Fine luminescent patterning on ZnO nanowires and films using focused electron-beam irradiation

Dong Il Kim; Young Ki Hong; Suk Ho Lee; Jeongyong Kim; Jinsoo Joo

doi:10.1016/j.cap.2014.06.025

Fine luminescent patterning on ZnO nanowires and films using focused electron-beam irradiation

Dong Il Kim
, Young Ki Hong
, Suk Ho Lee
, Jeongyong Kim
, Jinsoo Joo

Department of Energy

Korea University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

ZnO thin films and nanowires (NWs) were precisely treated by focused electron-beam (E-beam) irradiation with a line width between 200 nm and 3 μm. For both ZnO films and NWs, an increased green emission was clearly observed for the E-beam-treated parts. Using a high-resolution laser confocal microscope, the photoluminescence intensities for E-beam-treated ZnO structures increased with increasing dose 1.0 × 10¹⁷-1.0 × 10¹⁸ electrons/cm². The resistivity of a single ZnO NW increased from 56 to 1800 Ω cm after the E-beam treatment. From the results for the annealed ZnO thin films, we analyzed that the variations in PL and resistivity were due to the formation of vacancies upon focused E-beam irradiation.

Original language	English
Pages (from-to)	1228-1233
Number of pages	6
Journal	Current Applied Physics
Volume	14
Issue number	9
DOIs	https://doi.org/10.1016/j.cap.2014.06.025
State	Published - Sep 2014

Keywords

Electron irradiation
Focused electron beam
Nanowire
Photoluminescence
ZnO

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10.1016/j.cap.2014.06.025

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title = "Fine luminescent patterning on ZnO nanowires and films using focused electron-beam irradiation",

abstract = "ZnO thin films and nanowires (NWs) were precisely treated by focused electron-beam (E-beam) irradiation with a line width between 200 nm and 3 μm. For both ZnO films and NWs, an increased green emission was clearly observed for the E-beam-treated parts. Using a high-resolution laser confocal microscope, the photoluminescence intensities for E-beam-treated ZnO structures increased with increasing dose 1.0 × 1017-1.0 × 1018 electrons/cm2. The resistivity of a single ZnO NW increased from 56 to 1800 Ω cm after the E-beam treatment. From the results for the annealed ZnO thin films, we analyzed that the variations in PL and resistivity were due to the formation of vacancies upon focused E-beam irradiation.",

keywords = "Electron irradiation, Focused electron beam, Nanowire, Photoluminescence, ZnO",

author = "Kim, \{Dong Il\} and Hong, \{Young Ki\} and Lee, \{Suk Ho\} and Jeongyong Kim and Jinsoo Joo",

year = "2014",

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doi = "10.1016/j.cap.2014.06.025",

language = "English",

volume = "14",

pages = "1228--1233",

journal = "Current Applied Physics",

issn = "1567-1739",

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TY - JOUR

T1 - Fine luminescent patterning on ZnO nanowires and films using focused electron-beam irradiation

AU - Kim, Dong Il

AU - Hong, Young Ki

AU - Lee, Suk Ho

AU - Kim, Jeongyong

AU - Joo, Jinsoo

PY - 2014/9

Y1 - 2014/9

N2 - ZnO thin films and nanowires (NWs) were precisely treated by focused electron-beam (E-beam) irradiation with a line width between 200 nm and 3 μm. For both ZnO films and NWs, an increased green emission was clearly observed for the E-beam-treated parts. Using a high-resolution laser confocal microscope, the photoluminescence intensities for E-beam-treated ZnO structures increased with increasing dose 1.0 × 1017-1.0 × 1018 electrons/cm2. The resistivity of a single ZnO NW increased from 56 to 1800 Ω cm after the E-beam treatment. From the results for the annealed ZnO thin films, we analyzed that the variations in PL and resistivity were due to the formation of vacancies upon focused E-beam irradiation.

AB - ZnO thin films and nanowires (NWs) were precisely treated by focused electron-beam (E-beam) irradiation with a line width between 200 nm and 3 μm. For both ZnO films and NWs, an increased green emission was clearly observed for the E-beam-treated parts. Using a high-resolution laser confocal microscope, the photoluminescence intensities for E-beam-treated ZnO structures increased with increasing dose 1.0 × 1017-1.0 × 1018 electrons/cm2. The resistivity of a single ZnO NW increased from 56 to 1800 Ω cm after the E-beam treatment. From the results for the annealed ZnO thin films, we analyzed that the variations in PL and resistivity were due to the formation of vacancies upon focused E-beam irradiation.

KW - Electron irradiation

KW - Focused electron beam

KW - Nanowire

KW - Photoluminescence

KW - ZnO

UR - https://www.scopus.com/pages/publications/84904313738

U2 - 10.1016/j.cap.2014.06.025

DO - 10.1016/j.cap.2014.06.025

M3 - Article

AN - SCOPUS:84904313738

SN - 1567-1739

VL - 14

SP - 1228

EP - 1233

JO - Current Applied Physics

JF - Current Applied Physics

IS - 9

ER -

Fine luminescent patterning on ZnO nanowires and films using focused electron-beam irradiation

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Keywords

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