TY - JOUR
T1 - Fully Printed and Encapsulated SWCNT-Based Thin Film Transistors via a Combination of R2R Gravure and Inkjet Printing
AU - Homenick, Christa M.
AU - James, Robert
AU - Lopinski, Gregory P.
AU - Dunford, Jeffrey
AU - Sun, Junfeng
AU - Park, Hyejin
AU - Jung, Younsu
AU - Cho, Gyoujin
AU - Malenfant, Patrick R.L.
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/10/19
Y1 - 2016/10/19
N2 - Fully printed thin film transistors (TFT) based on poly(9,9-di-n-dodecylfluorene) (PFDD) wrapped semiconducting single walled carbon nanotube (SWCNT) channels are fabricated by a practical route that combines roll-to-roll (R2R) gravure and ink jet printing. SWCNT network density is easily controlled via ink formulation (concentration and polymer:CNT ratio) and jetting conditions (droplet size, drop spacing, and number of printed layers). Optimum inkjet printing conditions are established on Si/SiO2 in which an ink consisting of 6:1 PFDD:SWCNT ratio with 50 mg L-1 SWCNT concentration printed at a drop spacing of 20 μm results in TFTs with mobilities of ∼25 cm2 V-1 s-1 and on-/off-current ratios > 105. These conditions yield excellent network uniformity and are used in a fully additive process to fabricate fully printed TFTs on PET substrates with mobility values > 5 cm2 V-1 s-1 (R2R printed gate electrode and dielectric; inkjet printed channel and source/drain electrodes). An inkjet printed encapsulation layer completes the TFT process (fabricated in bottom gate, top contact TFT configuration) and provides mobilities > 1 cm2 V-1 s-1 with good operational stability, based on the performance of an inverter circuit. An array of 20 TFTs shows that most have less than 10% variability in terms of threshold voltage, transconductance, on-current, and subthreshold swing.
AB - Fully printed thin film transistors (TFT) based on poly(9,9-di-n-dodecylfluorene) (PFDD) wrapped semiconducting single walled carbon nanotube (SWCNT) channels are fabricated by a practical route that combines roll-to-roll (R2R) gravure and ink jet printing. SWCNT network density is easily controlled via ink formulation (concentration and polymer:CNT ratio) and jetting conditions (droplet size, drop spacing, and number of printed layers). Optimum inkjet printing conditions are established on Si/SiO2 in which an ink consisting of 6:1 PFDD:SWCNT ratio with 50 mg L-1 SWCNT concentration printed at a drop spacing of 20 μm results in TFTs with mobilities of ∼25 cm2 V-1 s-1 and on-/off-current ratios > 105. These conditions yield excellent network uniformity and are used in a fully additive process to fabricate fully printed TFTs on PET substrates with mobility values > 5 cm2 V-1 s-1 (R2R printed gate electrode and dielectric; inkjet printed channel and source/drain electrodes). An inkjet printed encapsulation layer completes the TFT process (fabricated in bottom gate, top contact TFT configuration) and provides mobilities > 1 cm2 V-1 s-1 with good operational stability, based on the performance of an inverter circuit. An array of 20 TFTs shows that most have less than 10% variability in terms of threshold voltage, transconductance, on-current, and subthreshold swing.
KW - enriched semiconducting carbon nanotube ink
KW - fully printed
KW - roll-to-roll
KW - SWCNT ink formulation
KW - thin film transistor
UR - https://www.scopus.com/pages/publications/84992217972
U2 - 10.1021/acsami.6b06838
DO - 10.1021/acsami.6b06838
M3 - Article
AN - SCOPUS:84992217972
SN - 1944-8244
VL - 8
SP - 27900
EP - 27910
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 41
ER -