Formation of silicon oxide nanowires directly from Au/Si and Pd-Au/Si substrates

Hyun Kyu Park; Beelyong Yang; Sang Woo Kim; Gil Ho Kim; Doo Hyeb Youn; Sang Hyeob Kim; Sung Lyul Maeng

doi:10.1016/j.physe.2006.08.003

Formation of silicon oxide nanowires directly from Au/Si and Pd-Au/Si substrates

Hyun Kyu Park, Beelyong Yang, Sang Woo Kim, Gil Ho Kim, Doo Hyeb Youn, Sang Hyeob Kim, Sung Lyul Maeng

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Amorphous silicon oxide (SiO_x) nanowires were directly grown by thermal processing of Si substrates. Au and Pd-Au thin films with thicknesses of 3 nm deposited on Si (0 0 1) substrates were used as catalysts for the growth of nanowires. High-yield synthesis of SiO_x nanowires was achieved by a simple heating process (1000-1150 °C) in an Ar ambient atmosphere without introducing any additional Si source materials. The as-synthesized products were characterized by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy measurements. The SiO_x nanowires with lengths of a few and tens of micrometers had an amorphous crystal structure. The solid-liquid-solid model of nanowire formation was shown to be valid.

Original language	English
Pages (from-to)	158-162
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	37
Issue number	1-2
DOIs	https://doi.org/10.1016/j.physe.2006.08.003
State	Published - Mar 2007
Externally published	Yes

Keywords

CVD
Nanowire
Silicon oxide
Silicon substrate

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.physe.2006.08.003

Cite this

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title = "Formation of silicon oxide nanowires directly from Au/Si and Pd-Au/Si substrates",

abstract = "Amorphous silicon oxide (SiOx) nanowires were directly grown by thermal processing of Si substrates. Au and Pd-Au thin films with thicknesses of 3 nm deposited on Si (0 0 1) substrates were used as catalysts for the growth of nanowires. High-yield synthesis of SiOx nanowires was achieved by a simple heating process (1000-1150 °C) in an Ar ambient atmosphere without introducing any additional Si source materials. The as-synthesized products were characterized by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy measurements. The SiOx nanowires with lengths of a few and tens of micrometers had an amorphous crystal structure. The solid-liquid-solid model of nanowire formation was shown to be valid.",

keywords = "CVD, Nanowire, Silicon oxide, Silicon substrate",

author = "Park, \{Hyun Kyu\} and Beelyong Yang and Kim, \{Sang Woo\} and Kim, \{Gil Ho\} and Youn, \{Doo Hyeb\} and Kim, \{Sang Hyeob\} and Maeng, \{Sung Lyul\}",

year = "2007",

month = mar,

doi = "10.1016/j.physe.2006.08.003",

language = "English",

volume = "37",

pages = "158--162",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Formation of silicon oxide nanowires directly from Au/Si and Pd-Au/Si substrates

AU - Park, Hyun Kyu

AU - Yang, Beelyong

AU - Kim, Sang Woo

AU - Kim, Gil Ho

AU - Youn, Doo Hyeb

AU - Kim, Sang Hyeob

AU - Maeng, Sung Lyul

PY - 2007/3

Y1 - 2007/3

N2 - Amorphous silicon oxide (SiOx) nanowires were directly grown by thermal processing of Si substrates. Au and Pd-Au thin films with thicknesses of 3 nm deposited on Si (0 0 1) substrates were used as catalysts for the growth of nanowires. High-yield synthesis of SiOx nanowires was achieved by a simple heating process (1000-1150 °C) in an Ar ambient atmosphere without introducing any additional Si source materials. The as-synthesized products were characterized by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy measurements. The SiOx nanowires with lengths of a few and tens of micrometers had an amorphous crystal structure. The solid-liquid-solid model of nanowire formation was shown to be valid.

AB - Amorphous silicon oxide (SiOx) nanowires were directly grown by thermal processing of Si substrates. Au and Pd-Au thin films with thicknesses of 3 nm deposited on Si (0 0 1) substrates were used as catalysts for the growth of nanowires. High-yield synthesis of SiOx nanowires was achieved by a simple heating process (1000-1150 °C) in an Ar ambient atmosphere without introducing any additional Si source materials. The as-synthesized products were characterized by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy measurements. The SiOx nanowires with lengths of a few and tens of micrometers had an amorphous crystal structure. The solid-liquid-solid model of nanowire formation was shown to be valid.

KW - CVD

KW - Nanowire

KW - Silicon oxide

KW - Silicon substrate

UR - https://www.scopus.com/pages/publications/33947137690

U2 - 10.1016/j.physe.2006.08.003

DO - 10.1016/j.physe.2006.08.003

M3 - Article

AN - SCOPUS:33947137690

SN - 1386-9477

VL - 37

SP - 158

EP - 162

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-2

ER -

Formation of silicon oxide nanowires directly from Au/Si and Pd-Au/Si substrates

Abstract

Keywords

UN SDGs

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