Ferroelectric properties of Bi3.25Nd0.75Ti 3O12 thin films prepared by MOD process

Kibeom Kim; Guneik Jang; Changhoon Kim; Daeho Yoon

doi:10.1007/s10832-004-5079-x

Ferroelectric properties of Bi_3.25Nd_0.75Ti ₃O₁₂ thin films prepared by MOD process

Kibeom Kim, Guneik Jang, Changhoon Kim, Daeho Yoon

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Ferroelectric Bi_{4 - x} Nd _x Ti₃O ₁₂(BNdT) thin films with the composition (x = 0.75) were prepared on Pt/Ti/SiO₂/Si(100) substrate by metal-organic deposition. The films were annealed by various temperatures from 550 to 650°C and then the electrical and structural characteristics were investigated for the application of FRAM. Electrical properties such as dielectric constant, 2Pr and capacitance were quite dependent on the thermal heat treatment. The measured 2Pr value on the BNdT capacitor annealed at 650°C was 56 μ C/cm² at an applied voltage of 5 V. No fatigue was observed up to 8 × 10¹⁰ read/write switching cycles at a frequency of 1 MHz regardless of annealing temperatures.

Original language	English
Pages (from-to)	77-81
Number of pages	5
Journal	Journal of Electroceramics
Volume	13
Issue number	1-3
DOIs	https://doi.org/10.1007/s10832-004-5079-x
State	Published - Jul 2004

Keywords

Bi Nd TiO thin films
Dielectric constant
Fatigue
Ferroelectric
MOD method

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10.1007/s10832-004-5079-x

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title = "Ferroelectric properties of Bi3.25Nd0.75Ti 3O12 thin films prepared by MOD process",

abstract = "Ferroelectric Bi4 - x Nd x Ti3O 12(BNdT) thin films with the composition (x = 0.75) were prepared on Pt/Ti/SiO2/Si(100) substrate by metal-organic deposition. The films were annealed by various temperatures from 550 to 650°C and then the electrical and structural characteristics were investigated for the application of FRAM. Electrical properties such as dielectric constant, 2Pr and capacitance were quite dependent on the thermal heat treatment. The measured 2Pr value on the BNdT capacitor annealed at 650°C was 56 μ C/cm2 at an applied voltage of 5 V. No fatigue was observed up to 8 × 1010 read/write switching cycles at a frequency of 1 MHz regardless of annealing temperatures.",

keywords = "Bi Nd TiO thin films, Dielectric constant, Fatigue, Ferroelectric, MOD method",

author = "Kibeom Kim and Guneik Jang and Changhoon Kim and Daeho Yoon",

year = "2004",

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doi = "10.1007/s10832-004-5079-x",

language = "English",

volume = "13",

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TY - JOUR

T1 - Ferroelectric properties of Bi3.25Nd0.75Ti 3O12 thin films prepared by MOD process

AU - Kim, Kibeom

AU - Jang, Guneik

AU - Kim, Changhoon

AU - Yoon, Daeho

PY - 2004/7

Y1 - 2004/7

N2 - Ferroelectric Bi4 - x Nd x Ti3O 12(BNdT) thin films with the composition (x = 0.75) were prepared on Pt/Ti/SiO2/Si(100) substrate by metal-organic deposition. The films were annealed by various temperatures from 550 to 650°C and then the electrical and structural characteristics were investigated for the application of FRAM. Electrical properties such as dielectric constant, 2Pr and capacitance were quite dependent on the thermal heat treatment. The measured 2Pr value on the BNdT capacitor annealed at 650°C was 56 μ C/cm2 at an applied voltage of 5 V. No fatigue was observed up to 8 × 1010 read/write switching cycles at a frequency of 1 MHz regardless of annealing temperatures.

AB - Ferroelectric Bi4 - x Nd x Ti3O 12(BNdT) thin films with the composition (x = 0.75) were prepared on Pt/Ti/SiO2/Si(100) substrate by metal-organic deposition. The films were annealed by various temperatures from 550 to 650°C and then the electrical and structural characteristics were investigated for the application of FRAM. Electrical properties such as dielectric constant, 2Pr and capacitance were quite dependent on the thermal heat treatment. The measured 2Pr value on the BNdT capacitor annealed at 650°C was 56 μ C/cm2 at an applied voltage of 5 V. No fatigue was observed up to 8 × 1010 read/write switching cycles at a frequency of 1 MHz regardless of annealing temperatures.

KW - Bi Nd TiO thin films

KW - Dielectric constant

KW - Fatigue

KW - Ferroelectric

KW - MOD method

UR - https://www.scopus.com/pages/publications/17044422157

U2 - 10.1007/s10832-004-5079-x

DO - 10.1007/s10832-004-5079-x

M3 - Article

AN - SCOPUS:17044422157

SN - 1385-3449

VL - 13

SP - 77

EP - 81

JO - Journal of Electroceramics

JF - Journal of Electroceramics

IS - 1-3

ER -

Ferroelectric properties of Bi_3.25Nd_0.75Ti ₃O₁₂ thin films prepared by MOD process

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