Ferroelectric field effect in (La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 heterostructures

Sun Woong Kim; Jaichan Lee

doi:10.1080/10584589708221717

Ferroelectric field effect in (La,Sr)CoO₃/Pb(Zr,Ti)O₃/(La,Sr)CoO₃ heterostructures

Sun Woong Kim, Jaichan Lee

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Epitaxial LaCoO₃/Pb(Zr,Ti)O₃/(La,Sr)CoO₃ (LSCO) heterostructures have been grown on LaAlO₃ by pulsed laser deposition for investigating ferroelectric field effect. In the heterostructure, semiconducting LaCoO₃ was used as a conducting channel layer, instead Si. The resistivity of the LaCoO₃ (LCO) channel layer was found to be dependent on an oxygen ambient, primarily the ambient oxygen pressure during deposition. The resistivity of the LCO layer varied in the range of 0.1 - 100 Ω cm. Ferroelectric field effect induced in LaCoO₃ layer was observed by measuring the resistance modulation of the LCO layer with respect to the polarized state of the PZT layer. The resistance modulation of 9 % was obtained in the 680 Å thick LCO layer. Further the resistance modulation was improved up to 45 % after applying dc bias. It is suggested that the LCO/PZT/LSCO heterostructure can be used as a ferroelectric field effect transistor.

Original language	English
Pages (from-to)	405-414
Number of pages	10
Journal	Integrated Ferroelectrics
Volume	18
Issue number	1-4
DOIs	https://doi.org/10.1080/10584589708221717
State	Published - 1997

Keywords

Ferroelectric field effect
LCO channel layer
PZT

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10.1080/10584589708221717

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@article{10f0a0a08da9490bb4dc7b24b5483cca,

title = "Ferroelectric field effect in (La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 heterostructures",

abstract = "Epitaxial LaCoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 (LSCO) heterostructures have been grown on LaAlO3 by pulsed laser deposition for investigating ferroelectric field effect. In the heterostructure, semiconducting LaCoO3 was used as a conducting channel layer, instead Si. The resistivity of the LaCoO3 (LCO) channel layer was found to be dependent on an oxygen ambient, primarily the ambient oxygen pressure during deposition. The resistivity of the LCO layer varied in the range of 0.1 - 100 Ω cm. Ferroelectric field effect induced in LaCoO3 layer was observed by measuring the resistance modulation of the LCO layer with respect to the polarized state of the PZT layer. The resistance modulation of 9 \% was obtained in the 680 {\AA} thick LCO layer. Further the resistance modulation was improved up to 45 \% after applying dc bias. It is suggested that the LCO/PZT/LSCO heterostructure can be used as a ferroelectric field effect transistor.",

keywords = "Ferroelectric field effect, LCO channel layer, PZT",

author = "Kim, \{Sun Woong\} and Jaichan Lee",

year = "1997",

doi = "10.1080/10584589708221717",

language = "English",

volume = "18",

pages = "405--414",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1-4",

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TY - JOUR

T1 - Ferroelectric field effect in (La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 heterostructures

AU - Kim, Sun Woong

AU - Lee, Jaichan

PY - 1997

Y1 - 1997

N2 - Epitaxial LaCoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 (LSCO) heterostructures have been grown on LaAlO3 by pulsed laser deposition for investigating ferroelectric field effect. In the heterostructure, semiconducting LaCoO3 was used as a conducting channel layer, instead Si. The resistivity of the LaCoO3 (LCO) channel layer was found to be dependent on an oxygen ambient, primarily the ambient oxygen pressure during deposition. The resistivity of the LCO layer varied in the range of 0.1 - 100 Ω cm. Ferroelectric field effect induced in LaCoO3 layer was observed by measuring the resistance modulation of the LCO layer with respect to the polarized state of the PZT layer. The resistance modulation of 9 % was obtained in the 680 Å thick LCO layer. Further the resistance modulation was improved up to 45 % after applying dc bias. It is suggested that the LCO/PZT/LSCO heterostructure can be used as a ferroelectric field effect transistor.

AB - Epitaxial LaCoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 (LSCO) heterostructures have been grown on LaAlO3 by pulsed laser deposition for investigating ferroelectric field effect. In the heterostructure, semiconducting LaCoO3 was used as a conducting channel layer, instead Si. The resistivity of the LaCoO3 (LCO) channel layer was found to be dependent on an oxygen ambient, primarily the ambient oxygen pressure during deposition. The resistivity of the LCO layer varied in the range of 0.1 - 100 Ω cm. Ferroelectric field effect induced in LaCoO3 layer was observed by measuring the resistance modulation of the LCO layer with respect to the polarized state of the PZT layer. The resistance modulation of 9 % was obtained in the 680 Å thick LCO layer. Further the resistance modulation was improved up to 45 % after applying dc bias. It is suggested that the LCO/PZT/LSCO heterostructure can be used as a ferroelectric field effect transistor.

KW - Ferroelectric field effect

KW - LCO channel layer

KW - PZT

UR - https://www.scopus.com/pages/publications/0031357216

U2 - 10.1080/10584589708221717

DO - 10.1080/10584589708221717

M3 - Article

AN - SCOPUS:0031357216

SN - 1058-4587

VL - 18

SP - 405

EP - 414

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

ER -

Ferroelectric field effect in (La,Sr)CoO₃/Pb(Zr,Ti)O₃/(La,Sr)CoO₃ heterostructures

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Keywords

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