Femtosecond laser annealing effects on indium oxide nanowire transistors

Seongmin Kim; Sunkook Kim; Chunghun Lee; Pornsak Srisungsitthisunti; Pochiang Chen; Chongwu Zhou; Xianfan Xu; Minghao Qi; Saeed Mohammadi; Sanghyun Ju; David B. Janes

doi:10.1109/ISDRS.2009.5378138

Femtosecond laser annealing effects on indium oxide nanowire transistors

Seongmin Kim
, Sunkook Kim
, Chunghun Lee
, Pornsak Srisungsitthisunti
, Pochiang Chen
, Chongwu Zhou
, Xianfan Xu
, Minghao Qi
, Saeed Mohammadi
, Sanghyun Ju
, David B. Janes

Purdue University
University of Southern California
Kyonggi University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378138
State	Published - 2009
Externally published	Yes
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: 9 Dec 2009 → 11 Dec 2009

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Conference

Conference	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country/Territory	United States
City	College Park, MD
Period	9/12/09 → 11/12/09

Access to Document

10.1109/ISDRS.2009.5378138

Cite this

Kim, S., Kim, S., Lee, C., Srisungsitthisunti, P., Chen, P., Zhou, C., Xu, X., Qi, M., Mohammadi, S., Ju, S., & Janes, D. B. (2009). Femtosecond laser annealing effects on indium oxide nanowire transistors. In 2009 International Semiconductor Device Research Symposium, ISDRS '09 Article 5378138 (2009 International Semiconductor Device Research Symposium, ISDRS '09). https://doi.org/10.1109/ISDRS.2009.5378138

@inproceedings{11b23650a0974052a93376221556f2a8,

title = "Femtosecond laser annealing effects on indium oxide nanowire transistors",

author = "Seongmin Kim and Sunkook Kim and Chunghun Lee and Pornsak Srisungsitthisunti and Pochiang Chen and Chongwu Zhou and Xianfan Xu and Minghao Qi and Saeed Mohammadi and Sanghyun Ju and Janes, \{David B.\}",

year = "2009",

doi = "10.1109/ISDRS.2009.5378138",

language = "English",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

Kim, S, Kim, S, Lee, C, Srisungsitthisunti, P, Chen, P, Zhou, C, Xu, X, Qi, M, Mohammadi, S, Ju, S & Janes, DB 2009, Femtosecond laser annealing effects on indium oxide nanowire transistors. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378138, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 9/12/09. https://doi.org/10.1109/ISDRS.2009.5378138

Femtosecond laser annealing effects on indium oxide nanowire transistors. / Kim, Seongmin; Kim, Sunkook; Lee, Chunghun et al.
2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378138 (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Femtosecond laser annealing effects on indium oxide nanowire transistors

AU - Kim, Seongmin

AU - Kim, Sunkook

AU - Lee, Chunghun

AU - Srisungsitthisunti, Pornsak

AU - Chen, Pochiang

AU - Zhou, Chongwu

AU - Xu, Xianfan

AU - Qi, Minghao

AU - Mohammadi, Saeed

AU - Ju, Sanghyun

AU - Janes, David B.

PY - 2009

Y1 - 2009

UR - https://www.scopus.com/pages/publications/77949403310

U2 - 10.1109/ISDRS.2009.5378138

DO - 10.1109/ISDRS.2009.5378138

M3 - Conference contribution

AN - SCOPUS:77949403310

SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

Y2 - 9 December 2009 through 11 December 2009

ER -

Femtosecond laser annealing effects on indium oxide nanowire transistors

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