPL. 1

ER -

Gan nanotubes

Abstract

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