Ferroelectric and piezoelectric behavior of (111)-oriented Pb(Zr xTi1-x)O3 thin films on cobalt ferrite nano-seed layered Pt(111)/Si substrate

M. Khodaei; Daehee Seol; S. A. Seyyed Ebrahimi; Yong Jun Park; Hosung Seo; Yunseok Kim; Sunggi Baik

doi:10.1007/s10854-014-1785-6

Ferroelectric and piezoelectric behavior of (111)-oriented Pb(Zr _xTi_1-x)O₃ thin films on cobalt ferrite nano-seed layered Pt(111)/Si substrate

M. Khodaei, Daehee Seol, S. A. Seyyed Ebrahimi, Yong Jun Park, Hosung Seo, Yunseok Kim, Sunggi Baik

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Perfect (111)-oriented Pb(Zr_xTi_1-x)O₃ (PZT) thin films were grown on cobalt ferrite buffered Pt(111)/Ti/SiO ₂/Si substrate by pulsed laser deposition method using various targets with different Zr/Ti ratios ranging from 30/70 to 70/30. The results of X-ray diffraction analyses indicated that the composition of morphotropic phase boundary in the present PZT films is same as the bulk PZT (Zr/Ti = 52/48). The effect of Zr/Ti ratio of the PZT films was investigated by the ferroelectric domain structure and the piezoelectric characteristics of the films by piezoresponse force microscopy, as well as polarization measurement. The results revealed that the present tetragonal PZT film has a higher ferroelectric domain switching than rhombohedral one and the film with composition of Zr/Ti = 52/48 showed relatively high value of squareness of P-E loop and E_c as well as high piezoresponse.

Original language	English
Pages (from-to)	1696-1702
Number of pages	7
Journal	Journal of Materials Science: Materials in Electronics
Volume	25
Issue number	4
DOIs	https://doi.org/10.1007/s10854-014-1785-6
State	Published - Apr 2014

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title = "Ferroelectric and piezoelectric behavior of (111)-oriented Pb(Zr xTi1-x)O3 thin films on cobalt ferrite nano-seed layered Pt(111)/Si substrate",

abstract = "Perfect (111)-oriented Pb(ZrxTi1-x)O3 (PZT) thin films were grown on cobalt ferrite buffered Pt(111)/Ti/SiO 2/Si substrate by pulsed laser deposition method using various targets with different Zr/Ti ratios ranging from 30/70 to 70/30. The results of X-ray diffraction analyses indicated that the composition of morphotropic phase boundary in the present PZT films is same as the bulk PZT (Zr/Ti = 52/48). The effect of Zr/Ti ratio of the PZT films was investigated by the ferroelectric domain structure and the piezoelectric characteristics of the films by piezoresponse force microscopy, as well as polarization measurement. The results revealed that the present tetragonal PZT film has a higher ferroelectric domain switching than rhombohedral one and the film with composition of Zr/Ti = 52/48 showed relatively high value of squareness of P-E loop and Ec as well as high piezoresponse.",

author = "M. Khodaei and Daehee Seol and \{Seyyed Ebrahimi\}, \{S. A.\} and Park, \{Yong Jun\} and Hosung Seo and Yunseok Kim and Sunggi Baik",

year = "2014",

month = apr,

doi = "10.1007/s10854-014-1785-6",

language = "English",

volume = "25",

pages = "1696--1702",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

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TY - JOUR

T1 - Ferroelectric and piezoelectric behavior of (111)-oriented Pb(Zr xTi1-x)O3 thin films on cobalt ferrite nano-seed layered Pt(111)/Si substrate

AU - Khodaei, M.

AU - Seol, Daehee

AU - Seyyed Ebrahimi, S. A.

AU - Park, Yong Jun

AU - Seo, Hosung

AU - Kim, Yunseok

AU - Baik, Sunggi

PY - 2014/4

Y1 - 2014/4

N2 - Perfect (111)-oriented Pb(ZrxTi1-x)O3 (PZT) thin films were grown on cobalt ferrite buffered Pt(111)/Ti/SiO 2/Si substrate by pulsed laser deposition method using various targets with different Zr/Ti ratios ranging from 30/70 to 70/30. The results of X-ray diffraction analyses indicated that the composition of morphotropic phase boundary in the present PZT films is same as the bulk PZT (Zr/Ti = 52/48). The effect of Zr/Ti ratio of the PZT films was investigated by the ferroelectric domain structure and the piezoelectric characteristics of the films by piezoresponse force microscopy, as well as polarization measurement. The results revealed that the present tetragonal PZT film has a higher ferroelectric domain switching than rhombohedral one and the film with composition of Zr/Ti = 52/48 showed relatively high value of squareness of P-E loop and Ec as well as high piezoresponse.

AB - Perfect (111)-oriented Pb(ZrxTi1-x)O3 (PZT) thin films were grown on cobalt ferrite buffered Pt(111)/Ti/SiO 2/Si substrate by pulsed laser deposition method using various targets with different Zr/Ti ratios ranging from 30/70 to 70/30. The results of X-ray diffraction analyses indicated that the composition of morphotropic phase boundary in the present PZT films is same as the bulk PZT (Zr/Ti = 52/48). The effect of Zr/Ti ratio of the PZT films was investigated by the ferroelectric domain structure and the piezoelectric characteristics of the films by piezoresponse force microscopy, as well as polarization measurement. The results revealed that the present tetragonal PZT film has a higher ferroelectric domain switching than rhombohedral one and the film with composition of Zr/Ti = 52/48 showed relatively high value of squareness of P-E loop and Ec as well as high piezoresponse.

UR - https://www.scopus.com/pages/publications/84897101015

U2 - 10.1007/s10854-014-1785-6

DO - 10.1007/s10854-014-1785-6

M3 - Article

AN - SCOPUS:84897101015

SN - 0957-4522

VL - 25

SP - 1696

EP - 1702

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 4

ER -

Ferroelectric and piezoelectric behavior of (111)-oriented Pb(Zr _xTi_1-x)O₃ thin films on cobalt ferrite nano-seed layered Pt(111)/Si substrate

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