Formation of ferroelectric nano-domains using scanning force microscopy for the future application of memory devices

H. Shin; J. Woo; S. Hong; J. U. Jeon; Y. E. Pak; K. No

doi:10.1080/10584580008215650

Formation of ferroelectric nano-domains using scanning force microscopy for the future application of memory devices

H. Shin
, J. Woo
, S. Hong
, J. U. Jeon
, Y. E. Pak
, K. No

Samsung

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

Applying voltage between the conductive tip in atomic force microscopy (AFM) and bottom electrode through Pb(Zr,Ti)O₃ (PZT) films can cause switching of ferroelectric domains. Formation and imaging of ferroelectric domains in nanometer scale could be applied to develop the future ultrahigh-density memory device. Relevant issues, i.e. bit (induced ferroelectric domains) size dependence on applied voltage and pulse width, are discussed. The bit size showed a log-linear dependence on the pulse width and a linear dependence on the pulse voltage. Using the analysis of electric field distribution, the size of the induced bits under certain pulse voltage and width was estimated.

Original language	English
Pages (from-to)	163-171
Number of pages	9
Journal	Integrated Ferroelectrics
Volume	31
Issue number	1-4
DOIs	https://doi.org/10.1080/10584580008215650
State	Published - 2000
Externally published	Yes
Event	12th International Symposium on Integrated Ferroelectrics - Aachen, Germany Duration: 12 Mar 2000 → 15 Mar 2000

Keywords

Atomic force microscopy
Coercive field
Domains size
Electric field analysis
Ferroelectric films

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10.1080/10584580008215650

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title = "Formation of ferroelectric nano-domains using scanning force microscopy for the future application of memory devices",

abstract = "Applying voltage between the conductive tip in atomic force microscopy (AFM) and bottom electrode through Pb(Zr,Ti)O3 (PZT) films can cause switching of ferroelectric domains. Formation and imaging of ferroelectric domains in nanometer scale could be applied to develop the future ultrahigh-density memory device. Relevant issues, i.e. bit (induced ferroelectric domains) size dependence on applied voltage and pulse width, are discussed. The bit size showed a log-linear dependence on the pulse width and a linear dependence on the pulse voltage. Using the analysis of electric field distribution, the size of the induced bits under certain pulse voltage and width was estimated.",

keywords = "Atomic force microscopy, Coercive field, Domains size, Electric field analysis, Ferroelectric films",

author = "H. Shin and J. Woo and S. Hong and Jeon, \{J. U.\} and Pak, \{Y. E.\} and K. No",

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pages = "163--171",

journal = "Integrated Ferroelectrics",

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note = "12th International Symposium on Integrated Ferroelectrics ; Conference date: 12-03-2000 Through 15-03-2000",

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TY - JOUR

T1 - Formation of ferroelectric nano-domains using scanning force microscopy for the future application of memory devices

AU - Shin, H.

AU - Woo, J.

AU - Hong, S.

AU - Jeon, J. U.

AU - Pak, Y. E.

AU - No, K.

PY - 2000

Y1 - 2000

N2 - Applying voltage between the conductive tip in atomic force microscopy (AFM) and bottom electrode through Pb(Zr,Ti)O3 (PZT) films can cause switching of ferroelectric domains. Formation and imaging of ferroelectric domains in nanometer scale could be applied to develop the future ultrahigh-density memory device. Relevant issues, i.e. bit (induced ferroelectric domains) size dependence on applied voltage and pulse width, are discussed. The bit size showed a log-linear dependence on the pulse width and a linear dependence on the pulse voltage. Using the analysis of electric field distribution, the size of the induced bits under certain pulse voltage and width was estimated.

AB - Applying voltage between the conductive tip in atomic force microscopy (AFM) and bottom electrode through Pb(Zr,Ti)O3 (PZT) films can cause switching of ferroelectric domains. Formation and imaging of ferroelectric domains in nanometer scale could be applied to develop the future ultrahigh-density memory device. Relevant issues, i.e. bit (induced ferroelectric domains) size dependence on applied voltage and pulse width, are discussed. The bit size showed a log-linear dependence on the pulse width and a linear dependence on the pulse voltage. Using the analysis of electric field distribution, the size of the induced bits under certain pulse voltage and width was estimated.

KW - Atomic force microscopy

KW - Coercive field

KW - Domains size

KW - Electric field analysis

KW - Ferroelectric films

UR - https://www.scopus.com/pages/publications/0034446041

U2 - 10.1080/10584580008215650

DO - 10.1080/10584580008215650

M3 - Conference article

AN - SCOPUS:0034446041

SN - 1058-4587

VL - 31

SP - 163

EP - 171

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

T2 - 12th International Symposium on Integrated Ferroelectrics

Y2 - 12 March 2000 through 15 March 2000

ER -

Formation of ferroelectric nano-domains using scanning force microscopy for the future application of memory devices

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Keywords

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