Field emission characteristics of diamond films grown on glass substrates

S. W. Lee; I. T. Han; N. Lee; W. B. Choi; J. M. Kim; D. Jeon

Field emission characteristics of diamond films grown on glass substrates

S. W. Lee
, I. T. Han
, N. Lee
, W. B. Choi
, J. M. Kim
, D. Jeon

Samsung

Research output: Contribution to conference › Paper › peer-review

Abstract

Using microwave plasma-enhanced chemical vapor deposition, diamond films were grown on Ti-coated glass substrates at low temperatures around 500 °C on behalf of the practical application for field emitters. Electron emission was observed at a turn-on field as low as 11 V/μm. Field emission characteristics were discussed in terms of crystalline qualities, surface morphologies, and electrical properties of diamond films.

Original language	English
Pages	218-219
Number of pages	2
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA Duration: 19 Jul 1998 → 24 Jul 1998

Conference

Conference	Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC
City	Asheville, NC, USA
Period	19/07/98 → 24/07/98

Cite this

@conference{2a6015c231694e89a275126afb793b40,

title = "Field emission characteristics of diamond films grown on glass substrates",

abstract = "Using microwave plasma-enhanced chemical vapor deposition, diamond films were grown on Ti-coated glass substrates at low temperatures around 500 °C on behalf of the practical application for field emitters. Electron emission was observed at a turn-on field as low as 11 V/μm. Field emission characteristics were discussed in terms of crystalline qualities, surface morphologies, and electrical properties of diamond films.",

author = "Lee, \{S. W.\} and Han, \{I. T.\} and N. Lee and Choi, \{W. B.\} and Kim, \{J. M.\} and D. Jeon",

year = "1998",

language = "English",

pages = "218--219",

note = "Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC ; Conference date: 19-07-1998 Through 24-07-1998",

}

TY - CONF

T1 - Field emission characteristics of diamond films grown on glass substrates

AU - Lee, S. W.

AU - Han, I. T.

AU - Lee, N.

AU - Choi, W. B.

AU - Kim, J. M.

AU - Jeon, D.

PY - 1998

Y1 - 1998

N2 - Using microwave plasma-enhanced chemical vapor deposition, diamond films were grown on Ti-coated glass substrates at low temperatures around 500 °C on behalf of the practical application for field emitters. Electron emission was observed at a turn-on field as low as 11 V/μm. Field emission characteristics were discussed in terms of crystalline qualities, surface morphologies, and electrical properties of diamond films.

AB - Using microwave plasma-enhanced chemical vapor deposition, diamond films were grown on Ti-coated glass substrates at low temperatures around 500 °C on behalf of the practical application for field emitters. Electron emission was observed at a turn-on field as low as 11 V/μm. Field emission characteristics were discussed in terms of crystalline qualities, surface morphologies, and electrical properties of diamond films.

UR - https://www.scopus.com/pages/publications/0032308822

M3 - Paper

AN - SCOPUS:0032308822

SP - 218

EP - 219

T2 - Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC

Y2 - 19 July 1998 through 24 July 1998

ER -

Field emission characteristics of diamond films grown on glass substrates

Abstract

Conference

Other files and links

Fingerprint

Cite this