@inproceedings{adf3e1d4da824abbace9279377e8a41f,
title = "Field effect diode for effective CDM ESD protection in 45 nm SOI technology",
abstract = "In this paper, the improved field-effect diode (FED) has been characterized and modeled in 45 nm silicon-on-insulator (SOI) technology. It has been experimentally shown to be suitable for pad-based local clamping under normal supply voltage (Vdd) range (below 1 V) in high-speed integrated circuits. ESD protection capabilities are investigated using very fast transmission line pulse (VF-TLP) tests to predict the device's performance in charged device model (CDM) ESD events. The FED's advantages in improving transient turn-on behavior and reducing DC leakage current have been analyzed and compared with other Silicon-Controlled-Rectifier (SCR)-based SOI device variations. Technology CAD (TCAD) simulations are used to interpret the turn-on behavior and the physical effects. Process tradeoffs have been evaluated. The work prepares the device for being directly applied to high-speed Input/Output (I/O) circuit and it addresses the severe challenge in CDM ESD protection. The improved device enables the adoption of local clamping scheme that expands the ESD design window.",
keywords = "Charged device model (CDM), Electrostatic discharge (ESD), Field-effect diode (FED), Local clamping, Semiconductor reliability, Silicon-controlled rectifier (SCR), Silicon-on-Insulator (SOI), Transient effect",
author = "Shuqing Cao and Beebe, \{Stephen G.\} and Salman, \{Akram A.\} and Pelella, \{Mario M.\} and Chun, \{Jung Hoon\} and Dutton, \{Robert W.\}",
year = "2009",
doi = "10.1109/IRPS.2009.5173316",
language = "English",
isbn = "0780388038",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "594--601",
booktitle = "2009 IEEE International Reliability Physics Symposium, IRPS 2009",
note = "2009 IEEE International Reliability Physics Symposium, IRPS 2009 ; Conference date: 26-04-2009 Through 30-04-2009",
}