Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD

Sehyeon Kim; Kumar Mallem; Sooyoung Park; Sanchari Chowdary; Seyoun Kim; Jinsu Park; Jamein Kim; Minkyu Ju; Youngkuk Kim; Eun Chel Cho; Young Hyun Cho; Junsin Yi

doi:10.23919/AM-FPD.2019.8830592

Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD

Sehyeon Kim, Kumar Mallem, Sooyoung Park, Sanchari Chowdary, Seyoun Kim, Jinsu Park, Jamein Kim, Minkyu Ju, Youngkuk Kim, Eun Chel Cho, Young Hyun Cho, Junsin Yi

Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

An ultra thin surface passivation layer is essential to reduce the surface recombination and enhance the open circuit voltage for high efficiency crystalline silicon (c-Si) solar cells. In that, we developed charge injection controllable thin films of SiO_X and SiN_X layers by PECVD for surface passivation of boron emitter c-Si surface. The refractive index of the SiO_X/SiN_X stack was optimized by varying the SiH₄, NH₃ and N₂O gas ratios. Lower D_it of 5 × 10¹⁰ cm^-² eV^-¹ and high Q_eff of -1.71 × 10¹¹ cm^-² was obtained for 10 nm thick SiO_X layer. The fabricated n-Si bifacial cell with insertion of 10 nm thick SiO_X layer archived efficiency (η) of 19.48 % with fill factor (FF) of 77.5 %, whereas the cell without SiO_X layer showed an η of 18.20 % with FF of 75.77.

Original language	English
Title of host publication	AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784990875374
DOIs	https://doi.org/10.23919/AM-FPD.2019.8830592
State	Published - Jul 2019
Externally published	Yes
Event	26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019 - Kyoto, Japan Duration: 2 Jul 2019 → 5 Jul 2019

Publication series

Name	AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Conference

Conference	26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019
Country/Territory	Japan
City	Kyoto
Period	2/07/19 → 5/07/19

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.23919/AM-FPD.2019.8830592

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Kim, S., Mallem, K., Park, S., Chowdary, S., Kim, S., Park, J., Kim, J., Ju, M., Kim, Y., Cho, E. C., Cho, Y. H., & Yi, J. (2019). Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD. In AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings Article 8830592 (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/AM-FPD.2019.8830592

Kim, Sehyeon ; Mallem, Kumar ; Park, Sooyoung et al. / Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD. AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

@inproceedings{9cae184bd8144b3a947f35c20421ab18,

title = "Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD",

abstract = "An ultra thin surface passivation layer is essential to reduce the surface recombination and enhance the open circuit voltage for high efficiency crystalline silicon (c-Si) solar cells. In that, we developed charge injection controllable thin films of SiOX and SiNX layers by PECVD for surface passivation of boron emitter c-Si surface. The refractive index of the SiOX/SiNX stack was optimized by varying the SiH4, NH3 and N2O gas ratios. Lower Dit of 5 × 1010 cm-2 eV-1 and high Qeff of -1.71 × 1011 cm-2 was obtained for 10 nm thick SiOX layer. The fabricated n-Si bifacial cell with insertion of 10 nm thick SiOX layer archived efficiency (η) of 19.48 \% with fill factor (FF) of 77.5 \%, whereas the cell without SiOX layer showed an η of 18.20 \% with FF of 75.77.",

author = "Sehyeon Kim and Kumar Mallem and Sooyoung Park and Sanchari Chowdary and Seyoun Kim and Jinsu Park and Jamein Kim and Minkyu Ju and Youngkuk Kim and Cho, \{Eun Chel\} and Cho, \{Young Hyun\} and Junsin Yi",

note = "Publisher Copyright: {\textcopyright} 2019 FTFMD.; 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019 ; Conference date: 02-07-2019 Through 05-07-2019",

year = "2019",

month = jul,

doi = "10.23919/AM-FPD.2019.8830592",

language = "English",

series = "AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices",

}

Kim, S, Mallem, K, Park, S, Chowdary, S, Kim, S, Park, J, Kim, J, Ju, M, Kim, Y, Cho, EC, Cho, YH & Yi, J 2019, Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD. in AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings., 8830592, AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, Institute of Electrical and Electronics Engineers Inc., 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019, Kyoto, Japan, 2/07/19. https://doi.org/10.23919/AM-FPD.2019.8830592

Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD. / Kim, Sehyeon; Mallem, Kumar; Park, Sooyoung et al.
AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8830592 (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD

AU - Kim, Sehyeon

AU - Mallem, Kumar

AU - Park, Sooyoung

AU - Chowdary, Sanchari

AU - Kim, Seyoun

AU - Park, Jinsu

AU - Kim, Jamein

AU - Ju, Minkyu

AU - Kim, Youngkuk

AU - Cho, Eun Chel

AU - Cho, Young Hyun

AU - Yi, Junsin

PY - 2019/7

Y1 - 2019/7

N2 - An ultra thin surface passivation layer is essential to reduce the surface recombination and enhance the open circuit voltage for high efficiency crystalline silicon (c-Si) solar cells. In that, we developed charge injection controllable thin films of SiOX and SiNX layers by PECVD for surface passivation of boron emitter c-Si surface. The refractive index of the SiOX/SiNX stack was optimized by varying the SiH4, NH3 and N2O gas ratios. Lower Dit of 5 × 1010 cm-2 eV-1 and high Qeff of -1.71 × 1011 cm-2 was obtained for 10 nm thick SiOX layer. The fabricated n-Si bifacial cell with insertion of 10 nm thick SiOX layer archived efficiency (η) of 19.48 % with fill factor (FF) of 77.5 %, whereas the cell without SiOX layer showed an η of 18.20 % with FF of 75.77.

AB - An ultra thin surface passivation layer is essential to reduce the surface recombination and enhance the open circuit voltage for high efficiency crystalline silicon (c-Si) solar cells. In that, we developed charge injection controllable thin films of SiOX and SiNX layers by PECVD for surface passivation of boron emitter c-Si surface. The refractive index of the SiOX/SiNX stack was optimized by varying the SiH4, NH3 and N2O gas ratios. Lower Dit of 5 × 1010 cm-2 eV-1 and high Qeff of -1.71 × 1011 cm-2 was obtained for 10 nm thick SiOX layer. The fabricated n-Si bifacial cell with insertion of 10 nm thick SiOX layer archived efficiency (η) of 19.48 % with fill factor (FF) of 77.5 %, whereas the cell without SiOX layer showed an η of 18.20 % with FF of 75.77.

UR - https://www.scopus.com/pages/publications/85073243077

U2 - 10.23919/AM-FPD.2019.8830592

DO - 10.23919/AM-FPD.2019.8830592

M3 - Conference contribution

AN - SCOPUS:85073243077

T3 - AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

BT - AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019

Y2 - 2 July 2019 through 5 July 2019

ER -

Kim S, Mallem K, Park S, Chowdary S, Kim S, Park J et al. Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD. In AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8830592. (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). doi: 10.23919/AM-FPD.2019.8830592

Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD

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