Formation of nickel silicide and germanosilicide layers on Si(001), relaxed SiGe/Si (001), and strained Si/relaxed SiGe/Si (001) and effect of postthermal annealing
- J. H. Ko
- , C. H. Jang
- , S. H. Kim
- , Y. J. Song
- , N. E. Lee
- Electronics and Telecommunications Research Institute
Research output: Contribution to journal › Article › peer-review
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