Abstract
This study examined a method to form simultaneously SiO2/SiN anti-reflection coating (ARC) films and p-n junction using a sol-gel method and heat treatment under nitridation environment for multi-crystalline silicon solar cells. Three processes such as p-n junction formation, ARC could be reduced into one step process. Chemical analysis of films after a nitridation treatment indicated a high Si-O and Si-N peak intensity. The SiO2/SiN films made from nitridation treatment at 1000 °C showed 13% reflectance at 550 nm. Also, the formation of a p-n junction was confirmed by I-V test.
| Original language | English |
|---|---|
| Pages (from-to) | 193-196 |
| Number of pages | 4 |
| Journal | Journal of Ceramic Processing Research |
| Volume | 15 |
| Issue number | 3 |
| State | Published - 2014 |
Keywords
- Anti-reflection
- P-n junction
- Silicon nitride
- Sol-gel
- Solar cell
