Formation and properties of epitaxial CoSi2 layers on p-Si0.83Ge0.17/p-Si(001) using a Si capping layer by metal-organic chemical vapor deposition

Sang Hyun Ban; Dong Ok Shin; Young Seop Ahn; Byung Tae Ahn; Kyu Hwan Shim; Nae Eung Lee

doi:10.1143/jjap.42.3350

Formation and properties of epitaxial CoSi₂ layers on p-Si_0.83Ge_0.17/p-Si(001) using a Si capping layer by metal-organic chemical vapor deposition

Sang Hyun Ban, Dong Ok Shin, Young Seop Ahn, Byung Tae Ahn, Kyu Hwan Shim, Nae Eung Lee

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Epitaxial CoSi₂ layers were in-situ grown using a sacrificial Si capping layer on p-Si_0.83Ge_0.17/p-Si(001) by metal organic vapor deposition (MOCVD) at 600°C using cyclopentadienyl cobalt, Co(η⁵-C₅H₅)(CO)₂. The grown epitaxial CoSi₂ layers remain thermally stable at the annealing temperature, T_A ≤ 800°C. The CoSi₂/p-Si_0.83Ge_0.17/ p-Si(001) samples annealed at T_A ≤ 850°C showed the sheet resistance values as low as ≅ 5.6 Ω/□. At T_A = 900°C, the observed increase in the sheet resistance value to ≅ 14.7 Ω/□ was attributed to the formation of CoSi phase with higher resistivity resulting from the direct interaction of Co with the SiGe alloy layer. The effective Schottky barrier heights (φ_BP), measured for the first time, ranged from 0.103 to 0.194 eV at the reverse bias of -5-0 V.

Original language	English
Pages (from-to)	3350-3353
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	42
Issue number	6 A
DOIs	https://doi.org/10.1143/jjap.42.3350
State	Published - Jun 2003

Keywords

Barrier height
Epitaxial cobalt disilicide
Metal organic chemical vapor deposition
Silicon germanium

Access to Document

10.1143/jjap.42.3350

Cite this

@article{012dfea3bb02491fa02acd562a0523f2,

title = "Formation and properties of epitaxial CoSi2 layers on p-Si0.83Ge0.17/p-Si(001) using a Si capping layer by metal-organic chemical vapor deposition",

abstract = "Epitaxial CoSi2 layers were in-situ grown using a sacrificial Si capping layer on p-Si0.83Ge0.17/p-Si(001) by metal organic vapor deposition (MOCVD) at 600°C using cyclopentadienyl cobalt, Co(η5-C5H5)(CO)2. The grown epitaxial CoSi2 layers remain thermally stable at the annealing temperature, TA ≤ 800°C. The CoSi2/p-Si0.83Ge0.17/ p-Si(001) samples annealed at TA ≤ 850°C showed the sheet resistance values as low as ≅ 5.6 Ω/□. At TA = 900°C, the observed increase in the sheet resistance value to ≅ 14.7 Ω/□ was attributed to the formation of CoSi phase with higher resistivity resulting from the direct interaction of Co with the SiGe alloy layer. The effective Schottky barrier heights (φBP), measured for the first time, ranged from 0.103 to 0.194 eV at the reverse bias of -5-0 V.",

keywords = "Barrier height, Epitaxial cobalt disilicide, Metal organic chemical vapor deposition, Silicon germanium",

author = "Ban, \{Sang Hyun\} and Shin, \{Dong Ok\} and Ahn, \{Young Seop\} and Ahn, \{Byung Tae\} and Shim, \{Kyu Hwan\} and Lee, \{Nae Eung\}",

year = "2003",

month = jun,

doi = "10.1143/jjap.42.3350",

language = "English",

volume = "42",

pages = "3350--3353",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "6 A",

}

TY - JOUR

T1 - Formation and properties of epitaxial CoSi2 layers on p-Si0.83Ge0.17/p-Si(001) using a Si capping layer by metal-organic chemical vapor deposition

AU - Ban, Sang Hyun

AU - Shin, Dong Ok

AU - Ahn, Young Seop

AU - Ahn, Byung Tae

AU - Shim, Kyu Hwan

AU - Lee, Nae Eung

PY - 2003/6

Y1 - 2003/6

N2 - Epitaxial CoSi2 layers were in-situ grown using a sacrificial Si capping layer on p-Si0.83Ge0.17/p-Si(001) by metal organic vapor deposition (MOCVD) at 600°C using cyclopentadienyl cobalt, Co(η5-C5H5)(CO)2. The grown epitaxial CoSi2 layers remain thermally stable at the annealing temperature, TA ≤ 800°C. The CoSi2/p-Si0.83Ge0.17/ p-Si(001) samples annealed at TA ≤ 850°C showed the sheet resistance values as low as ≅ 5.6 Ω/□. At TA = 900°C, the observed increase in the sheet resistance value to ≅ 14.7 Ω/□ was attributed to the formation of CoSi phase with higher resistivity resulting from the direct interaction of Co with the SiGe alloy layer. The effective Schottky barrier heights (φBP), measured for the first time, ranged from 0.103 to 0.194 eV at the reverse bias of -5-0 V.

AB - Epitaxial CoSi2 layers were in-situ grown using a sacrificial Si capping layer on p-Si0.83Ge0.17/p-Si(001) by metal organic vapor deposition (MOCVD) at 600°C using cyclopentadienyl cobalt, Co(η5-C5H5)(CO)2. The grown epitaxial CoSi2 layers remain thermally stable at the annealing temperature, TA ≤ 800°C. The CoSi2/p-Si0.83Ge0.17/ p-Si(001) samples annealed at TA ≤ 850°C showed the sheet resistance values as low as ≅ 5.6 Ω/□. At TA = 900°C, the observed increase in the sheet resistance value to ≅ 14.7 Ω/□ was attributed to the formation of CoSi phase with higher resistivity resulting from the direct interaction of Co with the SiGe alloy layer. The effective Schottky barrier heights (φBP), measured for the first time, ranged from 0.103 to 0.194 eV at the reverse bias of -5-0 V.

KW - Barrier height

KW - Epitaxial cobalt disilicide

KW - Metal organic chemical vapor deposition

KW - Silicon germanium

UR - https://www.scopus.com/pages/publications/0041880645

U2 - 10.1143/jjap.42.3350

DO - 10.1143/jjap.42.3350

M3 - Article

AN - SCOPUS:0041880645

SN - 0021-4922

VL - 42

SP - 3350

EP - 3353

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6 A

ER -

Formation and properties of epitaxial CoSi₂ layers on p-Si_0.83Ge_0.17/p-Si(001) using a Si capping layer by metal-organic chemical vapor deposition

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this