Fully transparent pixel circuits driven by random network carbon nanotube transistor circuitry

Sunkook Kim; Seongmin Kim; Jongsun Park; Sanghyun Ju; Saeed Mohammadi

doi:10.1021/nn1006094

Fully transparent pixel circuits driven by random network carbon nanotube transistor circuitry

Sunkook Kim, Seongmin Kim, Jongsun Park, Sanghyun Ju, Saeed Mohammadi

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

Optically transparent and mechanically flexible thin-film transistors have recently attracted attention for next generation transparent display technologies. Driving and switching transistors for transparent displays have challenging requirements such as high optical transparency, large-scale integration, suitable drive current (I_on) in the microampere range, high on/off current ratio (I_on/I_off), high field-effect mobility, and uniform threshold voltage (V_th). In this study, we demonstrate fully transparent high-performance and high-yield thin-film transistors based on random growth of a single-walled carbon nanotube (SWNT) network that are easy to fabricate. High-performance SWNT-TFTs exhibit optical transmission of 80% in visible wavelength, Ion/Ioff higher than 10³, and a high yield with reproducible electrical characteristics.

Original language	English
Pages (from-to)	2994-2998
Number of pages	5
Journal	ACS Nano
Volume	4
Issue number	6
DOIs	https://doi.org/10.1021/nn1006094
State	Published - 22 Jun 2010
Externally published	Yes

Keywords

Carbon nanotube
Driving circuit
Network nanotube
OLED
Pixel
Thin-film transistor
Transparent

Access to Document

10.1021/nn1006094

Cite this

@article{8c656deef12f42aea5e07232d553cbfe,

title = "Fully transparent pixel circuits driven by random network carbon nanotube transistor circuitry",

abstract = "Optically transparent and mechanically flexible thin-film transistors have recently attracted attention for next generation transparent display technologies. Driving and switching transistors for transparent displays have challenging requirements such as high optical transparency, large-scale integration, suitable drive current (Ion) in the microampere range, high on/off current ratio (Ion/Ioff), high field-effect mobility, and uniform threshold voltage (Vth). In this study, we demonstrate fully transparent high-performance and high-yield thin-film transistors based on random growth of a single-walled carbon nanotube (SWNT) network that are easy to fabricate. High-performance SWNT-TFTs exhibit optical transmission of 80\% in visible wavelength, Ion/Ioff higher than 103, and a high yield with reproducible electrical characteristics.",

keywords = "Carbon nanotube, Driving circuit, Network nanotube, OLED, Pixel, Thin-film transistor, Transparent",

author = "Sunkook Kim and Seongmin Kim and Jongsun Park and Sanghyun Ju and Saeed Mohammadi",

year = "2010",

month = jun,

day = "22",

doi = "10.1021/nn1006094",

language = "English",

volume = "4",

pages = "2994--2998",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "6",

}

TY - JOUR

T1 - Fully transparent pixel circuits driven by random network carbon nanotube transistor circuitry

AU - Kim, Sunkook

AU - Kim, Seongmin

AU - Park, Jongsun

AU - Ju, Sanghyun

AU - Mohammadi, Saeed

PY - 2010/6/22

Y1 - 2010/6/22

N2 - Optically transparent and mechanically flexible thin-film transistors have recently attracted attention for next generation transparent display technologies. Driving and switching transistors for transparent displays have challenging requirements such as high optical transparency, large-scale integration, suitable drive current (Ion) in the microampere range, high on/off current ratio (Ion/Ioff), high field-effect mobility, and uniform threshold voltage (Vth). In this study, we demonstrate fully transparent high-performance and high-yield thin-film transistors based on random growth of a single-walled carbon nanotube (SWNT) network that are easy to fabricate. High-performance SWNT-TFTs exhibit optical transmission of 80% in visible wavelength, Ion/Ioff higher than 103, and a high yield with reproducible electrical characteristics.

AB - Optically transparent and mechanically flexible thin-film transistors have recently attracted attention for next generation transparent display technologies. Driving and switching transistors for transparent displays have challenging requirements such as high optical transparency, large-scale integration, suitable drive current (Ion) in the microampere range, high on/off current ratio (Ion/Ioff), high field-effect mobility, and uniform threshold voltage (Vth). In this study, we demonstrate fully transparent high-performance and high-yield thin-film transistors based on random growth of a single-walled carbon nanotube (SWNT) network that are easy to fabricate. High-performance SWNT-TFTs exhibit optical transmission of 80% in visible wavelength, Ion/Ioff higher than 103, and a high yield with reproducible electrical characteristics.

KW - Carbon nanotube

KW - Driving circuit

KW - Network nanotube

KW - OLED

KW - Pixel

KW - Thin-film transistor

KW - Transparent

UR - https://www.scopus.com/pages/publications/77955875697

U2 - 10.1021/nn1006094

DO - 10.1021/nn1006094

M3 - Article

C2 - 20450163

AN - SCOPUS:77955875697

SN - 1936-0851

VL - 4

SP - 2994

EP - 2998

JO - ACS Nano

JF - ACS Nano

IS - 6

ER -

Fully transparent pixel circuits driven by random network carbon nanotube transistor circuitry

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this