Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer

Han Ki Kim; Kyoung Kook Kim; Seong Ju Park; Tae Yeon Seong; Ilesanmi Adesida

doi:10.1063/1.1604475

Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer

Han Ki Kim
, Kyoung Kook Kim
, Seong Ju Park
, Tae Yeon Seong
, Ilesanmi Adesida

Research output: Contribution to journal › Article › peer-review

120 Scopus citations

Abstract

The formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer was investigated. The specific contact resistivity was determined by using a circular-transmission line method. It was shown that the as-deposited Al\Pt contacts produce a specific contact resistivity of 1.2×10^-5 ωcm².

Original language	English
Pages (from-to)	4225-4227
Number of pages	3
Journal	Journal of Applied Physics
Volume	94
Issue number	6
DOIs	https://doi.org/10.1063/1.1604475
State	Published - 15 Sep 2003
Externally published	Yes

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10.1063/1.1604475

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title = "Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer",

abstract = "The formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer was investigated. The specific contact resistivity was determined by using a circular-transmission line method. It was shown that the as-deposited Al\textbackslash{}Pt contacts produce a specific contact resistivity of 1.2×10-5 ωcm2.",

author = "Kim, \{Han Ki\} and Kim, \{Kyoung Kook\} and Park, \{Seong Ju\} and Seong, \{Tae Yeon\} and Ilesanmi Adesida",

year = "2003",

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doi = "10.1063/1.1604475",

language = "English",

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journal = "Journal of Applied Physics",

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T1 - Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer

AU - Kim, Han Ki

AU - Kim, Kyoung Kook

AU - Park, Seong Ju

AU - Seong, Tae Yeon

AU - Adesida, Ilesanmi

PY - 2003/9/15

Y1 - 2003/9/15

N2 - The formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer was investigated. The specific contact resistivity was determined by using a circular-transmission line method. It was shown that the as-deposited Al\Pt contacts produce a specific contact resistivity of 1.2×10-5 ωcm2.

AB - The formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer was investigated. The specific contact resistivity was determined by using a circular-transmission line method. It was shown that the as-deposited Al\Pt contacts produce a specific contact resistivity of 1.2×10-5 ωcm2.

UR - https://www.scopus.com/pages/publications/0141886871

U2 - 10.1063/1.1604475

DO - 10.1063/1.1604475

M3 - Article

AN - SCOPUS:0141886871

SN - 0021-8979

VL - 94

SP - 4225

EP - 4227

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer

Abstract

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