GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack

Fei Gao; S. J. Lee; Rui Li; S. J. Whang; S. Balakumar; D. Z. Chi; Chia Ching Kean; S. Vicknesh; C. H. Tung; D. L. Kwong

doi:10.1109/IEDM.2006.346743

GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO₂/TaN gate stack

Fei Gao
, S. J. Lee
, Rui Li
, S. J. Whang
, S. Balakumar
, D. Z. Chi
, Chia Ching Kean
, S. Vicknesh
, C. H. Tung
, D. L. Kwong

National University of Singapore
Agency for Science, Technology and Research, Singapore

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

By using novel surface passivation techniques (Plasma Nitridation, AlN-passivation) on GaAs, we demonstrate GaAs p- and n-MOS devices integrated with ALD-HfO₂/TaN gate stack. Results show that robust passivation layers can be achieved at HfO₂/GaAs interface, leading to good C-V characteristics on both n- and p-type GaAs with low leakage current. It is also found that GaAs MOS devices with plasma nitridation and AlN-passivation show higher thermal-stability than Si-passivated devices.

Original language	English
Title of host publication	2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs	https://doi.org/10.1109/IEDM.2006.346743
State	Published - 2006
Externally published	Yes
Event	2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States Duration: 10 Dec 2006 → 13 Dec 2006

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2006 International Electron Devices Meeting, IEDM
Country/Territory	United States
City	San Francisco, CA
Period	10/12/06 → 13/12/06

Access to Document

10.1109/IEDM.2006.346743

Cite this

Gao, F., Lee, S. J., Li, R., Whang, S. J., Balakumar, S., Chi, D. Z., Kean, C. C., Vicknesh, S., Tung, C. H., & Kwong, D. L. (2006). GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO₂/TaN gate stack. In 2006 International Electron Devices Meeting Technical Digest, IEDM Article 4154344 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346743

@inproceedings{c4bb42f601d34f70b7a9ea06c33aa2f3,

title = "GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack",

abstract = "By using novel surface passivation techniques (Plasma Nitridation, AlN-passivation) on GaAs, we demonstrate GaAs p- and n-MOS devices integrated with ALD-HfO2/TaN gate stack. Results show that robust passivation layers can be achieved at HfO2/GaAs interface, leading to good C-V characteristics on both n- and p-type GaAs with low leakage current. It is also found that GaAs MOS devices with plasma nitridation and AlN-passivation show higher thermal-stability than Si-passivated devices.",

author = "Fei Gao and Lee, \{S. J.\} and Rui Li and Whang, \{S. J.\} and S. Balakumar and Chi, \{D. Z.\} and Kean, \{Chia Ching\} and S. Vicknesh and Tung, \{C. H.\} and Kwong, \{D. L.\}",

year = "2006",

doi = "10.1109/IEDM.2006.346743",

language = "English",

isbn = "1424404398",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2006 International Electron Devices Meeting Technical Digest, IEDM",

note = "2006 International Electron Devices Meeting, IEDM ; Conference date: 10-12-2006 Through 13-12-2006",

}

Gao, F, Lee, SJ, Li, R, Whang, SJ, Balakumar, S, Chi, DZ, Kean, CC, Vicknesh, S, Tung, CH & Kwong, DL 2006, GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO₂/TaN gate stack. in 2006 International Electron Devices Meeting Technical Digest, IEDM., 4154344, Technical Digest - International Electron Devices Meeting, IEDM, 2006 International Electron Devices Meeting, IEDM, San Francisco, CA, United States, 10/12/06. https://doi.org/10.1109/IEDM.2006.346743

GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO₂/TaN gate stack. / Gao, Fei; Lee, S. J.; Li, Rui et al.
2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154344 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack

AU - Gao, Fei

AU - Lee, S. J.

AU - Li, Rui

AU - Whang, S. J.

AU - Balakumar, S.

AU - Chi, D. Z.

AU - Kean, Chia Ching

AU - Vicknesh, S.

AU - Tung, C. H.

AU - Kwong, D. L.

PY - 2006

Y1 - 2006

N2 - By using novel surface passivation techniques (Plasma Nitridation, AlN-passivation) on GaAs, we demonstrate GaAs p- and n-MOS devices integrated with ALD-HfO2/TaN gate stack. Results show that robust passivation layers can be achieved at HfO2/GaAs interface, leading to good C-V characteristics on both n- and p-type GaAs with low leakage current. It is also found that GaAs MOS devices with plasma nitridation and AlN-passivation show higher thermal-stability than Si-passivated devices.

AB - By using novel surface passivation techniques (Plasma Nitridation, AlN-passivation) on GaAs, we demonstrate GaAs p- and n-MOS devices integrated with ALD-HfO2/TaN gate stack. Results show that robust passivation layers can be achieved at HfO2/GaAs interface, leading to good C-V characteristics on both n- and p-type GaAs with low leakage current. It is also found that GaAs MOS devices with plasma nitridation and AlN-passivation show higher thermal-stability than Si-passivated devices.

UR - https://www.scopus.com/pages/publications/46049091194

U2 - 10.1109/IEDM.2006.346743

DO - 10.1109/IEDM.2006.346743

M3 - Conference contribution

AN - SCOPUS:46049091194

SN - 1424404398

SN - 9781424404391

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2006 International Electron Devices Meeting Technical Digest, IEDM

T2 - 2006 International Electron Devices Meeting, IEDM

Y2 - 10 December 2006 through 13 December 2006

ER -

Gao F, Lee SJ, Li R, Whang SJ, Balakumar S, Chi DZ et al. GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO₂/TaN gate stack. In 2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154344. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2006.346743