Abstract
We develop a theory for frictional drag between two 2D hole layers in a dilute bilayer GaAs hole system, including effects of hole-hole and hole-phonon interactions. Our calculations suggest significant enhancement of hole drag transresistivity over the corresponding electron drag results. This enhancement originates from the exchange induced renormalization of the single-layer compressibility and the strong dependence of single-layer conductivity on density. We also address the effect of hole-phonon interaction on the drag temperature dependence. Our calculated results are in reasonable quantitative agreement with recent experimental observations.
| Original language | English |
|---|---|
| Pages (from-to) | 4 |
| Number of pages | 1 |
| Journal | Physical Review Letters |
| Volume | 90 |
| Issue number | 8 |
| DOIs | |
| State | Published - 2003 |
| Externally published | Yes |
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