TY - JOUR
T1 - G-band (140-220 GHz) and W-band (75-110 GHz) InP DHBT medium power amplifiers
AU - Paidi, Vamsi K.
AU - Griffith, Zach
AU - Wei, Yun
AU - Dahlstrom, Mattias
AU - Urteaga, Miguel
AU - Parthasarathy, Navin
AU - Seo, Munkyo
AU - Samoska, Lorene
AU - Fung, Andy
AU - Rodwell, Mark J.W.
PY - 2005/2
Y1 - 2005/2
N2 - We report common-base medium power amplifiers designed for G-band (140-220 GHz) and W-band (75-110 GHz) in InP mesa double HBT technology. The common-base topology is preferred over common-emitter and common-collector topologies due to its superior high-frequency maximum stable gain (MSG): Base feed inductance and collector emitter overlap capacitance, however, reduce the common-base MSG. A single-sided collector contact reduces Cce and, hence, improves the MSG. A single-stage common-base tuned amplifier exhibited 7-dB small-signal gain at 176 GHz. This amplifier demonstrated 8.7-dBm output power with 5-dB associated power gain at 172 GHz. A two-stage common-base amplifier exhibited 8.1-dBm output power with 6.3-dB associated power gain at 176 GHz and demonstrated 9.1-dBm saturated output power. Another two-stage common-base amplifier exhibited 11.6-dBm output power with an associated power gain of 4.5 dB at 148 GHz. In the W-band, different designs of single-stage common-base power amplifiers demonstrated saturated output power of 15.1 dBm at 84 GHz and 13.7 dBm at 93 GHz.
AB - We report common-base medium power amplifiers designed for G-band (140-220 GHz) and W-band (75-110 GHz) in InP mesa double HBT technology. The common-base topology is preferred over common-emitter and common-collector topologies due to its superior high-frequency maximum stable gain (MSG): Base feed inductance and collector emitter overlap capacitance, however, reduce the common-base MSG. A single-sided collector contact reduces Cce and, hence, improves the MSG. A single-stage common-base tuned amplifier exhibited 7-dB small-signal gain at 176 GHz. This amplifier demonstrated 8.7-dBm output power with 5-dB associated power gain at 172 GHz. A two-stage common-base amplifier exhibited 8.1-dBm output power with 6.3-dB associated power gain at 176 GHz and demonstrated 9.1-dBm saturated output power. Another two-stage common-base amplifier exhibited 11.6-dBm output power with an associated power gain of 4.5 dB at 148 GHz. In the W-band, different designs of single-stage common-base power amplifiers demonstrated saturated output power of 15.1 dBm at 84 GHz and 13.7 dBm at 93 GHz.
KW - InP heterojunction bipolar transistor
KW - Millimeter-wave amplifier
KW - Monolithic microwave integrated circuit (MMIC) amplifiers
UR - https://www.scopus.com/pages/publications/20044366361
U2 - 10.1109/TMTT.2004.840662
DO - 10.1109/TMTT.2004.840662
M3 - Article
AN - SCOPUS:20044366361
SN - 0018-9480
VL - 53
SP - 598
EP - 605
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
IS - 2
ER -