TY - JOUR
T1 - Fourier transform infrared spectroscopic observation of the surface reactions during electroless copper deposition in formaldehyde based electrolyte
AU - Oh, Youn Jin
AU - Chung, Chan Hwa
PY - 2006/12/5
Y1 - 2006/12/5
N2 - The reaction mechanism of copper-electroless deposition (Cu-ELD) under various electrolyte conditions was investigated by in-situ and ex-situ Fourier transform infrared spectroscopy (FTIR) analyses using an attenuated total reflection-liquid cell. In the analysis of the surface reaction, we found that gem-diol (CH2(OH)O), which is the hydrated form of formaldehyde, was oxidized to HCOO- by the Pd catalyst, thereby generating H2O at room temperature. In this case, copper nuclei were generated around the Pd catalyst and developed to form a dense Cu film, which may have resulted in "bottom-up growth" in the via filling process. At 60 °C, however, the spontaneous oxidation of gem-diol was observed in our FTIR analysis, even without a Pd catalyst. Therefore, Cu-ethylenediaminetetraacetate was spontaneously reduced in the electrolyte, and then precipitated onto the Si surface. In this case, the surface morphology of the as-grown copper film was very coarse and it exhibited poor surface adhesion. Furthermore, when the Cu-ELD was performed on Pd/Si at 60 °C, the surface reaction catalyzed by the Pd particles occurred simultaneously with the spontaneous reaction in the electrolyte. Based on these results, we concluded that optimization of the Cu-ELD process requires the suppression of this spontaneous reaction by either modifying the electrolyte or using additives.
AB - The reaction mechanism of copper-electroless deposition (Cu-ELD) under various electrolyte conditions was investigated by in-situ and ex-situ Fourier transform infrared spectroscopy (FTIR) analyses using an attenuated total reflection-liquid cell. In the analysis of the surface reaction, we found that gem-diol (CH2(OH)O), which is the hydrated form of formaldehyde, was oxidized to HCOO- by the Pd catalyst, thereby generating H2O at room temperature. In this case, copper nuclei were generated around the Pd catalyst and developed to form a dense Cu film, which may have resulted in "bottom-up growth" in the via filling process. At 60 °C, however, the spontaneous oxidation of gem-diol was observed in our FTIR analysis, even without a Pd catalyst. Therefore, Cu-ethylenediaminetetraacetate was spontaneously reduced in the electrolyte, and then precipitated onto the Si surface. In this case, the surface morphology of the as-grown copper film was very coarse and it exhibited poor surface adhesion. Furthermore, when the Cu-ELD was performed on Pd/Si at 60 °C, the surface reaction catalyzed by the Pd particles occurred simultaneously with the spontaneous reaction in the electrolyte. Based on these results, we concluded that optimization of the Cu-ELD process requires the suppression of this spontaneous reaction by either modifying the electrolyte or using additives.
KW - Copper
KW - Electroless deposition
KW - IR spectroscopy
KW - Surface analysis
UR - https://www.scopus.com/pages/publications/33750826412
U2 - 10.1016/j.tsf.2006.08.003
DO - 10.1016/j.tsf.2006.08.003
M3 - Article
AN - SCOPUS:33750826412
SN - 0040-6090
VL - 515
SP - 2137
EP - 2144
JO - Thin Solid Films
JF - Thin Solid Films
IS - 4
ER -