Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD

Sehyeon Kim; Kumar Mallem; Sooyoung Park; Sanchari Chowdary; Seyoun Kim; Jinsu Park; Jamein Kim; Minkyu Ju; Youngkuk Kim; Eun Chel Cho; Young Hyun Cho; Junsin Yi

doi:10.23919/AM-FPD.2019.8830592

Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD

Sehyeon Kim
, Kumar Mallem
, Sooyoung Park
, Sanchari Chowdary
, Seyoun Kim
, Jinsu Park
, Jamein Kim
, Minkyu Ju
, Youngkuk Kim
, Eun Chel Cho
, Young Hyun Cho
, Junsin Yi

Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

An ultra thin surface passivation layer is essential to reduce the surface recombination and enhance the open circuit voltage for high efficiency crystalline silicon (c-Si) solar cells. In that, we developed charge injection controllable thin films of SiO_X and SiN_X layers by PECVD for surface passivation of boron emitter c-Si surface. The refractive index of the SiO_X/SiN_X stack was optimized by varying the SiH₄, NH₃ and N₂O gas ratios. Lower D_it of 5 × 10¹⁰ cm^-² eV^-¹ and high Q_eff of -1.71 × 10¹¹ cm^-² was obtained for 10 nm thick SiO_X layer. The fabricated n-Si bifacial cell with insertion of 10 nm thick SiO_X layer archived efficiency (η) of 19.48 % with fill factor (FF) of 77.5 %, whereas the cell without SiO_X layer showed an η of 18.20 % with FF of 75.77.

Original language	English
Title of host publication	AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784990875374
DOIs	https://doi.org/10.23919/AM-FPD.2019.8830592
State	Published - Jul 2019
Externally published	Yes
Event	26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019 - Kyoto, Japan Duration: 2 Jul 2019 → 5 Jul 2019

Publication series

Name	AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Conference

Conference	26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019
Country/Territory	Japan
City	Kyoto
Period	2/07/19 → 5/07/19

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.23919/AM-FPD.2019.8830592

Cite this

Kim, S., Mallem, K., Park, S., Chowdary, S., Kim, S., Park, J., Kim, J., Ju, M., Kim, Y., Cho, E. C., Cho, Y. H., & Yi, J. (2019). Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD. In AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings Article 8830592 (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/AM-FPD.2019.8830592

Kim, Sehyeon ; Mallem, Kumar ; Park, Sooyoung et al. / Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD. AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

@inproceedings{9cae184bd8144b3a947f35c20421ab18,

title = "Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD",

abstract = "An ultra thin surface passivation layer is essential to reduce the surface recombination and enhance the open circuit voltage for high efficiency crystalline silicon (c-Si) solar cells. In that, we developed charge injection controllable thin films of SiOX and SiNX layers by PECVD for surface passivation of boron emitter c-Si surface. The refractive index of the SiOX/SiNX stack was optimized by varying the SiH4, NH3 and N2O gas ratios. Lower Dit of 5 × 1010 cm-2 eV-1 and high Qeff of -1.71 × 1011 cm-2 was obtained for 10 nm thick SiOX layer. The fabricated n-Si bifacial cell with insertion of 10 nm thick SiOX layer archived efficiency (η) of 19.48 \% with fill factor (FF) of 77.5 \%, whereas the cell without SiOX layer showed an η of 18.20 \% with FF of 75.77.",

author = "Sehyeon Kim and Kumar Mallem and Sooyoung Park and Sanchari Chowdary and Seyoun Kim and Jinsu Park and Jamein Kim and Minkyu Ju and Youngkuk Kim and Cho, \{Eun Chel\} and Cho, \{Young Hyun\} and Junsin Yi",

note = "Publisher Copyright: {\textcopyright} 2019 FTFMD.; 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019 ; Conference date: 02-07-2019 Through 05-07-2019",

year = "2019",

month = jul,

doi = "10.23919/AM-FPD.2019.8830592",

language = "English",

series = "AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices",

}

Kim, S, Mallem, K, Park, S, Chowdary, S, Kim, S, Park, J, Kim, J, Ju, M, Kim, Y, Cho, EC, Cho, YH & Yi, J 2019, Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD. in AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings., 8830592, AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, Institute of Electrical and Electronics Engineers Inc., 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019, Kyoto, Japan, 2/07/19. https://doi.org/10.23919/AM-FPD.2019.8830592

Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD. / Kim, Sehyeon; Mallem, Kumar; Park, Sooyoung et al.
AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8830592 (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD

AU - Kim, Sehyeon

AU - Mallem, Kumar

AU - Park, Sooyoung

AU - Chowdary, Sanchari

AU - Kim, Seyoun

AU - Park, Jinsu

AU - Kim, Jamein

AU - Ju, Minkyu

AU - Kim, Youngkuk

AU - Cho, Eun Chel

AU - Cho, Young Hyun

AU - Yi, Junsin

PY - 2019/7

Y1 - 2019/7

N2 - An ultra thin surface passivation layer is essential to reduce the surface recombination and enhance the open circuit voltage for high efficiency crystalline silicon (c-Si) solar cells. In that, we developed charge injection controllable thin films of SiOX and SiNX layers by PECVD for surface passivation of boron emitter c-Si surface. The refractive index of the SiOX/SiNX stack was optimized by varying the SiH4, NH3 and N2O gas ratios. Lower Dit of 5 × 1010 cm-2 eV-1 and high Qeff of -1.71 × 1011 cm-2 was obtained for 10 nm thick SiOX layer. The fabricated n-Si bifacial cell with insertion of 10 nm thick SiOX layer archived efficiency (η) of 19.48 % with fill factor (FF) of 77.5 %, whereas the cell without SiOX layer showed an η of 18.20 % with FF of 75.77.

AB - An ultra thin surface passivation layer is essential to reduce the surface recombination and enhance the open circuit voltage for high efficiency crystalline silicon (c-Si) solar cells. In that, we developed charge injection controllable thin films of SiOX and SiNX layers by PECVD for surface passivation of boron emitter c-Si surface. The refractive index of the SiOX/SiNX stack was optimized by varying the SiH4, NH3 and N2O gas ratios. Lower Dit of 5 × 1010 cm-2 eV-1 and high Qeff of -1.71 × 1011 cm-2 was obtained for 10 nm thick SiOX layer. The fabricated n-Si bifacial cell with insertion of 10 nm thick SiOX layer archived efficiency (η) of 19.48 % with fill factor (FF) of 77.5 %, whereas the cell without SiOX layer showed an η of 18.20 % with FF of 75.77.

UR - https://www.scopus.com/pages/publications/85073243077

U2 - 10.23919/AM-FPD.2019.8830592

DO - 10.23919/AM-FPD.2019.8830592

M3 - Conference contribution

AN - SCOPUS:85073243077

T3 - AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

BT - AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019

Y2 - 2 July 2019 through 5 July 2019

ER -

Kim S, Mallem K, Park S, Chowdary S, Kim S, Park J et al. Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD. In AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8830592. (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). doi: 10.23919/AM-FPD.2019.8830592

Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD

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